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Philosophical Magazine B Volume 61, 1990 - Issue 2
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Original Articles

The influence of spatially non-uniform density-of-state distributions on the characteristics of a-Si: H thin-film transistors

Rosari Saleh Philipps-Universität Marburg, Fachbereich Physik und Wissenschaftliches Zentrum fur Materialwissenschaften, Renthof 5, D-3550, Marburg, F.R. Germany
,
R. Schumacher Philipps-Universität Marburg, Fachbereich Physik und Wissenschaftliches Zentrum fur Materialwissenschaften, Renthof 5, D-3550, Marburg, F.R. Germany
&
P. Thomas Philipps-Universität Marburg, Fachbereich Physik und Wissenschaftliches Zentrum fur Materialwissenschaften, Renthof 5, D-3550, Marburg, F.R. Germany
Pages 263-276 | Received 20 Apr 1989, Accepted 26 May 1989, Published online: 20 Aug 2006

Citations (4)

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Read on this site (2)

M.J. Powell, S.C. Deane, I.D. French, J.R. Hughes & W.I. Milne. (1991) A defect-pool model for near-interface states in amorphous silicon thin-film transistors. Philosophical Magazine B 63:1, pages 325-336.
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N. Nickel, W. Fuhs & H. Mell. (1990) Defect creation in the accumulation layer of a-Si: H thin-film transistors. Philosophical Magazine B 61:2, pages 251-261.
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Articles from other publishers (2)

Rosari Saleh, Norbert Nickel, Walther Fuhs & Helmut Mell. (2011) Amorphous Silicon Thin—Film Transistors with Non—Uniform Distribution of Gap States. MRS Proceedings 219.
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Norbert Nickel, Rosari Saleh, Walther Fuhs & Helmut Mell. (2011) Amorphous Silicon Thin-Film Transistors Modified by Doping and Plasma Treatment of the Nitride. MRS Proceedings 219.
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