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H. Castán, S. Dueñas, A. Gómez, H. García, L. Bailón, P.C. Feijoo, M. Toledano-Luque, A. del Prado, E. San Andrés & M.L. Lucía. (2011) Electrical characterization of high-pressure reactive sputtered ScOx films on silicon. Thin Solid Films 519:7, pages 2268-2272.
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P. C. Feijoo, A. del Prado, M. Toledano-Luque, E. San Andrés & M. L. Lucía. (2010) Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties. Journal of Applied Physics 107:8.
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P. C. Feijoo, A. del Prado, M. Toledano-Luque, E. San Andrés & M. L. Lucía. (2010) Nitridation of Si by N[sub 2] Electron Cyclotron Resonance Plasma and Integration with ScO[sub x] Deposition. Journal of The Electrochemical Society 157:4, pages H430.
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A. del Prado, M. Toledano-Luque, E. San Andres, P. C. Feijoo & M. L. Lucia. (2009) Growth of Silicon Nitride on Silicon by Electron Cyclotron Resonance Plasma Nitridation. Growth of Silicon Nitride on Silicon by Electron Cyclotron Resonance Plasma Nitridation.
A. del Prado, E. San Andrés, I. Mártil, G. González-Dı́az, W. Bohne, J. Röhrich & B. Selle. (2004) Influence of H on the composition and atomic concentrations of “N-rich” plasma deposited SiOxNyHz films. Journal of Applied Physics 95:10, pages 5373-5382.
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W Bohne, J Röhrich, A Schöpke, B Selle, I Sieber, W Fuhs, Á del Prado, E San Andrés, I Mártil & G González-Dı́az. (2004) Compositional analysis of thin SiOxNy:H films by heavy-ion ERDA, standard RBS, EDX and AES: a comparison. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 217:2, pages 237-245.
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I. Mártil, A. del Prado, E. San Andrés, G. González Dı́az & F. L. Martı́nez. (2003) Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal–insulator–semiconductor structures with Si, In0.53Ga0.47As, and InP. Journal of Applied Physics 94:4, pages 2642-2653.
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A. del Prado, E. San Andrés, I. Mártil, G. González-Dı́az, D. Bravo, F. J. López, M. Fernández & F. L. Martı́nez. (2003) Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films. Journal of Applied Physics 94:2, pages 1019-1029.
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A. del Prado, E. San Andrés, I. Mártil, G. González-Diaz, D. Bravo, F. J. López, W. Bohne, J. Röhrich, B. Selle & F. L. Martínez. (2003) Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition. Journal of Applied Physics 93:11, pages 8930-8938.
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F L Martínez, A del Prado, I Mártil, G González-Díaz, K Kliefoth & W Füssel. (2001)
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F. L. Martínez, A. del Prado, I. Mártil, G. González-Diaz, W. Bohne, W. Fuhs, J. Röhrich, B. Selle & I. Sieber. (2001)
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W. Bohne, W. Fuhs, J. R�hrich, B. Selle, G. Gonz�lez-D�az, I. M�rtil, F. L. Mart�nez & A. del Prado. (2000) Compositional analysis of amorphous SiNx: H films by ERDA and infrared spectroscopy. Surface and Interface Analysis 30:1, pages 534-537.
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E. San Andrés, A. del Prado, F. L. Martı́nez, I. Mártil, D. Bravo & F. J. López. (2000) Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx:H films deposited by electron cyclotron resonance. Journal of Applied Physics 87:3, pages 1187-1192.
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F. L. Martı́nez, A. del Prado, I. Mártil, G. González-Dı́az, B. Selle & I. Sieber. (1999) Thermally induced changes in the optical properties of SiNx:H films deposited by the electron cyclotron resonance plasma method. Journal of Applied Physics 86:4, pages 2055-2061.
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E. Redondo, N. Blanco, I. Mártil, G. González-Dı́az, R. Pelaez, S. Dueñas & H. Castán. (1999) Thermally induced improvements on SiNx:H/InP devices. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17:4, pages 2178-2182.
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A. del Prado, F. L. Martı́nez, I. Mártil, G. González-Dı́az & M. Fernández. (1999) Effect of substrate temperature in SiOxNy films deposited by electron cyclotron resonance. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17:4, pages 1263-1268.
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F.L Martı́nez, I Mártil, G González-Dı́az, B Selle & I Sieber. (1998) Influence of rapid thermal annealing processes on the properties of SiN :H films deposited by the electron cyclotron resonance method. Journal of Non-Crystalline Solids 227-230, pages 523-527.
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S. Garcia, J.M. Martin, I. Martil & G. Gonzalez-Diaz. (1998) Dependence of the physical properties of SiNx:H films deposited by the ECR plasma method on the discharge size. Thin Solid Films 315:1-2, pages 22-28.
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S. Garcia, I. Martil, G. Gonzalez Diaz, E. Castan, S. Dueñas & M. Fernandez. (1998) Deposition of SiNx:H thin films by the electron cyclotron resonance and its application to Al/SiNx:H/Si structures. Journal of Applied Physics 83:1, pages 332-338.
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