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Philosophical Magazine Volume 94, 2014 - Issue 15
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Part A: Materials Science

Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg–Barrett X-ray topography

Hirofumi MatsuhataAdvanced Power Electronics Research Centre, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki305-8568, Japan;R&D Partnership Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki305-8569, JapanCorrespondence[email protected]
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Hirotaka YamaguchiAdvanced Power Electronics Research Centre, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki305-8568, Japan;R&D Partnership Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki305-8569, Japan
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Tamotsu YamashitaR&D Partnership Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki305-8569, Japan;Showa Denko K. K., 1-13-9 Shibadaimon, Minato-ku, Tokyo105-8518, Japan
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Toshiaki TanakaR&D Partnership Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki305-8569, Japan;Central Research Laboratory, Hitachi Ltd., 1-280 Koigakubo, Kokubunji, Tokyo185-8601, Japan
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Bin ChenR&D Partnership Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki305-8569, Japan;International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
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Takashi SekiguchiR&D Partnership Future Power Electronics Technology, 16-1 Onogawa, Tsukuba, Ibaraki305-8569, Japan;International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
Pages 1674-1685 | Received 30 Mar 2013, Accepted 09 Feb 2014, Published online: 14 Apr 2014

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Hirofumi Matsuhata & Takashi Sekiguchi. (2018) Morphology of single Shockley-type stacking faults generated by recombination enhanced dislocation glide in 4H–SiC. Philosophical Magazine 98:10, pages 878-898.
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Akifumi Iijima, Isaho Kamata, Hidekazu Tsuchida, Jun Suda & Tsunenobu Kimoto. (2017) Correlation between shapes of Shockley stacking faults and structures of basal plane dislocations in 4H-SiC epilayers. Philosophical Magazine 97:30, pages 2736-2752.
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Eita Tochigi, Hirofumi Matsuhata, Hirotaka Yamaguchi, Takashi Sekiguchi, Hajime Okumura & Yuichi Ikuhara. (2017) Investigation of V-shaped extended defects in a 4H–SiC epitaxial film. Philosophical Magazine 97:9, pages 657-670.
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Articles from other publishers (31)

