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Philosophical Magazine B Volume 59, 1989 - Issue 3
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Original Articles

Growth of epitaxial silica on vicinal Si(001) surfaces during thermal oxidation in O2

F. Rochet Groupe de Physique des Solides de l'Ecole Normale Supérieure, Université Paris VII, Tour 23, 2 place Jussieu, 75251, Paris, Cedex 05, France
,
M. Froment Physique des Liquides et Electrochimie (LPIS du CNRS), Université Pierre et Marie Curie, Tour 22, 4 place Jussieu, 75252, Paris, Cedex 05, France
,
C. D'anterroches Centre National d'Etude des Télécommunications, Chemin du Vieux Chêne, 38243, Meylan, Cedex, France
,
H. Roulet Laboratoire de Chimie Physique (Laboratoire associé au CNRS 176), Université Pierre et Marie Curie, 11 rue Pierre et Marie Curie, 75231, Paris, Cedex 05, France
&
G. Dufour Laboratoire de Chimie Physique (Laboratoire associé au CNRS 176), Université Pierre et Marie Curie, 11 rue Pierre et Marie Curie, 75231, Paris, Cedex 05, France
Pages 339-363 | Received 12 Jul 1988, Accepted 22 Aug 1988, Published online: 20 Aug 2006

Citations (28)

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F.M. Ross & W.M. Stobbs. (1991) A study of the initial stages of the oxidation of silicon using the Fresnel method. Philosophical Magazine A 63:1, pages 1-36.
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Articles from other publishers (27)

