X-ray photoelectron spectroscopy study of band offsets in a-Si_0·2C_0·8:H/p-(a-Si:H) and a-Si_0·2C_0·8:H/n-(a-Si:H) heterojunctions

Masaaki Hirai Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama, 700, Japan

Masahiko Kusaka Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama, 700, Japan

Motohiro Iwami Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama, 700, Japan

Fumio Akao Department of Electronic Engineering, Faculty of Technology, Okayama University of Science, Okayama, 700, Japan

Masahiro Yoshimoto Department of Electronic Engineering, Faculty of Technology, Kyoto University, Kyoto, 606, Japan

Hiroyuki Matsunami Department of Electronic Engineering, Faculty of Technology, Kyoto University, Kyoto, 606, Japan

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Masahiro Yoshimoto, Takashi Fuyuki & Hiroyuki Matsunami. (1989) Carrier transport in a-Si:H/a-Si1−xCx:H ultra-thin multilayers. Philosophical Magazine B 60:1, pages 89-99.
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Articles from other publishers (3)

Lars Korte. 2012. Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells. Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells 161 221 .

L. Korte & M. Schmidt. (2011) Doping type and thickness dependence of band offsets at the amorphous/crystalline silicon heterojunction. Journal of Applied Physics 109:6.
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Masahiro Yoshimoto, Yoshiaki Yamamoto & Junji Saraie. (2003) Fabrication of InN/Si heterojunctions with rectifying characteristics. physica status solidi (c):7, pages 2794-2797.
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X-ray photoelectron spectroscopy study of band offsets in a-Si_0·2C_0·8:H/p-(a-Si:H) and a-Si_0·2C_0·8:H/n-(a-Si:H) heterojunctions

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X-ray photoelectron spectroscopy study of band offsets in a-Si0·2C0·8:H/p-(a-Si:H) and a-Si0·2C0·8:H/n-(a-Si:H) heterojunctions

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X-ray photoelectron spectroscopy study of band offsets in a-Si_0·2C_0·8:H/p-(a-Si:H) and a-Si_0·2C_0·8:H/n-(a-Si:H) heterojunctions