Chiharu Ota, Johji Nishio, Aoi Okada & Ryosuke Iijima. (2023) Stacking Fault Expansion from an Interfacial Dislocation in a 4H-SiC PIN Diode and Its Expansion Process. Journal of Electronic Materials 52:8, pages 5109-5120.
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Johji Nishio, Chiharu Ota & Ryosuke Iijima. (2023) Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers. Journal of Electronic Materials 52:8, pages 5084-5092.
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Johji Nishio, Chiharu Ota & Ryosuke Iijima. (2022) Partial dislocation structures at expansion terminating areas of bar-shaped single Shockley-type stacking faults and basal plane dislocations at the origin in 4H-SiC. Japanese Journal of Applied Physics 62:SC, pages SC1001.
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Kotaro Ishiji, Takashi Fujii, Tsutomu Araki, Yuji Shiraishi & Tsuguo Fukuda. (2023) Defect generation behavior in Czochralski-grown ScAlMgO4 crystal using synchrotron X-ray topography. Journal of Crystal Growth 603, pages 126984.
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Johji Nishio, Chiharu Ota & Ryosuke Iijima. (2022) Origin of Double-Rhombic Single Shockley Stacking Faults in 4H-SiC Epitaxial Layers. Journal of Electronic Materials 52:1, pages 679-690.
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Johji Nishio, Chiharu Ota & Ryosuke Iijima. (2022) Structural study of single Shockley stacking faults terminated near substrate/epilayer interface in 4H-SiC. Japanese Journal of Applied Physics 61:SC, pages SC1005.
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Chiharu Ota, Johji Nishio, Aoi Okada & Ryosuke Iijima. (2021) Origin and Generation Process of a Triangular Single Shockley Stacking Fault Expanding from the Surface Side in 4H-SiC PIN Diodes. Journal of Electronic Materials 50:11, pages 6504-6511.
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J. Nishio, C. Ota & R. Iijima. (2021) Conversion of Shockley partial dislocation pairs from unexpandable to expandable combinations after epitaxial growth of 4H-SiC. Journal of Applied Physics 130:7.
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Johji Nishio, Aoi Okada, Chiharu Ota & Ryosuke Iijima. (2020) Single Shockley stacking fault expansion from immobile basal plane dislocations in 4H-SiC. Japanese Journal of Applied Physics 60:SB, pages SBBD01.
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V. V. Lider. (2021) X-Ray Diffraction Topography Methods (Review). Physics of the Solid State 63:2, pages 189-214.
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Yongzhao Yao, Yoshihiro Sugawara, Yukari Ishikawa & Keiichi Hirano. (2021) X-ray topography of crystallographic defects in wide-bandgap semiconductors using a high-resolution digital camera. Japanese Journal of Applied Physics 60:1, pages 010908.
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Tsunenobu Kimoto & Heiji Watanabe. (2020) Defect engineering in SiC technology for high-voltage power devices. Applied Physics Express 13:12, pages 120101.
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Yongzhao Yao, Yukari Ishikawa & Yoshihiro Sugawara. (2020) Dislocation classification of a large-area β-Ga2O3 single crystal via contrast analysis of affine-transformed X-ray topographs. Journal of Crystal Growth 548, pages 125825.
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Johji Nishio, Aoi Okada, Chiharu Ota & Mitsuhiro Kushibe. (2020) Triangular Single Shockley Stacking Fault Analyses on 4H-SiC PiN Diode with Forward Voltage Degradation. Journal of Electronic Materials 49:9, pages 5232-5239.
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Hirofumi MATSUHATA & Takashi SEKIGUCHI. (2020) Analysis on the Shapes of the Shockley type Stacking Faults Generated by the REDG Effect in the 4H-SiC Power Devices4H-SiC電力素子中でのREDG効果により成長したShockley型積層欠陥の形状についての解析. Nihon Kessho Gakkaishi 62:3, pages 150-157.
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J. Nishio, A. Okada, C. Ota & R. Iijima. (2020) Direct confirmation of structural differences in single Shockley stacking faults expanding from different origins in 4H-SiC PiN diodes. Journal of Applied Physics 128:8.
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Yongzhao Yao, Yoshihiro Sugawara & Yukari Ishikawa. (2020) Identification of Burgers vectors of dislocations in monoclinic β-Ga2O3 via synchrotron x-ray topography. Journal of Applied Physics 127:20.
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Kana Shimada, Kanta Asada, Mikako Yodo & Noboru Ohtani. (2020) Raman scattering microscopy imaging of basal plane stacking faults and associated partial dislocations in 4H-SiC crystals. Journal of Applied Physics 127:16.
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Yongzhao Yao, Yoshihiro Sugawara & Yukari Ishikawa. (2020) Observation of dislocations in β -Ga 2 O 3 single-crystal substrates by synchrotron X-ray topography, chemical etching, and transmission electron microscopy . Japanese Journal of Applied Physics 59:4, pages 045502.
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Yongzhao Yao, Yukari Ishikawa & Yoshihiro Sugawara. (2019) Revelation of Dislocations in β‐Ga 2 O 3 Substrates Grown by Edge‐Defined Film‐Fed Growth . physica status solidi (a) 217:3, pages 1900630.
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Shohei Hayashi, Tamotsu Yamashita, Junji Senzaki, Tomohisa Kato, Yoshiyuki Yonezawa, Kazutoshi Kojima & Hajime Okumura. (2019) Relationship between depth of basal-plane dislocations and expanded stacking faults by application of forward current to 4H–SiC p-i-n diodes. Applied Physics Express 12:5, pages 051007.
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Shohei Hayashi, Tamotsu Yamashita, Masaki Miyazato, Masaaki Miyajima, Junji Senzaki, Tomohisa Kato, Yoshiyuki Yonezawa, Kazutoshi Kojima & Hajime Okumura. (2019) Structural analysis of interfacial dislocations and expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes. Japanese Journal of Applied Physics 58:1, pages 011005.
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Fumihiro Fujie, Shunta Harada, Haruhiko Koizumi, Kenta Murayama, Kenji Hanada, Miho Tagawa & Toru Ujihara. (2018) Direct observation of stacking fault shrinkage in 4H-SiC at high temperatures by in-situ X-ray topography using monochromatic synchrotron radiation . Applied Physics Letters 113:1.
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Shohei Hayashi, Tamotsu Yamashita, Junji Senzaki, Masaki Miyazato, Mina Ryo, Masaaki Miyajima, Tomohisa Kato, Yoshiyuki Yonezawa, Kazutoshi Kojima & Hajime Okumura. (2018) Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes. Japanese Journal of Applied Physics 57:4S, pages 04FR07.
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Shohei Hayashi, Takanori Naijo, Tamotsu Yamashita, Masaki Miyazato, Mina Ryo, Hiroyuki Fujisawa, Masaaki Miyajima, Junji Senzaki, Tomohisa Kato, Yoshiyuki Yonezawa, Kazutoshi Kojima & Hajime Okumura. (2017) Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p–i–n diodes. Applied Physics Express 10:8, pages 081201.
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Y. Tokuda, T. Yamashita, I. Kamata, T. Naijo, T. Miyazawa, S. Hayashi, N. Hoshino, T. Kato, H. Okumura, T. Kimoto & H. Tsuchida. (2017) Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing. Journal of Applied Physics 122:4.
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T. Kimoto, A. Iijima, H. Tsuchida, T. Miyazawa, T. Tawara, A. Otsuki, T. Kato & Y. Yonezawa. (2017) Understanding and reduction of degradation phenomena in SiC power devices. Understanding and reduction of degradation phenomena in SiC power devices.
HIROHUMI MATSUHATA, HIROTAKA YAMAGUCHI, TAKASHI SEKIGUCHI, BIN CHEN, MASAYUKI SASAKI, TOSHIYUKI OHNO, TAKUMA SUZUKI, TETSUO HATAKEYAMA, TAKASHI TSUJI, YOSHIYUKI YONEZAWA & KAZUO ARAI. (2016) Analysis of Dislocation Structures in 4H-SiC by Synchrotron X-Ray Topography. Electrical Engineering in Japan 197:3, pages 3-17.
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Atsushi Tanaka, Hirofumi Matsuhata, Naoyuki Kawabata, Daisuke Mori, Kei Inoue, Mina Ryo, Takumi Fujimoto, Takeshi Tawara, Masaki Miyazato, Masaaki Miyajima, Kenji Fukuda, Akihiro Ohtsuki, Tomohisa Kato, Hidekazu Tsuchida, Yoshiyuki Yonezawa & Tsunenobu Kimoto. (2016) Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes. Journal of Applied Physics 119:9.
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Masayuki Sasaki, Hirofumi Matsuhata, Kentaro Tamura, Hideki Sako, Kazutoshi Kojima, Hirotaka Yamaguchi & Makoto Kitabatake. (2015) Synchrotron X-ray topography analysis of local damage occurring during polishing of 4H-SiC wafers. Japanese Journal of Applied Physics 54:9, pages 091301.
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Hirofumi Matsuhata & Hirotaka Yamaguchi. (2015) Observation of Dislocations by Synchrotron Berg-Barrett X-ray Topography. Materia Japan 54:6, pages 279-285.
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