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Philosophical Magazine B Volume 77, 1998 - Issue 1
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Original Articles

Oxygen enhancement of 1-54 μm Er3+ luminescence in hydrogenated amorphous silicon

M. Kechouane Laboratoire ‘Couches Minces et Semiconducteurs’, Université des Sciences et de la Technologie Houari Boumedienne, Institut de Physique, BP 33, El Alia, Bab Ezzouar, 16111, Alger, Algeria
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N. Beldi Laboratoire ‘Couches Minces et Semiconducteurs’, Université des Sciences et de la Technologie Houari Boumedienne, Institut de Physique, BP 33, El Alia, Bab Ezzouar, 16111, Alger, Algeria
,
T. Mohammed-Brahim Laboratoire ‘Couches Minces et Semiconducteurs’, Université des Sciences et de la Technologie Houari Boumedienne, Institut de Physique, BP 33, El Alia, Bab Ezzouar, 16111, Alger, Algeria
,
H. Ľharidon France Télécom Centre National ďEtudes des Télécommunications, 22301, Lannion, France
,
M. Salvi France Télécom Centre National ďEtudes des Télécommunications, 22301, Lannion, France
,
M. Gauneau France Télécom Centre National ďEtudes des Télécommunications, 22301, Lannion, France
&
P. N. Favennec France Télécom Centre National ďEtudes des Télécommunications, 22301, Lannion, France
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Pages 137-145 | Received 06 Jan 1997, Accepted 22 May 1997, Published online: 13 Aug 2009

Citations (4)

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Read on this site (1)

M. Kechouane, N. Beldi, O. Mouheb, T. Mohammed-Brahim, A.S. Barriere, H. L'Haridon & M. Gauneau. (1999) Erbium-doped hydrogenated amorphous silicon prepared by dc sputtering. Philosophical Magazine B 79:8, pages 1205-1211.
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Articles from other publishers (3)

R. Cherfi, A. Abdelmoumene, M. Kechouane, A. Rahal, M. Aoucher & T. Mohammed‐Brahim. (2009) Deposition temperature effects on the characteristics of a‐Si:H deposited by pulsed DC magnetron sputtering. physica status solidi (a) 206:7, pages 1504-1509.
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M. Kechouane, D. Biggemen & L. R. Tessler. (2004) 1.54 μm luminescence quenching of erbium‐doped hydrogeated amorphous silicon deposited by D.C. magnetron sputtering. physica status solidi (c) 1:2, pages 285-289.
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H. Kühne, G. Weiser, E. I. Terukov, A. N. Kusnetsov & V. Kh. Kudoyarova. (1999) Resonant nonradiative energy transfer to erbium ions in amorphous hydrogenated silicon. Journal of Applied Physics 86:2, pages 896-901.
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