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Philosophical Magazine B Volume 65, 1992 - Issue 3
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Original Articles

Interface atomic structure determination of an AI(001)/GaAs(001) bicrystal using higher-order Law zone analysis and atom location by channelling-enhanced microanalysis

M. A. Al-Khafaji H. H. Wills Physics Laboratory, Bristol University, Tyndall Avenue, Bristol, BS8 1TL, England
,
D. Cherns H. H. Wills Physics Laboratory, Bristol University, Tyndall Avenue, Bristol, BS8 1TL, England
,
C. J. Rossouw H. H. Wills Physics Laboratory, Bristol University, Tyndall Avenue, Bristol, BS8 1TL, England
&
D. A. Woolf H. H. Wills Physics Laboratory, Bristol University, Tyndall Avenue, Bristol, BS8 1TL, England; Department of Physics, University of Wales, College of Cardiff, P.O. Box 913, Cardiff, CF1 3TH, Wales
Pages 385-399 | Received 11 Jun 1991, Accepted 21 Jul 1991, Published online: 20 Nov 2006

Citations (4)

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Read on this site (1)

C.J. Rossouw & P.R. Miller. (1993) Voltage and temperature dependence of silicon high-order Laue zone line positions. Philosophical Magazine B 67:5, pages 733-745.
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Articles from other publishers (3)

I.P. Jones. 2003. 63 I .
L. Haworth, J. Lu, P. Hill, D. I. Westwood, J. E. Macdonald, N. Hartmann, A. Schneider & D. R. T. Zahn. (1998) Formation of an Sb–N compound during nitridation of InSb (001) substrates using atomic nitrogen. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 16:4, pages 2254-2260.
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C.J. Rossouw & D.D. Perovic. (1993) Dynamical LACBED analysis of Si/SiGe and Si/SiB multilayer structures. Ultramicroscopy 48:1-2, pages 49-61.
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