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Publication Cover
The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics
Series 8
Volume 29, 1974 - Issue 2
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Original Articles

Deformation studies of initially dislocation-free copper single crystals. I. constant strain-rate tensile tests

K. Kamada Department of Metallurgy, University of Oxford, Parks Road, Oxford; Atomic Energy Research Institute, Tokai, Japan
&
B. K. Tanner Department of Metallurgy, University of Oxford, Parks Road, Oxford; Department of Physics, University of Durham, South Road, Durham
Pages 309-322 | Received 12 Sep 1973, Published online: 20 Aug 2006

Citations (20)

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Read on this site (4)

Y. Miura, F. Higuchi & H. Era. (1995) Dislocation multiplication sources in copper revealed by X-ray topography. Philosophical Magazine A 71:6, pages 1363-1373.
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Johsei Nagakawa & M. Meshii. (1981) The deformation of niobium single crystals at temperatures between 77 and 4.2 K. Philosophical Magazine A 44:5, pages 1165-1191.
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I.M. Buckley-golder & B.K. Tanner. (1980) Deformation studies of initially dislocation-free copper crystals 111. In situ X-ray topography. Philosophical Magazine A 42:4, pages 559-573.
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I.M. Buckley-golder & B.K. Tanner. (1979) Deformation studies of initially dislocation-free copper crystals II. Constant strain rate tests on Cr-plated crystals. Philosophical Magazine A 39:5, pages 551-562.
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Articles from other publishers (16)

M. C. Cai, H. J. Shi & T. Yu. (2010) A dislocation-based constitutive description of strain-rate effect on the deformation resistance of metals. Journal of Materials Science 46:4, pages 1087-1094.
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Ji Luo & Zhi Rui Wang. (2009) A New Constitutive Model for Work Hardening Based on Gain Boundary Energy Density. Materials Science Forum 633-634, pages 249-259.
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A.M. Minor, E.T. Lilleodden, E.A. Stach & J.W. MorrisJr.Jr.. (2011) Direct observations of incipient plasticity during nanoindentation of Al. Journal of Materials Research 19:1, pages 176-182.
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L. Casarotto, R. Tutsch, R. Ritter, J. Weidenmüller, A. Ziegenbein, F. Klose & H. Neuhäuser. (2003) Propagation of deformation bands investigated by laser scanning extensometry. Computational Materials Science 26, pages 210-218.
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H. Neuhäuser & A. Hampel. (1993) Observation of lüders bands in single crystals. Scripta Metallurgica et Materialia 29:9, pages 1151-1157.
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Bruce Steiner, Masao Kuriyama & Ronald C. Dobbyn. (1990) Insight into the genesis of irregularity during crystal growth achieved monochromatic high sensitivity monochromatic synchrotron x-radiation diffraction imaging (topography). Progress in Crystal Growth and Characterization of Materials 20:3, pages 189-216.
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M.S. Al-Ourfi & B.K. Tanner. (1990) Theoretical modelling and Czochralski growth of high perfection nickel single crystals. Journal of Crystal Growth 99:1-4, pages 139-144.
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R.A. Varin, B. Mazurek & D. Himbeault. (1987) Discontinuous yielding in ultrafine-grained austenitic stainless steels. Materials Science and Engineering 94, pages 109-119.
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Rong Hsu & R.J. Arsenault. (1984) The influence of surface removal on the Bauschinger effect. Materials Science and Engineering 66:1, pages 35-45.
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Hiroaki Kurishita, Kôichi Nakajima & Hideo Yoshinaga. (1982) The high temperature deformation mechanism in titanium carbide single crystals. Materials Science and Engineering 54:2, pages 177-190.
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Marc Duseaux & Guy Jacob. (1982) Formation of dislocations during liquid encapsulated Czochralski growth of GaAs single crystals. Applied Physics Letters 40:9, pages 790-793.
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K. Kamada. (1980) Melt growth of metal crystals. Progress in Crystal Growth and Characterization 3:4, pages 309-332.
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H. Naramoto. (1978) X-ray topographic study of dislocation-free niobium single crystal deformed at 180 K. Scripta Metallurgica 12:11, pages 1027-1030.
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I. Buckley-Golder. (1977) Dislocation-free copper: A case history. Journal of Crystal Growth 40:2, pages 189-194.
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B.K. TANNER. 1976. X-ray Diffraction Topography. X-ray Diffraction Topography 155 169 .
H. Naramoto & K. Kamada. (1974) Growth of niobium single crystals by a pedestal method. Journal of Crystal Growth 24-25, pages 531-536.
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