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Philosophical Magazine B Volume 64, 1991 - Issue 6
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Original Articles

A study of the properties of hydrogenated amorphous germanium produced by r.f. glow discharge as the electrode gap is varied the link between microstructure and optoelectronic properties

By P. Wickboldt Division of Applied Sciences, Harvard University, Cambridge, Massachusetts, 02138, USA
,
S. J. Jones Division of Applied Sciences, Harvard University, Cambridge, Massachusetts, 02138, USA
,
F. C. Marques Instituto de Fisica, UNICAMP, P. O. Box 6165,13081 Campinas, SP, Brazil
,
D. Pang Beijing Polytechnic University, Beijing, 100 022, P.R. China
,
W. A. Turner Division of Applied Sciences, Harvard University, Cambridge, Massachusetts, 02138, USA
,
A. E. Wetsel Division of Applied Sciences, Harvard University, Cambridge, Massachusetts, 02138, USA
,
W. Paul Division of Applied Sciences, Harvard University, Cambridge, Massachusetts, 02138, USA
&
J. H. Chen Department of Physics, Boston College, Chestnut Hill, Massachusetts, 02167, USA
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Pages 655-674 | Received 07 May 1991, Accepted 10 Jun 1991, Published online: 20 Aug 2006

Citations (35)

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E.Z. Liu, P. Wickboldt, A.E. Wetsel, D. Pang, J.H. Chen & W. Paul. (1994) Mobility field dependence in a-Ge:H, a-SiGe:H, compensated a-Si: H, amorphous multilayer Si/SiGe/Si and the long-range potential fluctuation model. Philosophical Magazine B 70:1, pages 109-120.
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Articles from other publishers (34)

