Advanced search
Publication Cover
Philosophical Magazine Volume 92, 2012 - Issue 36
Submit an article Journal homepage
391
Views
38
CrossRef citations to date
0
Altmetric
Part A: Materials Science

Analysis of contrasts and identifications of Burgers vectors for basal-plane dislocations and threading edge dislocations in 4H-SiC crystals observed by monochromatic synchrotron X-ray topography in grazing-incidence Bragg-case geometry

Hirofumi Matsuhata Advanced Power Electronics Research Centre, National Institute of Advanced Industrial Science and Technology, 1-1-1, Umezono, Tsukuba 305-8568, JapanCorrespondence[email protected]
,
Hirotaka Yamaguchi Advanced Power Electronics Research Centre, National Institute of Advanced Industrial Science and Technology, 1-1-1, Umezono, Tsukuba 305-8568, Japan
&
Toshiyuki Ohno Central Research Laboratory, Hitachi Ltd. 1-280, Higashi-Kokubunnji, Kokubunnji-shi, Tokyo 185-8601, Japan
Pages 4599-4617 | Received 04 Apr 2012, Accepted 23 Jul 2012, Published online: 28 Aug 2012

Citations (38)

Keep up to date with the latest research on this topic with citation updates for this article.

Subscribe to citation updates

Read on this site (2)

Eita Tochigi, Hirofumi Matsuhata, Hirotaka Yamaguchi, Takashi Sekiguchi, Hajime Okumura & Yuichi Ikuhara. (2017) Investigation of V-shaped extended defects in a 4H–SiC epitaxial film. Philosophical Magazine 97:9, pages 657-670.
Read now
Hirofumi Matsuhata, Hirotaka Yamaguchi, Tamotsu Yamashita, Toshiaki Tanaka, Bin Chen & Takashi Sekiguchi. (2014) Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg–Barrett X-ray topography. Philosophical Magazine 94:15, pages 1674-1685.
Read now

Articles from other publishers (36)

