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Philosophical Magazine B Volume 61, 1990 - Issue 5
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Original Articles

Ab initio calculations on metastable defects in a-Si:H: The Staebler-Wronski effect

R. Jones Department of Physics, University of Exeter, Exeter, EX44QL, England
&
G. M.S. Lister Department of Physics, University of Exeter, Exeter, EX44QL, England
Pages 881-894 | Received 23 May 1989, Accepted 17 Jul 1989, Published online: 20 Aug 2006

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Kyozaburo Takeda & Kenji Shiraishi. (1992) First-principles calculations on adiabatic potential surfaces of hydrogen atoms in polysilane. Philosophical Magazine B 65:3, pages 535-552.
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Articles from other publishers (23)

. 2014. Light-Induced Defects in Semiconductors. Light-Induced Defects in Semiconductors 155 172 .
Charles W. Myles, Byeong C. Ha & Young K. Park. (2002) Large supercell molecular dynamics study of defect formation in hydrogenated amorphous silicon. Journal of Physics and Chemistry of Solids 63:9, pages 1691-1698.
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Hikaru Kobayashi, Yoshiko Kasama, Tetsushi Fujinaga, Masao Takahashi & Hideomi Koinuma. (2002) Chemical prevention of light-induced degradation in amorphous silicon films. Solid State Communications 123:3-4, pages 151-154.
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Hikaru Kobayashi, Naozumi Fujiwara, Tetsushi Fujinaga, Daisuke Niinobe, Osamu Maida & Masao Takahashi. (2011) Passivation of Defect States in Amorphous and Crystalline Si by use of Cyanide Treatment and Improvement of Solar Cell Characteristics. MRS Proceedings 715.
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Thomas Krüger & Alexander F. Sax. (2001) Microstructure of local defects in amorphous Si:H: A quantum chemical study. Physical Review B 64:19.
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Thomas Kr�ger & Alexander F. Sax. (2001) Distorted silicon hydrides? a comparative study with various density functionals. Journal of Computational Chemistry 22:2, pages 151-161.
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Peter Klein, Herbert M. Urbassek & Thomas Frauenheim. (1999) Tight-binding molecular-dynamics study of  Preparation, structure, and dynamics . Physical Review B 60:8, pages 5478-5484.
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Chris G. Van De Walle. 1999. 241 281 .
Zokirkhon M. Khakimov. (2011) New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon. MRS Proceedings 532.
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Zokirkhon M. Khakimov. (2011) New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon. MRS Proceedings 527.
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H. Kageshima & K. Shiraishi. (1997) Microscopic mechanism for SiO2/Si interface passivation: Si=O double bond formation. Surface Science 380:1, pages 61-65.
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Kazuo Morigaki, Harumi Hikita & Michio Kondo. (1995) Self-trapping of holes and related phenomena in a-Si:H. Journal of Non-Crystalline Solids 190:1-2, pages 38-47.
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Young K. Park & Charles W. Myles. (1995) Molecular-dynamics study of defect formation in a -Si:H . Physical Review B 51:3, pages 1671-1679.
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A. Yoshida, Y. Matsuda, K. Nakanose & H. Ogawa. (1994) Induced defects in a-Si:H and a-Ge:H calculated by molecular orbital theory. Induced defects in a-Si:H and a-Ge:H calculated by molecular orbital theory.
S.N. Taraskin, S.V. Ivliev & M.I. Klinger. (1993) Adiabatic potentials for weak-bond/dangling-bond conversion model in a-Si:H. Journal of Non-Crystalline Solids 152:2-3, pages 237-245.
Crossref
W. B. Jackson & C. C. Tsai. (1992) Hydrogen transport in amorphous silicon. Physical Review B 45:12, pages 6564-6580.
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I. Kwon, R. Biswas & C. M. Soukoulis. (1992) Molecular-dynamics simulations of defect formation in hydrogenated amorphous silicon. Physical Review B 45:7, pages 3332-3339.
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R. Biswas, I. Kwon & C. M. Soukoulis. (1991) Mechanism for the Staebler-Wronski effect in a -Si:H . Physical Review B 44:7, pages 3403-3406.
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M. Kondo, H. Yokomichi & K. Morigaki. (1991) Optically detected nuclear magnetic resonance in amorphous silicon related materials. Physica B: Condensed Matter 170:1-4, pages 227-230.
Crossref
R. Jones. (1991) Metastable states in Si:H. Physica B: Condensed Matter 170:1-4, pages 181-187.
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Sándor Kugler & Gábor Náray-Szabó. (1991) Weak bonds and atomic charge distribution in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids 137-138, pages 295-298.
Crossref
M. Kondo, H. Yokomichi & K. Morigaki. 1991. Hydrogen in Semiconductors. Hydrogen in Semiconductors 227 230 .
R. Jones. 1991. Hydrogen in Semiconductors. Hydrogen in Semiconductors 181 187 .

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