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Part A: Materials Science

Investigation on the non-ideal behaviour of Au/n-InP Schottky diodes by the simulation of I–V–T and C–V–T characteristics

A. FritahLaboratory of Metallic and Semiconducting Materials (LMSM), Faculty of Sciences and Technology, Department of Electrical Engineering, Biskra University, Biskra, AlgeriaCorrespondence[email protected]

A. SaadouneLaboratory of Metallic and Semiconducting Materials (LMSM), Faculty of Sciences and Technology, Department of Electrical Engineering, Biskra University, Biskra, Algeria

L. DehimiLaboratory of Metallic and Semiconducting Materials (LMSM), Faculty of Sciences and Technology, Department of Electrical Engineering, Biskra University, Biskra, Algeria;Faculty of Science, Elhadj Lakhdar University, Batna, Algeria

B. AbayFaculty of Science, Department of Physics, Atatürk University, Erzurum, Turkey

Pages 2009-2026 | Received 11 Jan 2016, Accepted 27 Apr 2016, Published online: 26 May 2016

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https://doi.org/10.1080/14786435.2016.1185184
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E. Aldirmaz, M. Güler & E. Güler. (2022) Illumination intensities effect on electronic properties of Fe–Ni–Mn/p-Si Schottky diode. Journal of Materials Science: Materials in Electronics 33:7, pages 4132-4144.
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Ilknur Gumus & Sakir Aydogan. (2021) The electrical and dielectric properties of the magnetite nanoparticles supported graphene-oxide/n-Si MOS type device that operates across a wide temperature range. Sensors and Actuators A: Physical 331, pages 112989.
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O Polat, M Coskun, H Efeoglu, M Caglar, F M Coskun, Y Caglar & A Turut. (2020) The temperature induced current transport characteristics in the orthoferrite YbFeO 3− δ thin film/p-type Si structure . Journal of Physics: Condensed Matter 33:3, pages 035704.
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Şükrü KARATAŞ. (2020) Temperature and voltage dependence C–V and G/ω–V characteristics in Au/n-type GaAs metal–semiconductor structures and the source of negative capacitance. Journal of Materials Science: Materials in Electronics 32:1, pages 707-716.
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Sadoun Ali, Mansouri Sedik, Chellali Mohammed, Lakhdar Nacereddine, Hima Abdelkader & Benamara Zineb. (2020) Hafnium dioxide effect on the electrical properties of M/n-GaN structure. Materials Science-Poland 38:1, pages 165-173.
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A. Sadoun, S. Mansouri, M. Chellali, N. Lakhdar, A. Hima & Z. Benamara. (2019) Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation. Materials Science-Poland 37:3, pages 496-502.
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A. Fritah, L. Dehimi, F. Pezzimenti, A. Saadoune & B. Abay. (2019) Analysis of I–V–T Characteristics of Au/n-InP Schottky Barrier Diodes with Modeling of Nanometer-Sized Patches at Low Temperature. Journal of Electronic Materials 48:6, pages 3692-3698.
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Abdallah Fritah, Lakhder Dehimi, Achour Saadoune & Khaled Bekhouche. (2018) Traps effect on the I-V-T characteristics of Au/n-InP Schottky barrier diode. Traps effect on the I-V-T characteristics of Au/n-InP Schottky barrier diode.

S. Zellag, L. Dehimi, T. Asar, A. Saadoune, A. Fritah & S. Özçelik. (2018) Effects of the TiO2 high-k insulator material on the electrical characteristics of GaAs based Schottky barrier diodes. Applied Physics A 124:1.
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KADIR EJDERHA, SEZAI ASUBAY, NEZIR YILDIRIM, ÖMER GÜLLÜ, ABDULMECIT TURUT & BAHATTIN ABAY. (2016) THE CHARACTERISTIC DIODE PARAMETERS IN Ti/p-InP CONTACTS PREPARED BY DC SPUTTERING AND EVAPORATION PROCESSES OVER A WIDE MEASUREMENT TEMPERATURE. Surface Review and Letters 24:04, pages 1750052.
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Investigation on the non-ideal behaviour of Au/n-InP Schottky diodes by the simulation of I–V–T and C–V–T characteristics

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Investigation on the non-ideal behaviour of Au/n-InP Schottky diodes by the simulation of I–V–T and C–V–T characteristics

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