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Philosophical Magazine Volume 85, 2005 - Issue 32
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Original Articles

Segregation in InxGa1−xAs/GaAs Stranski–Krastanow layers grown by metal–organic chemical vapour deposition

E. Piscopiello Electron Microscopy for Materials Science, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, BelgiumCorrespondence[email protected]
,
A. Rosenauer Electron Microscopy for Materials Science, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium; Institut für Festköperphysik, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany
,
A. Passaseo National Nanotechnology Laboratory, University of Lecce, Via Arnesano, 73100 Lecce, Italy
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E. H. Montoya Rossi Instituto Peruano de Energía Nuclear, Avenida Canada 1470, Lima 41, Peru
&
G. Van Tendeloo Electron Microscopy for Materials Science, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
Pages 3857-3870 | Received 21 Apr 2005, Accepted 02 Jul 2005, Published online: 21 Feb 2007

Citations (10)

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Read on this site (1)

EHM Rossi, A Rosenauer & G. Van Tendeloo. (2007) Influence of strain, specimen orientation and background estimation on composition evaluation of InAs/GaAs by TEM. Philosophical Magazine 87:29, pages 4461-4473.
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Articles from other publishers (9)

P. Kükelhan, S. Firoozabadi, A. Beyer, L. Duschek, C. Fuchs, J.O. Oelerich, W. Stolz & K. Volz. (2019) Segregation at interfaces in (GaIn)As/Ga(AsSb)/(GaIn)As- quantum well heterostructures explored by atomic resolution STEM. Journal of Crystal Growth 524, pages 125180.
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Thomas Walther. (2019) Measurement of Diffusion and Segregation in Semiconductor Quantum Dots and Quantum Wells by Transmission Electron Microscopy: A Guide. Nanomaterials 9:6, pages 872.
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P. KÜKELHAN, A. BEYER, C. FUCHS, M.J. WESELOH, S.W. KOCH, W. STOLZ & K. VOLZ. (2017) Atomic structure of ‘W’-type quantum well heterostructures investigated by aberration-corrected STEM. Journal of Microscopy 268:3, pages 259-268.
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A M Sanchez, A M Beltran, R Beanland, T Ben, M H Gass, F de la Peña, M Walls, A G Taboada, J M Ripalda & S I Molina. (2010) Blocking of indium incorporation by antimony in III–V-Sb nanostructures. Nanotechnology 21:14, pages 145606.
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D Gerthsen, H Blank, D Litvinov, R Schneider, A Rosenauer, T Passow, A Grau, P Feinäugle, H Kalt, C Klingshirn & M Hetterich. (2010) On the incorporation of indium in InAs-based quantum structures. Journal of Physics: Conference Series 209, pages 012006.
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D. Litvinov, H. Blank, R. Schneider, D. Gerthsen, T. Vallaitis, J. Leuthold, T. Passow, A. Grau, H. Kalt, C. Klingshirn & M. Hetterich. (2008) Influence of InGaAs cap layers with different In concentration on the properties of InGaAs quantum dots. Journal of Applied Physics 103:8.
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E. Luna, F. Ishikawa, P. D. Batista & A. Trampert. (2008) Indium distribution at the interfaces of (Ga,In)(N,As)∕GaAs quantum wells. Applied Physics Letters 92:14, pages 141913.
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D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, Thorsten Passow & Michael Hetterich. (2007) The Role of Segregation in InGaAs Heteroepitaxy. Materials Science Forum 539-543, pages 3540-3545.
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D. Litvinov, D. Gerthsen, A. Rosenauer, M. Schowalter, T. Passow, P. Feinäugle & M. Hetterich. (2006) Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in . Physical Review B 74:16.
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