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Original Articles

An Ionization Type Semiconductor Photographic System Based on High-resistivity Semiconductor Film

Pages 69-71 | Received 15 Oct 1996, Published online: 08 Jul 2016

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Read on this site (4)

B G Salamov. (2009) Semiconductor gas discharge IR image converter with internal image amplification. The Imaging Science Journal 57:3, pages 152-161.
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B G Salamov. (2004) Light emission features in ionization-type semiconductor photographic system. The Imaging Science Journal 52:4, pages 225-233.
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B G Salamov, H Yücel Kurt & E Kurt. (2003) An analysis of the spatial homogeneity of a photodetector surface in an infrared image converter using the fractal dimension. The Imaging Science Journal 51:4, pages 187-197.
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H Yucel Kurt, E Kurt & B G Salamov. (2001) An analysis of the image homogeneity in an ionization-type infrared image converter using the fractal dimension. The Imaging Science Journal 49:4, pages 205-212.
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Articles from other publishers (2)

B G Salamov. (2004) Behaviour of light emission in a semiconductor gas discharge IR image converter. Journal of Physics D: Applied Physics 37:18, pages 2496-2501.
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H. Yücel Kurt, E. Kurt & B. G. Salamov. (2004) Fractal processing for an analysis of the quality and resistivity of large semiconductor plates. Crystal Research and Technology 39:9, pages 743-753.
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