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P. K. Das, R. Paul, S. Chakrabarti, B. Chatterjee, S. Pahari & K. P. Ghatak. 2021. Emerging Trends in Terahertz Engineering and System Technologies. Emerging Trends in Terahertz Engineering and System Technologies
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Kamakhya Prasad GhatakKamakhya Prasad Ghatak. 2016. Dispersion Relations in Heavily-Doped Nanostructures. Dispersion Relations in Heavily-Doped Nanostructures
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Kamakhya Prasad Ghatak & Sitangshu BhattacharyaKamakhya Prasad Ghatak & Sitangshu Bhattacharya. 2014. Debye Screening Length. Debye Screening Length
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Aiman bin Mohd Halil, Masakatsu Maeda & Yasuo Takahashi. (2013) Interfacial Nanostructure and Electrical Properties of Ti<sub>3</sub>SiC<sub>2</sub> Contact on p-Type Gallium Nitride. MATERIALS TRANSACTIONS 54:6, pages 890-894.
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Aiman bin Mohd Halil, Masakatsu Maeda & Yasuo Takahashi. (2012)
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Yan Ding, Weiling Guo, Yanxu Zhu, Jianpeng Liu & Weiwei Yan. (2012) Rapid thermal annealing effects on vacuum evaporated ITO for InGaN/GaN blue LEDs. Journal of Semiconductors 33:6, pages 066004.
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Moon Sung Kang, Chul-Ho Lee, Jun Beom Park, Hyobin Yoo & Gyu-Chul Yi. (2012) Gallium nitride nanostructures for light-emitting diode applications. Nano Energy 1:3, pages 391-400.
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S. Pahari, S. Bhattacharya, D. De, S.M. Adhikari, A. Niyogi, A. Dey, N. Paitya, S.C. Saha, K.P. Ghatak & P.K. Bose. (2010) Influence of crossed electric and quantizing magnetic fields on the Einstein relation in nonlinear optical, optoelectronic and related materials: Simplified theory, relative comparison and suggestion for experimental determination. Physica B: Condensed Matter 405:18, pages 4064-4078.
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Arif Khan & Atanu Das. (2010) Diffusivity–mobility relationship for heavily doped semiconductors exhibiting band tails. Physica B: Condensed Matter 405:3, pages 817-821.
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S. Nikishin, I. Chary, B. Borisov, V. Kuryatkov, Yu. Kudryavtsev, R. Asomoza, S. Yu. Karpov & M. Holtz. (2009) Mechanism of carrier injection in (Ni/Au)/p-AlxGa1−xN:Mg(≤x<0.1) Ohmic contacts. Applied Physics Letters 95:16.
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K.P. Ghatak, S. Bhattacharya, S. Pahari, D. De & R. Benedictus. (2009) Einstein relation in n-i-p-i and microstructures of nonlinear optical, optoelectronic and related materials: Simplified theory, relative comparison and suggestions for an experimental determination. Superlattices and Microstructures 46:3, pages 387-414.
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Masakatsu Maeda, Noriyuki Matsumoto, Hiroo Hatakawa & Yasuo Takahashi. (2009) Reaction between GaN and Metallic Deposition Films. QUARTERLY JOURNAL OF THE JAPAN WELDING SOCIETY 27:2, pages 204s-208s.
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Atanu Das & Arif Khan. (2008) Mobility–diffusivity relationship for heavily doped organic semiconductors. Applied Physics A 93:2, pages 527-532.
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A. Khan & A. Das. (2007) Magnetic quantization of the energy states in heavily doped semiconductors with nonparabolic energy bands. Applied Physics A 89:3, pages 695-699.
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Changzhi Lu, Xuesong Xie, Xiudian Zhu, Dongfeng Wang, Arif Khan, Ibrahima Diagne & S. Noor Mohammad. (2006) High-temperature electrical transport in AlxGa1−xN∕GaN modulation doped field-effect transistors. Journal of Applied Physics 100:11.
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J. Alam & S. Noor Mohammad. (2006) Doping induced surface chemistry dictating the characteristics of Schottky contacts to III-V nitride semiconductors. The Journal of Chemical Physics 125:4.
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Chin-Yuan Hsu, Wen-How Lan & YewChung Sermon Wu. (2006) The Influences of Contact Interfaces Between the Indium Tin Oxide-Based Contact Layer and GaN-Based LEDs. Journal of The Electrochemical Society 153:5, pages G475.
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Abhishek Motayed & S. Noor Mohammad. (2005) Chemicophysical surface treatment and the experimental demonstration of Schottky-Mott rules for metal∕semiconductor heterostructure interfaces. The Journal of Chemical Physics 123:19.
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S. Noor Mohammad. (2005) Contact mechanisms and design principles for Schottky contacts to group-III nitrides. Journal of Applied Physics 97:6.
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