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Original Articles

Polarity in bending deformation of InSb crystals

I. Experiments

&
Pages 123-142 | Received 07 Jan 1975, Published online: 20 Aug 2006

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Read on this site (4)

M'barek Omri, Jean-Pierre Michel & Amand George. (1990) Plastic deformation of gallium antimonide single crystals: Yield stresses, activation parameters and dislocation structures. Philosophical Magazine A 62:2, pages 203-225.
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M.R. Surowiec & B.K. Tanner. (1987) X-ray topographic investigation of microdeformation of InSb single crystals. Philosophical Magazine A 55:6, pages 791-805.
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Koji Sumino & Hirofumi Shimizu. (1975) Polarity in bending deformation in InSb crystals. The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics 32:1, pages 143-157.
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Articles from other publishers (20)

O. I. Vlasenko. (2022) INDUCED RESTRUCTURING OF THE CRYSTAL STRUCTURE AND ACOUSTIC RESPONSE IN SEMICONDUCTORS BASED ON CADMIUM TELLURIDE FOR USE IN OPTOELECTRONICS AND TOPICAL AREAS OF SEMICONDUCTOR TECHNOLOGY (REVIEW). Optoelektronìka ta napìvprovìdnikova tehnìka 57, pages 43-70.
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Hans Siethoff. (2000) Homopolar band gap and thermal activation parameters of plasticity of diamond and zinc-blende semiconductors. Journal of Applied Physics 87:7, pages 3301-3305.
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S. Branchu, H. Garem, J. Rabier & J. L. Demenet. (1998) Plasticity of InSb at Low Temperature: Analysis of Microstructures by Transmission Electron Microscopy. physica status solidi (a) 167:1, pages 89-106.
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H. Siethoff. (1994) Correlation between the band gap of semiconductors and thermal activation parameters of plasticity. Applied Physics Letters 65:2, pages 174-176.
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Hans Siethojf. 1992. The Mechanical Properties of Semiconductors. The Mechanical Properties of Semiconductors 143 187 .
Hans Siethoff & Ralf Behrensmeier. (1990) Plasticity of undoped GaAs deformed under liquid encapsulation. Journal of Applied Physics 67:8, pages 3673-3680.
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Beate Solcher, Gert Klöss & Peter Paufler. (1990) Slip band formation during bending of GaAs wafers. Zeitschrift für Kristallographie 192:3-4, pages 201-218.
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Ichiro Yonenaga, Koji Sumino, Gunzo Izawa, Hisao Watanabe & Junji Matsui. (2011) Mechanical property and dislocation dynamics of GaAsP alloy semiconductor. Journal of Materials Research 4:2, pages 361-365.
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M.S. Kim, S. Hanada, S. Watanabe & O. Izumi. (1988) Orientation dependence of deformation and fracture behavior in Ni3(Al, Ti) single crystals at 973 K. Acta Metallurgica 36:11, pages 2967-2978.
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J. Rabier & A. George. (1987) Dislocations and plasticity in semiconductors. II. The relation between dislocation dynamics and plastic deformation. Revue de Physique Appliquée 22:11, pages 1327-1351.
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H. Booyens & J. H. Basson. (1984) On the Optimal Choice of Substrate for Hgo.8Cdo.2Te Epitaxial Layers. Physica Status Solidi (a) 85:2, pages 449-454.
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R. Sawada, T. Karaki & J. Watanabe. (1983) Generation of dislocations introduced by bending stress in a Si wafer. Applied Physics A Solids and Surfaces 31:2, pages 109-114.
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R. Sawada, T. Karaki & J. Watanabe. (1982) Bending gettering of Si crystalline defects. Journal of Applied Physics 53:10, pages 6983-6988.
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S. Cole, M. Brown & A. F. W. Willoughby. (1982) The microhardness of CdxHg1-xTe. Journal of Materials Science 17:7, pages 2061-2066.
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R. Sawada, T. Karaki & J. Watanabe. (1981) Gettering of crystalline defects in Si by bending. Applied Physics Letters 38:5, pages 368-369.
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S. Cole. (1980) Plastic bending of CdxHg1?xTe. Journal of Materials Science 15:10, pages 2591-2596.
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G. T. Brown, B. Cockayne & W. R. Macewan. (1980) Deformation behaviour of single crystals of InP in uniaxial compression. Journal of Materials Science 15:6, pages 1469-1477.
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S. C. Varshney & A. A. Gundjian. (1980) Laser induced lattice strains and damage threshold limitation due to lattice defects in transparent optical materials. Applied Optics 19:3, pages 455.
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H. Booyens, J. S. Vermaak & G. R. Proto. (1978) The asymmetric deformation of GaAs single crystals. Journal of Applied Physics 49:11, pages 5435-5440.
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H. Steinhardt & P. Haasen. (1978) Creep and dislocation velocities in gallium arsenide. Physica Status Solidi (a) 49:1, pages 93-101.
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