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Philosophical Magazine B Volume 61, 1990 - Issue 2
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Original Articles

Defect creation in the accumulation layer of a-Si: H thin-film transistors

N. Nickel Philipps-Universität Marburg, Fachbereich Physik und Wissenschaftliches Zentrum fur Materialwissenschaften, Renthof 5, D-3550, Marburg, F.R. Germany
,
W. Fuhs Philipps-Universität Marburg, Fachbereich Physik und Wissenschaftliches Zentrum fur Materialwissenschaften, Renthof 5, D-3550, Marburg, F.R. Germany
&
H. Mell Philipps-Universität Marburg, Fachbereich Physik und Wissenschaftliches Zentrum fur Materialwissenschaften, Renthof 5, D-3550, Marburg, F.R. Germany
Pages 251-261 | Received 20 Apr 1989, Accepted 09 Jun 1989, Published online: 20 Aug 2006

Citations (28)

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Read on this site (2)

L. Mariucci, G. Fortunato, C. Puglia, A. Pecora & S. Priori. (1992) Instability in hydrogenated amorphous silicon/amorphous silicon dioxide thin-film transistors: Evidence for a predominant effect of charge trapping into the gate insulator. Philosophical Magazine Letters 65:4, pages 177-182.
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Rosari Saleh, R. Schumacher & P. Thomas. (1990) The influence of spatially non-uniform density-of-state distributions on the characteristics of a-Si: H thin-film transistors. Philosophical Magazine B 61:2, pages 263-276.
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Articles from other publishers (26)

Hongyuan Xu, Guangmiao Wan, Jiaying Mai, Zhixiong Jiang, Bin Liu & Shengdong Zhang. (2023) Enhanced electrical stability of thin film transistors based on nanocrystalline silicon films. Semiconductor Science and Technology 38:3, pages 035006.
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Mingzhi Dai, Karim Khan, Shengnan Zhang, Kemin Jiang, Xingye Zhang, Weiliang Wang, Lingyan Liang, Hongtao Cao, Pengjun Wang, Peng Wang, Lijing Miao, Haiming Qin, Jun Jiang, Lixin Xue & Junhao Chu. (2016) A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy. Scientific Reports 6:1.
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M. B. Dutt & Vandna Mittal. (2005) Investigation of electrical transport properties of as-implanted silicon for making micromachined uncooled bolometric arrays. Journal of Applied Physics 97:8.
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Orhan Özdemir, İsmail Atılgan & Bayram Katırcıoğlu. (2001) Instability evolution within a-SiNx film assessed through MIS structure under bias and temperature stresses. Journal of Non-Crystalline Solids 296:1-2, pages 27-38.
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H. Gleskova & S. Wagner. (2011) Electrical Stability of a-Si:H TFTs Fabricated at 150°C. MRS Proceedings 664.
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H. Gleskova & S. Wagner. (2001) DC-gate-bias stressing of a-Si:H TFTs fabricated at 150°C on polyimide foil. IEEE Transactions on Electron Devices 48:8, pages 1667-1671.
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B. Stannowski, H. Meiling, A. M. Brockhoff & R. E. I. Schropp. (2011) Thin-Film Transistors based on Hot-Wire Amorphous Silicon on Silicon Nitride. MRS Proceedings 557.
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J. H. Kim, J. H. Choi, C. W. Kim & J. H. Souk. (2011) Photo and Thermal Stability of Chlorine Doped Amorphous Silicon TFTs. MRS Proceedings 471.
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G. Kawachi, M. Ishii & N. Konishi. (1996) Localized density of states in hydrogenated amorphous silicon/silicon nitride interfaces studied by transient voltage spectroscopy. Journal of Applied Physics 80:10, pages 5786-5790.
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Sung Ki Kim, Keun Soo Lee & Jin Jang. (1996) Creation of interface states between SiO2 and a-Si:H in a-Si:H thin film transistors by bias-stress. Journal of Non-Crystalline Solids 198-200, pages 428-431.
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Hyuk-Ryeol Park, Dong-Sun Oh, Jin Jang & Hoe-Sup Soh. (1996) Optical absorption spectra of a-Si : H films in TFT structure. Solid State Communications 97:1, pages 45-48.
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A. Nagy, M. Hundhausen, L. Ley, G. Brunst & E. Holzenkämpfer. (1995) Steady-state hopping conduction in the conduction-band tail of a -Si:H studied in thin-film transistors . Physical Review B 52:15, pages 11289-11295.
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C. F. O. Graeff, M. S. Brandt, M. Stutzmann & M. J. Powell. (1995) Defect creation in amorphous-silicon thin-film transistors. Physical Review B 52:7, pages 4680-4683.
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F. R. Libsch & J. Kanicki. (1993) Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors. Applied Physics Letters 62:11, pages 1286-1288.
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Gerhard Müller & Gerhard KrÖtz. (1993) Structural Equilibration in Pure and Hydrogenated Amorphous Silicon. MRS Proceedings 297.
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G. Fortunato, L. Mariucci, A. Pecora, M. Fanfoni & S. Priori. (1992) Study of the defects induced by low-energy (100 eV) hydrogen-ions on amorphous silicon dioxide. Applied Physics Letters 60:13, pages 1564-1566.
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N. H. Nickel, W. Fuhs, H. Mell & W. Beyer. (2011) Silicon-Nitride for Amorphous Silicon Thin-Film Transistors. MRS Proceedings 284.
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G. Fortunato & L. Mariucci. (2011) Instability in Amorphous Silicon Dioxide/Amorphous Silicon Structures. MRS Proceedings 284.
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G. Fortunato, L. Mariucci & C. Reita. (1991) Dispersive charge injection model for hydrogenated amorphous silicon/amorphous silicon dioxide thin-film transistor instability. Applied Physics Letters 59:7, pages 826-828.
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Richard S. Crandall. (1991) Defect relaxation in amorphous silicon: Stretched exponentials, the Meyer-Neldel rule, and the Staebler-Wronski effect. Physical Review B 43:5, pages 4057-4070.
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Rosari Saleh, Norbert Nickel, Walther Fuhs & Helmut Mell. (2011) Amorphous Silicon Thin—Film Transistors with Non—Uniform Distribution of Gap States. MRS Proceedings 219.
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Norbert Nickel, Rosari Saleh, Walther Fuhs & Helmut Mell. (2011) Amorphous Silicon Thin-Film Transistors Modified by Doping and Plasma Treatment of the Nitride. MRS Proceedings 219.
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A. Pecora, G. Fortunato, L. Mariucci & A. Bearzotti. (1991) Chemically sensitive hydrogenated amorphous silicon thin-film transistors. Journal of Non-Crystalline Solids 137-138, pages 1253-1256.
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N. Nickel, W. Fuhs & H. Mell. (1991) TCS study of n- and p-channel amorphous silicon thin-film transistors. Journal of Non-Crystalline Solids 137-138, pages 1221-1224.
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Shengwen Luan & Gerold W. Neudeck. (1990) Effect of NH3 plasma treatment of gate nitride on the performance of amorphous silicon thin-film transistors. Journal of Applied Physics 68:7, pages 3445-3450.
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W. B. Jackson & M. Hack. (2011) Effect of Bias on Recovery Rates of Stressed Amorphous Silicon Mis Structures. MRS Proceedings 192.
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