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Publication Cover
The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics
Series 8
Volume 35, 1977 - Issue 5
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Original Articles

Temperature dependent conductivity of closely compensated phosphorus-doped silicon

M. Finetti C. N. R.-LAMEL Laboratory, Via Castagnoli 1, 40126, Bologna, Italy; Istituto Chimico della Facolta di Ingegneria dell'Università di Bologna
,
A. M. Mazzone C. N. R.-LAMEL Laboratory, Via Castagnoli 1, 40126, Bologna, Italy
,
L. Passabi C. N. R.-LAMEL Laboratory, Via Castagnoli 1, 40126, Bologna, Italy; Istituto di Fisica dell'Università di Ferrara
,
B. Riccò C. N. R.-LAMEL Laboratory, Via Castagnoli 1, 40126, Bologna, Italy; Istituto di Elettronica della Facoltà di Ingegneria della Università di Bologna
&
E. Susi C. N. R.-LAMEL Laboratory, Via Castagnoli 1, 40126, Bologna, Italy
Pages 1141-1151 | Received 01 Nov 1976, Published online: 13 Sep 2006

Citations (7)

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Read on this site (1)

W.E. Spear. (1977) Doped amorphous semiconductors. Advances in Physics 26:6, pages 811-845.
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Articles from other publishers (6)

V. L. Borblik. (2008) Revealing the hopping mechanism of conduction in heavily doped silicon diodes. Semiconductor physics, quantum electronics and optoelectronics 8:2, pages 41-44.
Crossref
M. Ada-Hanifi, J. Sicart, J.L. Robert & D. Bielle-Daspet. (1987) Hubbard's sub-band conduction in Si poly-SiO2 transition layers. Solid-State Electronics 30:7, pages 765-769.
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J. Monecke, W. Siegel, E. Ziegler & G. Kühnel. (2006) On the Concentration Dependence of the Thermal Impurity‐to‐Band Activation Energies in Semiconductors. physica status solidi (b) 103:1, pages 269-279.
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S. Usui & M. Kikuchi. (1979) Properties of heavily doped GDSi with low resistivity. Journal of Non-Crystalline Solids 34:1, pages 1-11.
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P.G. Le Comber, W.E. Spear & D. Allan. (1979) Transport studies in doped amorphous silicon. Journal of Non-Crystalline Solids 32:1-3, pages 1-15.
Crossref
P. G. LeComber & W. E. Spear. 1985. Amorphous Semiconductors. Amorphous Semiconductors 251 285 .

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