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Philosophical Magazine Volume 86, 2006 - Issue 29-31: 50 Years of TEM of Dislocations
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Original Articles

Using EELS to observe composition and electronic structure variations at dislocation cores in GaN

I. Arslan# Department of Physics, University of California, 1 Shields Ave, Davis, CA 95616, USAView further author information
,
A. Bleloch UK SuperSTEM, Daresbury Laboratory, Daresbury, Cheshire WA4 4AD, UK
,
E. A. Stach School of Materials Engineering, Purdue University, West Lafayette, IN 47907, USA
,
S. Ogut Department of Physics, University of Illinois at Chicago, 845 W. Taylor St, Chicago, IL 60607, USA
&
N. D. Browning Department of Physics, University of California, 1 Shields Ave, Davis, CA 95616, USA; Department of Chemical Engineering and Materials Science, University of California, 1 Shields Ave, Davis, CA 95616, USACorrespondence[email protected]
Pages 4727-4746 | Received 28 Nov 2005, Accepted 03 Apr 2006, Published online: 21 Feb 2007

Citations (14)

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P.B. Hirsch, J.G. Lozano, S. Rhode, M.K. Horton, M.A. Moram, S. Zhang, M.J. Kappers, C.J. Humphreys, A. Yasuhara, E. Okunishi & P.D. Nellist. (2013) The dissociation of the [+ ] dislocation in GaN. Philosophical Magazine 93:28-30, pages 3925-3938.
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E.C. Cosgriff, P.D. Nellist, P.B. Hirsch, Z. Zhou & D.J.H. Cockayne. (2010) ADF STEM imaging of screw dislocations viewed end-on. Philosophical Magazine 90:33, pages 4361-4375.
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Articles from other publishers (12)

Olivia G. Licata, Scott Broderick, Emma Rocco, Fatemeh Shahedipour-Sandvik & Baishakhi Mazumder. (2021) Dopant-defect interactions in Mg-doped GaN via atom probe tomography. Applied Physics Letters 119:3.
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P. S. Vergeles, E. B. Yakimov & V. I. Orlov. (2020) Comparative Study of Optical and Electrical Properties of Grown-In and Freshly Introduced Dislocations in GaN by SEM Methods. Journal of Electronic Materials 49:9, pages 5173-5177.
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Paweł Piotr Michałowski, Sebastian Złotnik & Mariusz Rudziński. (2019) Three dimensional localization of unintentional oxygen impurities in gallium nitride. Chemical Communications 55:77, pages 11539-11542.
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Eugene B. Yakimov, Alexander Y. Polyakov, In-Hwan Lee & Stephen J. Pearton. (2018) Recombination properties of dislocations in GaN. Journal of Applied Physics 123:16.
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Jian Min Zuo & John C.H. SpenceJian Min Zuo & John C. H. Spence. 2017. Advanced Transmission Electron Microscopy. Advanced Transmission Electron Microscopy 501 552 .
S. L. Rhode, M. K. Horton, W. Y. Fu, S.-L. Sahonta, M. J. Kappers, T. J. Pennycook, C. J. Humphreys, R. O. Dusane & M. A. Moram. (2015) Dislocation core structures in Si-doped GaN. Applied Physics Letters 107:24.
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V.M. Mikoushkin. (2015) Electron impact induced collective and atomic-like single-electron Ga3d→εl excitations in GaAsN alloy. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 354, pages 100-104.
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J G Lozano, M P Guerrero-Lebrero, A Yasuhara, E Okinishi, S Zhang, C J Humphreys, P L Galindo, P B Hirsch & P D Nellist. (2014) Observation of depth-dependent atomic displacements related to dislocations in GaN by optical sectioning in the STEM. Journal of Physics: Conference Series 522, pages 012048.
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S. K. Rhode, M. K. Horton, M. J. Kappers, S. Zhang, C. J. Humphreys, R. O. Dusane, S. -L. Sahonta & M. A. Moram. (2013) Mg Doping Affects Dislocation Core Structures in GaN. Physical Review Letters 111:2.
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Patrick J. Phillips, Santino D. Carnevale, Rajan Kumar, Roberto C. Myers & Robert F. Klie. (2013) Full-Scale Characterization of UVLED Al x Ga 1– x N Nanowires via Advanced Electron Microscopy . ACS Nano 7:6, pages 5045-5051.
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Archie Howie. 2007. Turning Points in Solid-State, Materials and Surface Science. Turning Points in Solid-State, Materials and Surface Science 687 697 .
Mino Yang, Hionsuck Baik, Jaekyun Kim, Yang Soo Kim & Moonsang Lee. (2022) Partial Dislocation Climb in Nitride Semiconductors. SSRN Electronic Journal.
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