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Philosophical Magazine B Volume 62, 1990 - Issue 5
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Original Articles

Electron and hole transport in compensated amorphous silicon

D. M. Goldie Carnegie Laboratory of Physics, University of Dundee, Dundee, Scotland
,
W. E. Spear Carnegie Laboratory of Physics, University of Dundee, Dundee, Scotland
&
E. Z. Liu Carnegie Laboratory of Physics, University of Dundee, Dundee, Scotland
Pages 509-525 | Received 16 Feb 1990, Accepted 29 Mar 1990, Published online: 20 Aug 2006

Citations (8)

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Read on this site (2)

E.Z. Liu, P. Wickboldt, A.E. Wetsel, D. Pang, J.H. Chen & W. Paul. (1994) Mobility field dependence in a-Ge:H, a-SiGe:H, compensated a-Si: H, amorphous multilayer Si/SiGe/Si and the long-range potential fluctuation model. Philosophical Magazine B 70:1, pages 109-120.
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J.-H. Zhou & S.R. Elliott. (1992) Effect of light soaking on the photoconductivity and recombination in hydrogenated amorphous silicon. Philosophical Magazine B 66:6, pages 801-817.
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Articles from other publishers (6)

Mario Tucci, Luca Serenelli, Simona De Iuliis, Massimo Izzi, Giampiero de Cesare & Domenico Caputo. 2012. Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells. Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells 331 375 .
D.M. Goldie. (2007) Transient photoconductivity studies of band tails states in compensated a-Si:H. Journal of Non-Crystalline Solids 353:2, pages 130-135.
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D. Caputo, G. de Cesare, F. Palma, M. Tucci, C. Minarini & E. Terzini. (1997) Investigation of amorphous silicon compensated materials over a wide range of dopant concentrations. Thin Solid Films 303:1-2, pages 269-272.
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D. Caputo, G. De Cesare, F. Palma, M. Tucci, C. Minarini & E. Terzini. (2011) On the Compensation Mechanism of Amorphous Silicon Films: Study of Stability. MRS Proceedings 467.
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Harald Overhof. (2011) The Impact of a Long-Ranged Random Potential on the Transport Properties of Amorphous Semiconductors. MRS Proceedings 258.
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J. A. Howard & R. A. Street. (1991) Evidence for potential fluctuations in compensated amorphous silicon. Physical Review B 44:15, pages 7935-7940.
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