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Philosophical Magazine Volume 84, 2004 - Issue 20

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Original Articles

The effect of the static atomic displacements on the structure factors of weak reflections in cubic semiconductor alloys

Frank Glas Laboratoire de Photonique et de Nanostructures, Centre National de la Recherche Scientifique, route de Nozay, 91460 Marcoussis, France

Pages 2055-2074 | Received 05 Dec 2003, Accepted 10 Feb 2004, Published online: 02 Sep 2006

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https://doi.org/10.1080/14786430410001678244

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Tim Grieb, Florian F. Krause, Marco Schowalter, Dennis Zillmann, Roman Sellin, Knut Müller-Caspary, Christoph Mahr, Thorsten Mehrtens, Dieter Bimberg & Andreas Rosenauer. (2018) Strain analysis from nano-beam electron diffraction: Influence of specimen tilt and beam convergence. Ultramicroscopy 190, pages 45-57.
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Tim Grieb, Knut Müller, Emmanuel Cadel, Andreas Beyer, Marco Schowalter, Etienne Talbot, Kerstin Volz & Andreas Rosenauer. (2014) Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM. Microscopy and Microanalysis 20:6, pages 1740-1752.
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Marco Schowalter, Ingo Stoffers, Florian F. Krause, Thorsten Mehrtens, Knut Müller, Malte Fandrich, Timo Aschenbrenner, Detlef Hommel & Andreas Rosenauer. (2014) Influence of Static Atomic Displacements on Composition Quantification of AlGaN/GaN Heterostructures from HAADF-STEM Images. Microscopy and Microanalysis 20:5, pages 1463-1470.
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Tim Grieb, Knut Müller, Rafael Fritz, Vincenzo Grillo, Marco Schowalter, Kerstin Volz & Andreas Rosenauer. (2013) Quantitative chemical evaluation of dilute GaNAs using ADF STEM: Avoiding surface strain induced artifacts. Ultramicroscopy 129, pages 1-9.
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Knut Müller, Andreas Rosenauer, Marco Schowalter, Josef Zweck, Rafael Fritz & Kerstin Volz. (2012) Strain Measurement in Semiconductor Heterostructures by Scanning Transmission Electron Microscopy. Microscopy and Microanalysis 18:5, pages 995-1009.
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Tim Grieb, Knut Müller, Rafael Fritz, Marco Schowalter, Nils Neugebohrn, Nikolai Knaub, Kerstin Volz & Andreas Rosenauer. (2012) Determination of the chemical composition of GaNAs using STEM HAADF imaging and STEM strain state analysis. Ultramicroscopy 117, pages 15-23.
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Tim Grieb, Knut Müller, Oleg Rubel, Rafael Fritz, Claas Gloistein, Nils Neugebohrn, Marco Schowalter, Kerstin Volz & Andreas Rosenauer. (2011) Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging. Journal of Physics: Conference Series 326, pages 012033.
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Angelika Pretorius, Thomas Schmidt, Timo Aschenbrenner, Tomohiro Yamaguchi, Christian Kübel, Knut Müller, Heiko Dartsch, Detlef Hommel, Jens Falta & Andreas Rosenauer. (2011) Microstructural and compositional analyses of GaN-based nanostructures. physica status solidi (b) 248:8, pages 1822-1836.
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Knut Müller, Marco Schowalter, Andreas Rosenauer, Dongzhi Hu, Daniel M. Schaadt, Michael Hetterich, Philippe Gilet, Oleg Rubel, Rafael Fritz & Kerstin Volz. (2011) Atomic scale annealing effects on In Ga N As studied by TEM three-beam imaging . Physical Review B 84:4.
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Andreas Rosenauer, Thorsten Mehrtens, Knut Müller, Katharina Gries, Marco Schowalter, Parlapalli Venkata Satyam, Stephanie Bley, Christian Tessarek, Detlef Hommel, Katrin Sebald, Moritz Seyfried, Jürgen Gutowski, Adrian Avramescu, Karl Engl & Stephan Lutgen. (2011) Composition mapping in InGaN by scanning transmission electron microscopy. Ultramicroscopy 111:8, pages 1316-1327.
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Knut Müller, Marco Schowalter, Andreas Rosenauer, Oleg Rubel & Kerstin Volz. (2010) Effect of bonding and static atomic displacements on composition quantification in . Physical Review B 81:7.
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E Carlino. (2010) Quantitative Z-contrast atomic resolution studies of semiconductor nanostructured materials. Journal of Physics: Conference Series 209, pages 012005.
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J. T. Titantah, D. Lamoen, M. Schowalter & A. Rosenauer. (2009) Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga1−xInxAs/GaAs quantum wells. Journal of Applied Physics 105:8.
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C. Frigeri, G. Attolini, M. Bosi, C. Pelosi & F. Germini. (2009) Parasitic Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP∕GaAs: A Study by the Chemically Sensitive (200) Diffraction. Journal of The Electrochemical Society 156:6, pages H448.
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K. Volz, T. Torunski, O. Rubel & W. Stolz. (2008) Direct structural evidence of the change in N-III bonding in (GaIn)(NAs) before and after thermal annealing. Journal of Applied Physics 104:5.
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O. Rubel, I. Németh, W. Stolz & K. Volz. (2008) Modeling the compositional dependence of electron diffraction in dilute GaAs- and GaP-based compound semiconductors. Physical Review B 78:7.
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D. Jacob, J.M. Zuo, A. Lefebvre & Y. Cordier. (2008) Composition analysis of semiconductor quantum wells by energy filtered convergent-beam electron diffraction. Ultramicroscopy 108:4, pages 358-366.
Crossref

