The effect of in-doping on the quantum information entropy of hydrogenic impurity states in the In_xGa_1-xN semiconductor quantum dot

Xue LiuSchool of Physics and Optoelectronic Engineering, Ludong University, Yantai, People’s Republic of ChinaView further author information

Xin-yu XieSchool of Physics and Optoelectronic Engineering, Ludong University, Yantai, People’s Republic of ChinaView further author information

De-hua WangSchool of Physics and Optoelectronic Engineering, Ludong University, Yantai, People’s Republic of ChinaCorrespondence[email protected]
View further author information

Chen-lu WangSchool of Physics and Optoelectronic Engineering, Ludong University, Yantai, People’s Republic of ChinaView further author information

Yu-lin ZhaoSchool of Physics and Optoelectronic Engineering, Ludong University, Yantai, People’s Republic of ChinaView further author information

Shu-fang ZhangSchool of Physics and Optoelectronic Engineering, Ludong University, Yantai, People’s Republic of ChinaView further author information

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The effect of in-doping on the quantum information entropy of hydrogenic impurity states in the In_xGa_1-xN semiconductor quantum dot

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The effect of in-doping on the quantum information entropy of hydrogenic impurity states in the InxGa1-xN semiconductor quantum dot

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The effect of in-doping on the quantum information entropy of hydrogenic impurity states in the In_xGa_1-xN semiconductor quantum dot