Tomoya Ono, Christopher James Kirkham, Shoichiro Saito & Yoshifumi Oshima. (2017) Theoretical and experimental investigation of the atomic and electronic structures at the interface . Physical Review B 96:11.
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Shamil Shaikhutdinov & Hans-Joachim Freund. (2015) Ultra-thin silicate films on metals. Journal of Physics: Condensed Matter 27:44, pages 443001.
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Takayoshi Shimura, Daisuke Shimokawa, Tomoyuki Inoue, Takuji Hosoi, Heiji Watanabe, Osami Sakata & Masataka Umeno. (2010) Thermal Stability and Electron Irradiation Damage of Ordered Structure in the Thermal Oxide Layer on Si. Journal of The Electrochemical Society 157:10, pages H977.
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Tomoya Ono. (2009) First-principles study of leakage current through a interface . Physical Review B 79:19.
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Tomoya Ono, Yoshiyuki Egami, Katsuhiro Kutsuki, Heiji Watanabe & Kikuji Hirose. (2007) First-principles study of the electronic structures and dielectric properties of the Si/SiO 2 interface . Journal of Physics: Condensed Matter 19:36, pages 365202.
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Eun-Chel Cho, Martin A. Green, James Xia, Richard Corkish & Andrei Nikulin. (2004) Atomistic structure of SiO2∕Si∕SiO2 quantum wells with an apparently crystalline silicon oxide. Journal of Applied Physics 96:6, pages 3211-3216.
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K. Tatsumura, T. Watanabe, D. Yamasaki, T. Shimura, M. Umeno & I. Ohdomari. (2004) Residual order within thermally grown amorphous on crystalline silicon . Physical Review B 69:8.
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Atsushi Hiraiwa. 2003. digital Encyclopedia of Applied Physics. digital Encyclopedia of Applied Physics.
D. J. Bottomley, H. Omi, Y. Kobayashi, M. Uematsu, H. Kageshima & T. Ogino. (2002) Origin of self-assembled step and terrace formation at the interface . Physical Review B 66:3.
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Yuji TAKAKUWA. (2002) Oxidation Mechanism of Silicon Surface. Growth Kinetics of Very Thin Oxide Layers on Si(001) Surface Monitored in Real-time by Auger Electron Spectroscopy Combined with Reflection High Energy Electron Diffraction.. Hyomen Kagaku 23:9, pages 536-552.
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Takahiro Yamasaki, Chioko Kaneta, Toshihiro Uchiyama, Tsuyoshi Uda & Kiyoyuki Terakura. (2001) Geometric and electronic structures of interfaces . Physical Review B 63:11.
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F. M. Ross & J. M. Gibson. 2001. Fundamental Aspects of Silicon Oxidation. Fundamental Aspects of Silicon Oxidation 35 60 .
J. Harada, I. Takahashi, T. Shimura & M. Umeno. 1999. Advances in the Understanding of Crystal Growth Mechanisms. Advances in the Understanding of Crystal Growth Mechanisms 247 266 .
T. Shimura, Mr. H. Sensui & M. Umeno. (1998) Effects of the Substrate Crystals upon the Structure of Thermal Oxide Layers on Si. Crystal Research and Technology 33:4, pages 637-642.
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S. D. Kosowsky, P. S. Pershan, K. S. Krisch, J. Bevk, M. L. Green, D. Brasen, L. C. Feldman & P. K. Roy. (1997) Evidence of annealing effects on a high-density Si/SiO2 interfacial layer. Applied Physics Letters 70:23, pages 3119-3121.
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Frances M. Ross, J.Murray Gibson & Ray D. Twesten. (1994) Dynamic observations of interface motion during the oxidation of silicon. Surface Science 310:1-3, pages 243-266.
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G. Lüpke, D. J. Bottomley & H. M. van Driel. (1993) /Si interfacial structure on vicinal Si(100) studied with second-harmonic generation . Physical Review B 47:16, pages 10389-10394.
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A. Paneva & A. Szekeres. (1993) Ellipsometric approach for evaluation of optical parameters in thin multilayer structures. Surface and Interface Analysis 20:4, pages 290-294.
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Alain C. Diebold & Bruce Doris. (2004) A survey of non‐destructive surface characterization methods used to insure reliable gate oxide fabrication for silicon IC devices. Surface and Interface Analysis 20:2, pages 127-139.
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F. J. Himpsel, D. A. Lapiano-Smith, J. F. Morar & J. Bevk. 1993. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 237 245 .
F. Rochet, H. Roulet, G. Dufour, S. Carniato, C. Guillot, N. Barrett & M. Froment. (1992) Si(001) vicinal surface oxidation in O2: Angle-resolved Si 2p core-level study using synchroton radiation. Applied Surface Science 59:2, pages 117-134.
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J.R. Engstrom, D.J. Bonser & Thomas Engel. (1992) The reaction of atomic oxygen with Si(100) and Si(111). Surface Science 268:1-3, pages 238-264.
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T. A. Rabedeau, I. M. Tidswell, P. S. Pershan, J. Bevk & B. S. Freer. (1991) X-ray reflectivity studies of SiO2/Si(001). Applied Physics Letters 59:26, pages 3422-3424.
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T. A. Rabedeau, I. M. Tidswell, P. S. Pershan, J. Bevk & B. S. Freer. (1991) X-ray scattering studies of the SiO2/Si(001) interfacial structure. Applied Physics Letters 59:6, pages 706-708.
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G. Renaud, P. H. Fuoss, A. Ourmazd, J. Bevk, B. S. Freer & P. O. Hahn. (1991) Native oxidation of the Si(001) surface: Evidence for an interfacial phase. Applied Physics Letters 58:10, pages 1044-1046.
Crossref
L Kubler, F Lutz, J.L Bischoff & D Bolmont. (1990) Substrate temperature-induced changeover from homogeneous to step nucleated growth modes for the initial thermal oxidation of Si(001) by O2. Vacuum 41:4-6, pages 1124-1127.
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F. Lutz, L. Kubler, J. L. Bischoff & D. Bolmont. (1989) Photoemission proof for a island growth mode initiated on the steps of Si(001) during thermal oxidation by . Physical Review B 40:17, pages 11747-11750.
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