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Philosophical Magazine B Volume 63, 1991 - Issue 2
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Original Articles

Recombination at correlated dangling bonds and the effects of Fermi level position on steady-state photoconductwiry in amorphous silicon

E. Morgado Centro de Física Molecular das Universidades de Lisboa (INIC), Av. Rovisco Pais, Complexo I-IST, 1000 Lisboa, Portugal
Pages 529-542 | Received 15 Jan 1990, Accepted 26 Feb 1990, Published online: 20 Aug 2006

Citations (23)

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Read on this site (3)

F. Gaspari, T. Kosteski, S. Zukotynski, N.P. Kherani & W.T. Shmayda. (2000) Time evolution of the density of states of tritiated hydrogenated amorphous silicon. Philosophical Magazine B 80:4, pages 561-569.
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MinhQ. Tran. (1995) On thermal quenching of the photoconductivity in hydrogenated amorphous silicon. Philosophical Magazine B 72:1, pages 35-66.
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J. Hubin, A.V. Shah & E. Sauvain. (1992) Effects of dangling bonds on the recombination function in amorphous semiconductors. Philosophical Magazine Letters 66:3, pages 115-125.
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Articles from other publishers (20)

E. Morgado. (2004) Influence of light-soaking and annealing on electron and hole mobility–lifetime products in a-Si:H. Journal of Non-Crystalline Solids 338-340, pages 386-389.
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S.V. Kuznetsov. (2003) Independence of photoconductivity of p-type a-Si:H films on doping level and defect concentration. Journal of Non-Crystalline Solids 316:2-3, pages 217-227.
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Pietro P. Altermatt & Gernot Heiser. (2002) Predicted electronic properties of polycrystalline silicon from three-dimensional device modeling combined with defect-pool model. Journal of Applied Physics 92:5, pages 2561-2574.
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S. V. Kuznetsov. (2001) Numerical calculation of the temperature dependences of photoconductivity in the p-type a-Si:H. Semiconductors 35:10, pages 1191-1196.
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Stefan Costea, Franco Gaspari, Tome Kosteski, Stefan Zukotynski, Nazir P. Kherani & Walter T. Shmayda. (2011) Modeling of Beta Conductivity in Tritiated Amorphous Silicon. MRS Proceedings 609.
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Reinhard Schwarz. (1998) Dispersive transport in disordered semiconductors. Journal of Non-Crystalline Solids 227-230, pages 148-152.
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H.K. Lee, T.S. Suh, B.Y. Choe, K.S. Shinn, G. Cho & V. Perez-Mendez. (1997) Transient photoconductive gain in a-Si:H devices and its applications in radiation detection. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 399:2-3, pages 324-334.
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B. G. Budaguan, A. A. Aivazov, A. G. Radosel'sky & A. A. Popov. (2011) Photoconductivity and Density of States in “Microstructural” Amorphous Silicon. MRS Proceedings 467.
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F. Wang & R. Schwarz. (1995) Comprehensive numerical simulation of defect density and temperature-dependent transport properties in hydrogenated amorphous silicon. Physical Review B 52:20, pages 14586-14597.
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S.Z. Weisz, J. Avalos, M. Gomez, A. Many, Y. Goldstein & E. Savir. (1995) Surface states on amorphous silicon. Surface Science 338:1-3, pages 117-124.
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I. Balberg. (1994) The two carriers’ mobility-lifetime products and their light intensity dependencies in hydrogenated amorphous silicon. Journal of Applied Physics 75:2, pages 914-923.
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E. Morgado. (2011) Thermal Quenching and Photo-Enhancement of μτ Products in a-Si:H - The Role of Dangling Bonds and Band Tails. MRS Proceedings 336.
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E. Morgado. (1994) Recombination in a-Si:H: results from the standard and defect pool models. Recombination in a-Si:H: results from the standard and defect pool models.
E. Morgado. (1993) Electron and hole μτ products in a-Si:H and the standard dangling bond model. Journal of Non-Crystalline Solids 164-166, pages 627-630.
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C. Longeaud & J. P. Kleider. (1993) Trapping and recombination via dangling bonds in amorphous and glassy semiconductors under steady-state conditions: Application to the modulated photocurrent experiment. Physical Review B 48:12, pages 8715-8741.
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I. Balberg & Y. Lubianiker. (1993) Evidence for the defect-pool model from induced recombination level shifts in undoped a -Si:H . Physical Review B 48:12, pages 8709-8714.
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Tatsuo Shimizu. 1993. Current Topics in Amorphous Materials. Current Topics in Amorphous Materials 318 322 .
E. Morgado. (2011) Mobility-Lifetime Products in a-Si:H and the Dangling Bond Recombination Model. MRS Proceedings 258.
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Akiharu Morimoto, Minoru Matsumoto, Masahiro Yoshita, Minoru Kumeda & Tatsuo Shimizu. (1991) Doping effect of oxygen or nitrogen impurity in hydrogenated amorphous silicon films. Applied Physics Letters 59:17, pages 2130-2132.
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M. Favre, A. Shah, J. Hubin, E. Bustarret, M.A. Hachicha & S. Basrour. (1991) Nature of deep defects in bulk VHF-GD a-Si:H. Journal of Non-Crystalline Solids 137-138, pages 335-338.
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