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Philosophical Magazine Volume 86, 2006 - Issue 29-31: 50 Years of TEM of Dislocations
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Original Articles

Nitrogen doping and multiplicity of stacking faults in SiC

P. Pirouz Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, USACorrespondence[email protected]
,
M. Zhang Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, USA
,
H. McD. Hobgood Cree Inc., Durham, NC 27703, USA
,
M. Lancin Laboratoire TECSEN, Université Paul Cézanne, Aix–Marseille III, 13397 Marseille Cedex 20, France
,
J. Douin CEMES-CNRS, 31055 Toulouse Cedex 04, France
&
B. Pichaud Laboratoire TECSEN, Université Paul Cézanne, Aix–Marseille III, 13397 Marseille Cedex 20, France
Pages 4685-4697 | Received 30 Nov 2005, Accepted 03 Mar 2006, Published online: 21 Feb 2007

Citations (9)

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Read on this site (1)

M. Lancin, M. Texier, G. Regula & B. Pichaud. (2009) Defects created in N-doped 4H-SiC in the brittle regime: Stacking fault multiplicity and dislocation cores. Philosophical Magazine 89:15, pages 1251-1266.
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Articles from other publishers (8)

A. Yang, K. Murata, T. Miyazawa, T. Tawara & H. Tsuchida. (2019) Analysis of carrier lifetimes in N + B-doped n -type 4H-SiC epilayers . Journal of Applied Physics 126:5.
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Yu Yang, Jianqiu Guo, Ouloide Goue, Balaji Raghothamachar, Michael Dudley, Gil Chung, Edward Sanchez, Jeff Quast, Ian Manning & Darren Hansen. (2016) Effect of Doping Concentration Variations in PVT-Grown 4H-SiC Wafers. Journal of Electronic Materials 45:4, pages 2066-2070.
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S. I. Vlaskina. (2015) External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals. Semiconductor Physics Quantum Electronics and Optoelectronics 18:4, pages 448-451.
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Akihiko Ito, Hitoshi Kanno & Takashi Goto. (2015) 2H-SiC films grown by laser chemical vapor deposition. Journal of the European Ceramic Society 35:16, pages 4611-4615.
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Fang Zhen Wu, Huan Huan Wang, Yu Yang, Jian Qiu Guo, Balaji Raghothamachar, Michael Dudley, Stephan G. Mueller, Gil Y. Chung, Edward K. Sanchez, Darren Hansen, Mark J. Loboda, Li Hua Zhang, Dong Su, Kim Kisslinger & Eric Stach. (2015) Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC. Materials Science Forum 821-823, pages 85-89.
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S.I. Vlaskina. (2014) Nanostructures in lightly doped silicon carbide crystals with polytypic defects. Semiconductor Physics Quantum Electronics and Optoelectronics 17:2, pages 155-159.
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S.I. Vlaskina. (2013) 8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions. Semiconductor Physics Quantum Electronics and Optoelectronics 16:3, pages 273-279.
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J. Hassan, J.P. Bergman, A. Henry & E. Janzén. (2008) On-axis homoepitaxial growth on Si-face 4H–SiC substrates. Journal of Crystal Growth 310:20, pages 4424-4429.
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