Shunta Harada, Taketo Nishigaki, Nobuko Kitagawa, Kotaro Ishiji, Kenji Hanada, Atsushi Tanaka & Kunihiro Morishima. (2023) Development of High-Resolution Nuclear Emulsion Plates for Synchrotron X-Ray Topography Observation of Large-Size Semiconductor Wafers. Journal of Electronic Materials 52:5, pages 2951-2956.
Crossref
Shunta Harada, Hitoshi Sakane, Toshiki Mii & Masashi Kato. (2023) Suppression of partial dislocation glide motion during contraction of stacking faults in SiC epitaxial layers by hydrogen ion implantation. Applied Physics Express 16:2, pages 021001.
Crossref
Kotaro Ishiji, Takashi Fujii, Tsutomu Araki, Yuji Shiraishi & Tsuguo Fukuda. (2023) Defect generation behavior in Czochralski-grown ScAlMgO4 crystal using synchrotron X-ray topography. Journal of Crystal Growth 603, pages 126984.
Crossref
Yongzhao Yao, Keiichi Hirano, Yoshihiro Sugawara & Yukari Ishikawa. (2022) Domain boundaries in ScAlMgO 4 single crystal observed by synchrotron radiation x-ray topography and reticulography . Semiconductor Science and Technology 37:11, pages 115009.
Crossref
Shunta Harada, Toshiki Mii, Hitoshi Sakane & Masashi Kato. (2022) Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation. Scientific Reports 12:1.
Crossref
Hong Yu Peng, Ze Yu Chen, Ya Fei Liu, Qian Yu Cheng, Shan Shan Hu, Xian Rong Huang, Lahsen Assoufid, Balaji Raghothamachar & Michael Dudley. (2022) Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography. Materials Science Forum 1062, pages 356-360.
Crossref
Kotaro Ishiji, Masashi Kato & Ryuichi Sugie. (2022) Characterization of Defect Structure in Epilayer Grown on On-Axis SiC by Synchrotron X-ray Topography. Journal of Electronic Materials 51:4, pages 1541-1547.
Crossref
Yongzhao Yao, Keiichi Hirano, Hirotaka Yamaguchi, Yoshihiro Sugawara, Narihito Okada, Kazuyuki Tadatomo & Yukari Ishikawa. (2022) A synchrotron X-ray topography study of crystallographic defects in ScAlMgO4 single crystals. Journal of Alloys and Compounds 896, pages 163025.
Crossref
Hongyu Peng, Tuerxun Ailihumaer, Yafei Liu, Balaji Raghotharmachar, Xianrong Huang, Lahsen Assoufid & Michael Dudley. (2021) Dislocation contrast on X-ray topographs under weak diffraction conditions. Journal of Applied Crystallography 54:4, pages 1225-1233.
Crossref
Fumihiro Fujie, Hongyu Peng, Tuerxun Ailihumaer, Balaji Raghothamachar, Michael Dudley, Shunta Harada, Miho Tagawa & Toru Ujihara. (2021) Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC. Acta Materialia 208, pages 116746.
Crossref
Tsunenobu Kimoto & Heiji Watanabe. (2020) Defect engineering in SiC technology for high-voltage power devices. Applied Physics Express 13:12, pages 120101.
Crossref
Yongzhao Yao, Yukari Ishikawa & Yoshihiro Sugawara. (2020) Dislocation classification of a large-area β-Ga2O3 single crystal via contrast analysis of affine-transformed X-ray topographs. Journal of Crystal Growth 548, pages 125825.
Crossref
Yongzhao Yao, Yoshihiro Sugawara, Yukari Ishikawa, Narihito Okada & Kazuyuki Tadatomo. (2020) Crystallinity Evaluation and Dislocation Observation for an Aluminum Nitride Single-Crystal Substrate on a Wafer Scale. Journal of Electronic Materials 49:9, pages 5144-5153.
Crossref
Hirofumi MATSUHATA & Takashi SEKIGUCHI. (2020) Analysis on the Shapes of the Shockley type Stacking Faults Generated by the REDG Effect in the 4H-SiC Power Devices4H-SiC電力素子中でのREDG効果により成長したShockley型積層欠陥の形状についての解析. Nihon Kessho Gakkaishi 62:3, pages 150-157.
Crossref
Fumihiro Fujie, Shunta Harada, Kenji Hanada, Hiromasa Suo, Haruhiko Koizumi, Tomohisa Kato, Miho Tagawa & Toru Ujihara. (2020) Temperature dependence of double Shockley stacking fault behavior in nitrogen-doped 4H-SiC studied by in-situ synchrotron X-ray topography. Acta Materialia 194, pages 387-393.
Crossref
Yongzhao Yao, Yoshihiro Sugawara & Yukari Ishikawa. (2020) Identification of Burgers vectors of dislocations in monoclinic β-Ga2O3 via synchrotron x-ray topography. Journal of Applied Physics 127:20.
Crossref
X.F. Liu, G.G. Yan, L. Sang, Y.X. Niu, Y.W. He, Z.W. Shen, Z.X. Wen, J. Chen, W.S. Zhao, L. Wang, M. Guan, F. Zhang, G.S. Sun & Y.P. Zeng. (2020) Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching. Journal of Crystal Growth 531, pages 125359.
Crossref
Satoshi Yamaguchi, Naotaka Naganawa & Mitsuhiro Nakamura. (2019) High-resolution X-ray topography of threading edge dislocations in 4H-SiC using a novel nuclear emulsion film improved special resolution and sensitivity. Japanese Journal of Applied Physics 58:6, pages 060901.
Crossref
Yongzhao Yao, Yoshihiro Sugawara, Yukari Ishikawa, Narihito Okada, Kazuyuki Tadatomo, Yumiko Takahashi & Keiichi Hirano. (2019) Observation of dislocations and their arrays in physical vapor transport-grown AlN single-crystal substrate by synchrotron X-ray topography. Japanese Journal of Applied Physics 58:SC, pages SCCB29.
Crossref
Shohei Hayashi, Tamotsu Yamashita, Junji Senzaki, Tomohisa Kato, Yoshiyuki Yonezawa, Kazutoshi Kojima & Hajime Okumura. (2019) Relationship between depth of basal-plane dislocations and expanded stacking faults by application of forward current to 4H–SiC p-i-n diodes. Applied Physics Express 12:5, pages 051007.
