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Philosophical Magazine Volume 85, 2005 - Issue 21
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Original Articles

(001) silicon surfacial grain boundaries obtained by direct wafer bonding process: accurate control of the structure before bonding

K. Rousseau * CEA/DRFMC/SP2M, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
,
J. Eymery CEA/DRFMC/SP2M, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
,
F. Fournel CEA/LET1/DTS, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
,
J.-P. Morniroli Université de Lille I, Laboratoire de Métallurgie Physique et Génie des Matérioux, UMR CNRS 8517, bâtinent C6, 59655 Villeneuve d’Ascq Cedex, France
&
J.-L. Rouvière CEA/DRFMC/SP2M, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
Pages 2415-2448 | Received 05 Sep 2004, Accepted 17 Jan 2005, Published online: 21 Feb 2007

Citations (6)

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Read on this site (1)

S. Youssef & R. Bonnet. (2007) The elastic potential energy of a thin foil deformed by an in-plane 60° dislocation. Philosophical Magazine 87:31, pages 4935-4948.
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Articles from other publishers (5)

Heiko Groiss. (2019) Dislocation Analysis in SiGe Heterostructures by Large-Angle Convergent Beam Electron Diffraction. Crystals 10:1, pages 5.
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V. I. Vdovin, E. V. Ubyivovk & O. F. Vyvenko. (2013) Regularities in the formation of dislocation networks on the boundary of bonded Si(001) wafers. Semiconductors 47:2, pages 264-268.
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Vladimir Vdovin, Oleg Vyvenko, Evgenii Ubyivovk & Oleg Kononchuk. (2011) Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers. Solid State Phenomena 178-179, pages 253-258.
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T. Wilhelm, Teimuraz Mchedlidze, X. Yu, Tzanimir ArguirovMartin Kittler & Manfred Reiche. (2007) Regular Dislocation Networks in Silicon. Part I: Structure. Solid State Phenomena 131-133, pages 571-578.
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T. Wilhelm, V. Kuhlmann & K. Scheerschmidt. (2007) Bonded semiconductor interfaces with twist and tilt rotation: TEM analysis supported by molecular dynamics structure modelling. physica status solidi c 4:8, pages 3115-3119.
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