Volker Steenhoff, Martin Theuring, Martin Vehse, Karsten von Maydell & Carsten Agert. (2015) Ultrathin Resonant-Cavity-Enhanced Solar Cells with Amorphous Germanium Absorbers. Advanced Optical Materials 3:2, pages 182-186.
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Abdelkader Belfedal, Yahya Bouizem, Jamal Dine Sib & Larbi Chahed. (2012) Films thickness effect on structural and optoelectronic properties of hydrogenated amorphous germanium (a-Ge:H). Journal of Non-Crystalline Solids 358:11, pages 1404-1409.
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Y Bouizem, A Belfedal, J D Sib, A Kebab & L Chahed. (2007) Hydrogen-bonding configuration effects on the optoelectronic properties of glow discharge a-Si 1− x Ge x :H with large x . Journal of Physics: Condensed Matter 19:35, pages 356215.
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Y Bouizem, A Belfedal, J D Sib, A Kebab & L Chahed. (2005) Optoelectronic properties of hydrogenated amorphous germanium deposited by rf-PECVD as a function of applied rf-power. Journal of Physics: Condensed Matter 17:33, pages 5149-5158.
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J. Prokop, R. Merica, F. Glatz, S. Veprek, F. R. Klingan & W. A. Herrmann. 2005. Organosilicon Chemistry Set. Organosilicon Chemistry Set 815 820 .
Hidetoshi Oheda. (2005) Photoinduced structural instability in a hydrogenated amorphous silicon-germanium alloy with high structural inhomogeneity. Physical Review B 71:15.
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Y. Bouizem, A. Belfedal, J.D. Sib & L. Chahed. (2003) Density of states in hydrogenated amorphous germanium seen via optical absorption spectra. Solid State Communications 126:12, pages 675-680.
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Y Bouizem, A Belfedal, J.D Sib & L Chahed. (2000) Determination of absorption coefficients from the ratio between absorptance and transmittance measurements of weakly absorbing films. Optics Communications 178:1-3, pages 111-116.
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M. M. de LimaJr.Jr., R. G. Lacerda, J. Vilcarromero & F. C. Marques. (1999) Coefficient of thermal expansion and elastic modulus of thin films. Journal of Applied Physics 86:9, pages 4936-4942.
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J. Vilcarromero & F.C. Marques. (1999) Hydrogen in amorphous germanium-carbon. Thin Solid Films 343-344, pages 445-448.
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F. C. Marques, P. Wickboldt, D. Pang, J. H. Chen & W. Paul. (1998) Stress and thermomechanical properties of amorphous hydrogenated germanium thin films deposited by glow discharge. Journal of Applied Physics 84:6, pages 3118-3124.
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Stephan Will, Helmut Mell, Margarethe Poschenrieder & Walther Fuhs. (1998) a-Si:H deposited at high rate on the cathode of a rf-PECVD reactor. Journal of Non-Crystalline Solids 227-230, pages 29-33.
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Chih-Chiang Chen, Yoram Lubianiker, J. David Cohen, Jeffrey C. Yang, Subhendu Guha, Paul Wickboldt & William Paul. (2011) The Electronic Structure, Metastability and Transport Properties of Optimized Amorphous Silicon-Germanium Alloys. MRS Proceedings 507.
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Paul Wickboldt, Dawen Pang, William Paul, Joseph H. Chen, Fan Zhong, Chih-Chiang Chen, J. David Cohen & D. L. Williamson. (1997) High performance glow discharge a-Si1−xGex:H of large x. Journal of Applied Physics 81:9, pages 6252-6267.
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Paul Wickboldt, Dawen Pang, William Paul, Joseph H. Chen, Chih-Chiang Chen & J. David Cohen. (2011) Ambipolar Phototransport (μτ e = μτ h ) Observed as an Intrinsic Property of a-SiGe:H . MRS Proceedings 467.
Crossref
Paul Wickboldt, Dawen Pang, Joseph H. Chen, Hyeonsik M. Cheong & William Paul. (1996) Examination of (crystallized a-Ge:H)/a-SiNx:H multilayers which display photoluminescence. Journal of Non-Crystalline Solids 198-200, pages 813-816.
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Paul Wickboldt, Dawen Pang, William Paul, Joseph H. Chen, Fan Zhong, J.David Cohen, Yan Chen & Don L. Williamson. (1996) Improved a-Si1 − xGex:H of large x deposited by PECVD. Journal of Non-Crystalline Solids 198-200, pages 567-571.
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Joseph H. Chen, Dawen Pang, Paul Wickboldt, Hyeonsik M. Cheong & William Paul. (1996) Visible room-temperature photoluminescence from oxidized germanium. Journal of Non-Crystalline Solids 198-200, pages 128-131.
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Tilo P. Drüsedau, Paul Wickboldt, Joseph H. Chen, Dawen Pang, Hubertus Freistedt, Jürgen Bläsing & Wolfgang Bock. (1996) Plasma deposited non-stoichiometric hydrogenated germanium sulfide a-Ge1−xSx:H (x < 0.3). Journal of Non-Crystalline Solids 198-200, pages 111-114.
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S. Vepřek, J. Prokop, F. Glatz, R. Merica, F. R. Klingan & W. A. Herrmann. (1996) Organometallic Chemical Vapor Deposition of Germanium from a Cyclic Germylene, 1,3-Di- tert -butyl-1,3,2-diazagermolidin-2-ylidine . Chemistry of Materials 8:4, pages 825-831.
Crossref
J. Prokop, R. Merica, F. Glatz, S. Veprek, F. R. Klingan & W. A. Herrmann. 1995. Organosilicon Chemistry II. Organosilicon Chemistry II 815 820 .
Tanay Seth, P.N. Dixit, C. Mukherjee, C. Anandan & R. Bhattacharyya. (1995) Hydrogenated amorphous silicon films prepared at low substrate temperature on a cathode of an asymmetric r.f. plasma CVD system. Thin Solid Films 264:1, pages 11-17.
Crossref
Thilo P. Drüsedau. (2006) Electronic Transport through Silicon (a‐Si:H) Barriers in Hydrogenated Amorphous Germanium (a‐Ge:H). physica status solidi (b) 187:1, pages 117-127.
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G. Marcano, A. R. Zanatta & I. Chambouleyron. (1994) Photoconductivity of intrinsic and nitrogen-doped hydrogenated amorphous germanium thin films. Journal of Applied Physics 75:9, pages 4662-4667.
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T. Drüsedau & B. Schröder. (1994) Optimization of process parameters for the deposition of improved a -Ge:H by dc magnetron sputtering . Journal of Applied Physics 75:6, pages 2864-2875.
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P. Kounavis, D. Mataras, N. Spiliopoulos, E. Mytilineou & D. Rapakoulias. (1994) Influence of plasma conditions on the defect formation mechanism in amorphous hydrogenated silicon. Journal of Applied Physics 75:3, pages 1599-1606.
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Paul Wickboldt, Dawen Pang & William Paul. (2011) A Basic Study of the GeH 4 + H 2 RF Discharge . MRS Proceedings 336.
Crossref
F. Glatz, J. prokop, S. Vepřek, F.R. Klingan & W.A. Herrmann. (2011) Thermal CVD of Amorphous Germanium Films From 2, 5-Bis (Tert.-Butyl) -2, 5-Diaza-l-Germa-Cyclopentane Organometallic Precursor. MRS Proceedings 336.
Crossref
M.J. Williams, S.M. Cho, S.S. He & G. Lucovsky. (2011) Minority Carrier Diffusion Lengths And Photoconductivity In a-Si,N:H Deposited By Remote Pecvd. MRS Proceedings 336.
Crossref
T. Drüsedau, B. Müller, A. Scholz & B. Schröder. (1993) Key parameters for further reduction of gap states in a-Ge:H and its improved stability under keV-electron irradiation. Journal of Non-Crystalline Solids 164-166, pages 75-78.
Crossref
M.J Williams, S.M Cho, S.S He & G Lucovsky. (1993) Hydrogenated amorphous silicon-nitrogen alloys, a-Si,N:H: A candidate alloy for the wide band gap photo-active material in tandem photovoltaic (PV) devices. Journal of Non-Crystalline Solids 164-166, pages 67-70.
Crossref
M.J. Williams, S.M. Cho & G. Lucovsky. (1993) Hydrogenated Amorphous Silicon-Nitrogen, a-Si,N:H ALLOYS: An Alternative to A-SI,C:H for the Wide Band Gap Photo-Active Material in Tandem PV Cells. MRS Proceedings 297.
Crossref
Rung-Ywan Tsai, L. C. Kuo & F. C. Ho. (2011) Optical Characterization of Amorphous SiN x :H Films Prepared by Plasma-Enhanced CVD . MRS Proceedings 281.
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J. H. Chen, P. Wickboldt, D. Pang, A. E. Wetsel & W. Paul. (2011) Effects of Gas Dilution on the Growth and Properties of Glow Discharge a-Ge:H. MRS Proceedings 258.
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