V. Grillo, E. Carlino & F. Glas. (2008) Influence of the static atomic displacement on atomic resolution Z-contrast imaging. Physical Review B 77:5.
Crossref

T J Titantah, D Lamoen, M Schowalter & A Rosenauer. 2008. Microscopy of Semiconducting Materials 2007. Microscopy of Semiconducting Materials 2007 189 194 .

E Luna, A Trampert, E-M Pavelescu & M Pessa. 2008. Microscopy of Semiconducting Materials 2007. Microscopy of Semiconducting Materials 2007 99 102 .

E Luna, A Trampert, E-M Pavelescu & M Pessa. (2007) Nitrogen-enhanced indium segregation in (Ga,In)(N,As)/GaAs multiple quantum wells grown by molecular-beam epitaxy. New Journal of Physics 9:11, pages 405-405.
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K. Volz, T. Torunski, O. Rubel, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter & A. Rosenauer. (2007) Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells. Journal of Applied Physics 102:8.
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J. T. Titantah, D. Lamoen, M. Schowalter & A. Rosenauer. (2007) Temperature effect on the 002 structure factor of ternary crystals . Physical Review B 76:7.
Crossref

B. Satpati, J.B. Rodriguez, A. Trampert, E. Tournié, A. Joullié & P. Christol. (2007) Interface analysis of InAs/GaSb superlattice grown by MBE. Journal of Crystal Growth 301-302, pages 889-892.
Crossref

C. Frigeri, C. Pelosi, F. Germini, G. Attolini & M. Bosi. (2007) Combined (200) DF‐TEM and X‐ray diffraction investigations of interfaces in MOVPE grown InGaP/GaAs heterojunctions. physica status solidi c 4:4, pages 1485-1489.
Crossref

K. Volz, O. Rubel, T. Torunski, S. D. Baranovskii & W. Stolz. (2006) Nanoanalytical quantification of the nitrogen content in Ga(NAs)∕GaAs by using transmission electron microscopy in combination with refined structure factor calculation. Applied Physics Letters 88:8.
Crossref

A. Rosenauer, M. Schowalter, F. Glas & D. Lamoen. (2005) First-principles calculations of 002 structure factors for electron scattering in strained . Physical Review B 72:8.
Crossref

A Rosenauer, M Schowalter, F Glas & D Lamoen. 2005. Microscopy of Semiconducting Materials. Microscopy of Semiconducting Materials 151 154 .

F Glas, G Patriarche, L Thevenard & A Lemaître. 2005. Microscopy of Semiconducting Materials. Microscopy of Semiconducting Materials 147 150 .

A. Lemaître, G. Patriarche & F. Glas. (2004) Composition profiling of InAs∕GaAs quantum dots. Applied Physics Letters 85:17, pages 3717-3719.
Crossref

F. Glas, G. Patriarche, L. Largeau & A. Lemaître. (2004) Determination of the Local Concentrations of Mn Interstitials and Antisite Defects in . Physical Review Letters 93:8.
Crossref

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The effect of the static atomic displacements on the structure factors of weak reflections in cubic semiconductor alloys

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The effect of the static atomic displacements on the structure factors of weak reflections in cubic semiconductor alloys

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