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The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics
Series 8
Volume 27, 1973 - Issue 6
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Original Articles

The dynamic observation of the formation of defects in silicon under electron and proton irradiation

M. D. Matthews Metallurgy Department, Building 393, A.E.R.E., Harwell, Didcot, Berks., England
&
S. J. Ashby Metallurgy Department, Building 393, A.E.R.E., Harwell, Didcot, Berks., England
Pages 1313-1322 | Received 04 Dec 1972, Published online: 20 Aug 2006

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K. Nakai, K. Hamada, Y. Satoh & T. Yoshiie. (2011) Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation. Philosophical Magazine 91:3, pages 421-436.
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H. Hashimoto, M. Kuwabara, Y. Takai, S. Tsubokawa & Y. Makita. (1999) Direct observation of dynamic behaviour of atomic defects. Radiation Effects and Defects in Solids 148:1-4, pages 161-179.
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S. Takeda, M. Kohyama & K. Ibe. (1994) Interstitial defects on {′113} in Si and Ge Line defect configuration incorporated with a self-interstitial atom chain. Philosophical Magazine A 70:2, pages 287-312.
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Cor Claeys & Jan Vanhellemont. (1994) Radiation effects in bulk silicon. Radiation Effects and Defects in Solids 127:3-4, pages 267-293.
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A.I. Guldamashivli, R.N. Kutelia & M.I. Sadagashvili. (1993) Semiconductor amorphization during irradiation with various particles. Radiation Effects and Defects in Solids 125:1-3, pages 185-196.
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F. Corticelli, G. Lulli & P. G. Merli. (1990) Solid-phase epitaxy of implanted silicon at liquid nitrogen and room temperature induced by electron irradiation in the electron microscope. Philosophical Magazine Letters 61:3, pages 101-106.
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X.W. Lin, J. Koike, D.N. Seidman & P.R. Okamoto. (1989) Amorphization of Ge/Al or Si/Al bilayer specimens induced by 1 MeV electron irradiation at 10 K. Philosophical Magazine Letters 60:5, pages 233-240.
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F. Reynaud & B. Legros-de Mauduit. (1985) Studies of the dislocation loops produced in III–V semiconducting compounds of B3 structure by irradiation in a high voltage electron microscope. Radiation Effects 88:1-2, pages 1-16.
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O.W. Holland, D. Fathy, J. Narayan & O.S. Oen. (1985) Dose rate dependence of damage clustering during heavy ion irradiation in Si. Radiation Effects 90:1-2, pages 127-139.
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T. Yoshiie, H. Iwanaga, N. Shibata, K. Suzuki, M. Ichihara & S. Takeuchi. (1983) Irradiation damage of II–VI compounds in a high-voltage electron microscope. Philosophical Magazine A 47:3, pages 315-329.
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K.L. Rusbridge. (1983) Amorphisation of ge precipitates in an al-ge alloy by electron bombardment. Radiation Effects 69:3-4, pages 277-291.
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B. Legros-De Mauduit, A. Lasserre & F. Reynaud. (1982) Détermination par microscopie electronique de la nature des boucles de dislocation créées par irradiation electronique (2 mv) entre 200 et 350°c dans des monocristaux ďinp (structure b3). Radiation Effects 62:1-2, pages 111-115.
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T.Y. Tan, H. Föll & S.M. Hu. (1981) On the diamond-cubic to hexagonal phase transformation in silicon. Philosophical Magazine A 44:1, pages 127-140.
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T.Y. Tan. (1981) Atomic modelling of homogeneous nucleation of dislocations from condensation of point defects in silicon. Philosophical Magazine A 44:1, pages 101-125.
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L.M. Brown & D. Fathy. (1981) Electron-irradiation studies of p–n junctions in silicon bipolar transistors. Philosophical Magazine B 43:4, pages 715-732.
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I.C. Salisbury & M.H. Loretto. (1981) Radiation damage in silicon. Radiation Effects 59:1-2, pages 59-68.
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V.V. Kalinin, A.L. Aseyev, N.N. Gerasimenko, V.I. Obodnikov & S.I. Stenin. (1980) The formation of defects in Si under the radiation enhanced diffusion conditions. Radiation Effects 48:1-4, pages 13-17.
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I.G. Salisbury & M.H. Loretto. (1979) {113} Loops in electron-irradiated silicon. Philosophical Magazine A 39:3, pages 317-323.
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S.I. Romanov & L.S. Smirnov. (1978) Voids in ion-implanted silicon. Radiation Effects 37:1-2, pages 121-126.
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R.S. Nelson. (1977) A model for the build-up of disordered material in ion bombarded Si. Radiation Effects 32:1-2, pages 19-24.
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C.A. Ferreira Lima & A. Howie. (1976) Defects in electron-irradiated germanium. The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics 34:6, pages 1057-1071.
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G.S. Woods. (1976) Electron microscopy of ‘giant’ platelets on cube planes in diamond. The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics 34:6, pages 993-1012.
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HeinerJ. Pabst. (1975) Ionization effects on damage yield in ion irradiation of semiconductors. Radiation Effects 25:4, pages 279-281.
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S. Charnvanichborikarn, J. Wong-Leung, C. Jagadish & J. S. Williams. (2012) Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon. MRS Communications 2:3, pages 101-105.
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S. K. Estreicher, M. Gharaibeh, P. A. Fedders & Pablo Ordejón. (2001) Unexpected Dynamics for Self-Interstitial Clusters in Silicon. Physical Review Letters 86:7, pages 1247-1250.
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J. Wong-Leung, S. Fatima, C. Jagadish, J. D. Fitz Gerald, C. T. Chou, J. Zou & D. J. H. Cockayne. (2000) Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon. Journal of Applied Physics 88:3, pages 1312-1318.
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Jeongnim Kim, Florian Kirchhoff, Wilfried G. Aulbur, John W. Wilkins, Furrukh S. Khan & Georg Kresse. (1999) Thermally Activated Reorientation of Di-interstitial Defects in Silicon. Physical Review Letters 83:10, pages 1990-1993.
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