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Philosophical Magazine B Volume 65, 1992 - Issue 5
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Original Articles

Bond formation in hafnium atom implantation into SiC induced by high-energy electron irradiation

H. Yasuda Department of Materials Science and Engineering, Faculty of Engineering, Osaka University, Suita, Osaka, 565, Japan
,
H. Mori Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Suita, Osaka, 565, Japan
,
T. Sakata Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Suita, Osaka, 565, Japan
,
M. Naka Welding Research Institute, Osaka University, Suita, Osaka, 565, Japan
&
H. Fujita Research Institute for Science and Engineering, Kinki University, Kowakae, Higashi-Osaka, Osaka, 577, Japan
Pages 1001-1009 | Received 12 Aug 1991, Accepted 29 Oct 1991, Published online: 20 Aug 2006

Citations (4)

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Read on this site (1)

H. Yasuda & K. Furuya. (2000) Irradiation temperature dependence of chemical and topological disordering induced by high-energy electron irradiation in GaSb. Philosophical Magazine A 80:10, pages 2355-2363.
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Articles from other publishers (3)

Frances M. Ross & Andrew M. Minor. 2019. Springer Handbook of Microscopy. Springer Handbook of Microscopy 101 187 .
Hidehiro Yasuda & Hirotaro Mori. (2004) Effect of Bonding Character on Electron-Irradiation-Induced Chemical Disordering and Amorphization in III-V Compounds. MATERIALS TRANSACTIONS 45:1, pages 2-4.
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H. Mori & T. Sakata. (1994) High resolution electron microscopy study on crystallization of gold-implanted amorphous SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 94:1-2, pages 73-80.
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