Crossref
Shohei Hayashi, Tamotsu Yamashita, Masaki Miyazato, Masaaki Miyajima, Junji Senzaki, Tomohisa Kato, Yoshiyuki Yonezawa, Kazutoshi Kojima & Hajime Okumura. (2019) Structural analysis of interfacial dislocations and expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes. Japanese Journal of Applied Physics 58:1, pages 011005.
Crossref
Kazuhisa Sato & Hidehiro Yasuda. (2018) Probing Crystal Dislocations in a Micrometer-Thick GaN Film by Modern High-Voltage Electron Microscopy. ACS Omega 3:10, pages 13524-13529.
Crossref
Shohei Hayashi, Tamotsu Yamashita, Junji Senzaki, Masaki Miyazato, Mina Ryo, Masaaki Miyajima, Tomohisa Kato, Yoshiyuki Yonezawa, Kazutoshi Kojima & Hajime Okumura. (2018) Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes. Japanese Journal of Applied Physics 57:4S, pages 04FR07.
Crossref
Kotaro Ishiji, Seiji Kawado, Yasuharu Hirai & Shinji Nagamachi. (2017) Determination of observable depth of dislocations in 4H-SiC by X-ray topography in back reflection. Japanese Journal of Applied Physics 56:10, pages 106601.
Crossref
Kazuhisa Sato, Yuki Yamashita, Hidehiro Yasuda & Hirotaro Mori. (2017) Maximum usable thickness revisited: Imaging dislocations in Si by modern high-voltage scanning transmission electron microscopy. Japanese Journal of Applied Physics 56:10, pages 100304.
Crossref
Shohei Hayashi, Takanori Naijo, Tamotsu Yamashita, Masaki Miyazato, Mina Ryo, Hiroyuki Fujisawa, Masaaki Miyajima, Junji Senzaki, Tomohisa Kato, Yoshiyuki Yonezawa, Kazutoshi Kojima & Hajime Okumura. (2017) Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p–i–n diodes. Applied Physics Express 10:8, pages 081201.
Crossref
Y. Tokuda, T. Yamashita, I. Kamata, T. Naijo, T. Miyazawa, S. Hayashi, N. Hoshino, T. Kato, H. Okumura, T. Kimoto & H. Tsuchida. (2017) Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing. Journal of Applied Physics 122:4.
Crossref
Y. Tokuda, I. Kamata, N. Hoshino, T. Kato, H. Okumura, T. Kimoto & H. Tsuchida. (2017) Observation of double Shockley stacking fault expansion in heavily-nitrogen-doped 4H-SiC using PL technique. Journal of Crystal Growth 468, pages 889-893.
Crossref
Hirofumi Matsuhata, Naoyuki Sugiyama, Bin Chen, Tamotsu Yamashita, Tetsuo Hatakeyama & Takashi Sekiguchi. (2016) Surface defects generated by intrinsic origins on 4H-SiC epitaxial wafers observed by scanning electron microscopy. Microscopy.
Crossref
HIROHUMI MATSUHATA, HIROTAKA YAMAGUCHI, TAKASHI SEKIGUCHI, BIN CHEN, MASAYUKI SASAKI, TOSHIYUKI OHNO, TAKUMA SUZUKI, TETSUO HATAKEYAMA, TAKASHI TSUJI, YOSHIYUKI YONEZAWA & KAZUO ARAI. (2016) Analysis of Dislocation Structures in 4H-SiC by Synchrotron X-Ray Topography. Electrical Engineering in Japan 197:3, pages 3-17.
Crossref
Hideki Sako, Hirofumi Matsuhata, Masayuki Sasaki, Masatake Nagaya, Takanori Kido, Kenji Kawata, Tomohisa Kato, Junji Senzaki, Makoto Kitabatake & Hajime Okumura. (2016) Micro-structural analysis of local damage introduced in subsurface regions of 4H-SiC wafers during chemo-mechanical polishing. Journal of Applied Physics 119:13.
Crossref
Atsushi Tanaka, Hirofumi Matsuhata, Naoyuki Kawabata, Daisuke Mori, Kei Inoue, Mina Ryo, Takumi Fujimoto, Takeshi Tawara, Masaki Miyazato, Masaaki Miyajima, Kenji Fukuda, Akihiro Ohtsuki, Tomohisa Kato, Hidekazu Tsuchida, Yoshiyuki Yonezawa & Tsunenobu Kimoto. (2016) Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes. Journal of Applied Physics 119:9.
Crossref
Masayuki Sasaki, Hirofumi Matsuhata, Kentaro Tamura, Hideki Sako, Kazutoshi Kojima, Hirotaka Yamaguchi & Makoto Kitabatake. (2015) Synchrotron X-ray topography analysis of local damage occurring during polishing of 4H-SiC wafers. Japanese Journal of Applied Physics 54:9, pages 091301.
Crossref
Hirofumi Matsuhata & Hirotaka Yamaguchi. (2015) Observation of Dislocations by Synchrotron Berg-Barrett X-ray Topography. Materia Japan 54:6, pages 279-285.
Crossref
Hiroyasu Saka, Hiroki Watanabe, Yasuo Kitou, Hiroyuki Kondo, Fusao Hirose & Shoichi Onda. (2014) Inclination of a threading dislocation in an epilayer of 4H-SiC. Japanese Journal of Applied Physics 53:11, pages 111302.
Crossref
Hideki Sako, Tamotsu Yamashita, Naoyuki Sugiyama, Junichiro Sameshima, Osamu Ishiyama, Kentaro Tamura, Junji Senzaki, Hirofumi Matsuhata, Makoto Kitabatake & Hajime Okumura. (2014) Characterization of scraper-shaped defects on 4H-SiC epitaxial film surfaces. Japanese Journal of Applied Physics 53:5, pages 051301.
Crossref

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Order Reprints Request Corporate Permissions

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

Request Academic Permissions

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.

Related research

People also read lists articles that other readers of this article have read.

Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.

Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.