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Publication Cover
The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics
Series 8
Volume 27, 1973 - Issue 2
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Original Articles

Impurity effects on the structure of amorphous silicon and germanium prepared in various ways

S. C. Moss Energy Conversion Devices, Inc., Troy, Michigan, 48084, U.S.A.; Department of Physics, University of Houston, Cullen Boulevard, Houston, Texas 77004, U.S.A
,
P. Flynn Energy Conversion Devices, Inc., Troy, Michigan, 48084, U.S.A.
&
L.-O. Bauer Hughes Research Laboratories, Newport Beach, California, 92663, U.S.A.
Pages 441-456 | Received 03 Jun 1972, Published online: 20 Aug 2006

Citations (18)

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Read on this site (3)

G.A.N. Connell, R.J. Temkin & W. Paul. (1973) Amorphous germanium III. Optical properties. Advances in Physics 22:5, pages 643-665.
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R.J. Temkin, W. Paul & G.A.N. Connell. (1973) Amorphous germanium II. Structural properties. Advances in Physics 22:5, pages 581-641.
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W. Paul, G.A.N. Connell & R.J. Temkin. (1973) Amorphous germanium I. A model for the structural and optical properties. Advances in Physics 22:5, pages 531-580.
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Articles from other publishers (15)

Toshio Okabe & Masayuki Nakagawa. (1986) Crystallization behavior and local order of amorphous GexTe1 − x films. Journal of Non-Crystalline Solids 88:2-3, pages 182-195.
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H. Windischmann, J. M. Cavese, R. W. Collins, R. D. Harris & J. Gonzalez-Hernandez. (2011) The Structure of Si and Ge Deposited by Ion Beam Sputtering. MRS Proceedings 47.
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F. A. S. Al-Ramadhan, K. I. Arshak & C. A. Hogarth. (1984) Correlation between electron spin resonance, electrical conductivity and optical absorption edge of co-evaporated thin films of the dielectric system SiO/V2O5. Journal of Materials Science 19:11, pages 3687-3691.
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N.G. Nakhodkin, A.F. Bardamid & A.I. Novoselskaya. (1984) Effects of the angle of deposition on short-range order in amorphous germanium. Thin Solid Films 112:3, pages 267-277.
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J.F. Graczyk. (1980) The effects of oxygen and copper impurities on the structure of amorphous germanium. Thin Solid Films 70:2, pages 303-309.
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P. B. Barna, Á. Barna & Z. Paál. (1980) Surface chemical phenomena influencing the growth of thin films. Acta Physica Academiae Scientiarum Hungaricae 49:1-3, pages 77-85.
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K. C. Thompson-Russell & J. W. EdingtonK. C. Thompson-Russell & J. W. Edington. 1977. Electron Microscope Specimen Preparation Techniques in Materials Science. Electron Microscope Specimen Preparation Techniques in Materials Science 1 136 .
Victor E. Henrich & John C. C. Fan. (1975) Auger spectroscopy studies of the oxidation of amorphous and crystalline germanium. Journal of Applied Physics 46:3, pages 1206-1213.
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S. Koc, M. Závětová & J. Zemek. (1975) Physical properties of amorphous Si: The role of annealing. Czechoslovak Journal of Physics 25:1, pages 83-90.
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David Adler. 1975. Defects in Solids. Defects in Solids 237 332 .
John C. C. Fan & Victor E. Henrich. (1974) Oxidation studies of amorphous and crystalline germanium films by Auger spectroscopy. Applied Physics Letters 25:7, pages 401-403.
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R. Grigorovici. 1974. Amorphous and Liquid Semiconductors. Amorphous and Liquid Semiconductors 45 99 .
F.C. Weinstein & E.A. Davis. (1973) On the structure of amorphous germanium and silicon. Journal of Non-Crystalline Solids 13:1, pages 153-163.
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B.E. Watts. (1973) The preparation and properties of elemental semiconductor thin films. Thin Solid Films 18:1, pages 1-23.
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T. Satow. (1973) Structure change of amorphous germanium in the annealing process. Physica Status Solidi (a) 18:2, pages K147-K150.
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