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Original Articles

Hall effect and impurity conduction in substitutionally doped amorphous silicon

, &
Pages 1173-1187 | Received 26 Oct 1976, Accepted 20 Dec 1976, Published online: 13 Sep 2006

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Read on this site (31)

Pravin Kumar Singh & D. K. Dwivedi. (2017) Chalcogenide glass: Fabrication techniques, properties and applications. Ferroelectrics 520:1, pages 256-273.
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R. Martins, L. Raniero, L. Pereira, D. Costa , H. Águas, S. Pereira, L. Silva, A. Gonçalves, I. Ferreira & E. Fortunato. (2009) Nanostructured silicon and its application to solar cells, position sensors and thin film transistors. Philosophical Magazine 89:28-30, pages 2699-2721.
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J. Okumu, J.M. Holender & G.J. Morgan. (1995) The Hall effect and electronic conduction in amorphous Si. Philosophical Magazine Letters 72:2, pages 135-142.
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D. Weaire & D. Hobbs. (1993) Electrons and holes in amorphous silicon. Philosophical Magazine Letters 68:4, pages 265-272.
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J.M. Holender & G.J. Morgan. (1992) The double-sign anomaly of the Hall coefficient in amorphous silicon: Verification by computer simulations. Philosophical Magazine Letters 65:5, pages 225-231.
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N.F. Mott. (1991) The sign of the Hall effect in amorphous silicon. Philosophical Magazine B 63:1, pages 3-5.
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F. Ghiassy, D.I. Jones & A.D. Stewart. (1985) The transport properties of boron-doped amorphous silicon and their interpretation. Philosophical Magazine B 52:2, pages 139-152.
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Le Xu, C.L. Foiles & D.K. Reinhard. (1984) Thermopower of sputtered amorphous Si(Ga) alloys. Philosophical Magazine B 49:3, pages 249-258.
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A.D. Stewart, D.I. Jones & G. Willeke. (1983) Electronic transport in glow-discharge microcrystalline germanium. Philosophical Magazine B 48:4, pages 333-340.
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W. E. Spear & H. Steemers. (1983) The interpretation of drift mobility experiments on amorphous silicon. Philosophical Magazine B 47:5, pages L77-L82.
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G. Willeke, W.E. Spear, D.I. Jones & P.G. Le Comber. (1982) Thermoelectric power, hall effect and density-of-states measurements on glow-discharge microcrystalline silicon. Philosophical Magazine B 46:2, pages 177-190.
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B. Goldstein, J. Dresner & D.J. Szostak. (1982) The diffusion of holes in undoped amorphous Si :H. Philosophical Magazine B 46:1, pages 63-70.
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D.E. Carlson, R.W. Smith, C.W. Magee & P.J. Zanzucchi. (1982) The role of hydrogen in heavily doped amorphous silicon. Philosophical Magazine B 45:1, pages 51-68.
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D.A. Anderson & W. Paul. (1982) Transport properties of a-Si: H alloys prepared by r.f. sputtering. Philosophical Magazine B 45:1, pages 1-23.
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P.N. Butcher. (1980) Calculation of hopping transport coefficients. Philosophical Magazine B 42:6, pages 799-824.
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W.E. Spear, D. Allan, P. Le Comber & A. Ghaith. (1980) A new approach to the interpretation of transport results in a-Si. Philosophical Magazine B 41:4, pages 419-438.
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D.I. Jones, W.E. Spear, P.G. Le Comber, S. Li & R. Martins. (1979) Electronic transport and photoconductivity in phosphorus-doped amorphous germanium. Philosophical Magazine B 39:2, pages 147-158.
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M. Roilos. (1978) II. Experimental Hall effect data for amorphous semiconductors. Philosophical Magazine B 38:5, pages 477-489.
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L. Friedman. (1978) I. The Hall effect in ordered and disordered systems. Philosophical Magazine B 38:5, pages 467-476.
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D. Allax. (1978) Hole drift mobility in amorphous silicon. Philosophical Magazine B 38:4, pages 381-392.
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O.J. Reilly & W.E. Spear. (1978) Electronic properties of crystallized glow discharge silicon. Philosophical Magazine B 38:3, pages 295-302.
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J. Baixeras, D. Mencaraglia & P. Andro. (1978) Enhanced photoconductivity in nitrogen-doped amorphous silicon prepared by d.c. sputtering. Philosophical Magazine B 37:3, pages 403-407.
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E. Mytilineou & M. Roilos. (1978) Dependence of the Hall mobility on composition in As2(S, Se, Te)3 glasses. Philosophical Magazine B 37:3, pages 387-396.
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W.E. Spear. (1977) Doped amorphous semiconductors. Advances in Physics 26:6, pages 811-845.
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D.A. Anderson & W.E. Spear. (1977) Photoconductivity and recombination in doped amorphous silicon. The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics 36:3, pages 695-712.
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L. Friedman. (1977) Electrical conductivity and thermoelectric power of substitutionally doped amorphous silicon. The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics 36:3, pages 553-564.
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D.I. Jones, P.G. Le Comber & W.E. Speak. (1977) Thermoelectric power in phosphorous doped amorphous silicon. The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics 36:3, pages 541-551.
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D. Meimaris, J. Katris, D. Martakos & M. Roilos. (1977) Hall effect in CdGe As2 glasses. The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics 35:6, pages 1633-1640.
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D. Emin. (1977) The sign of the Hall effect in hopping conduction. The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics 35:5, pages 1189-1198.
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J. Takeya, T. Uemura, K. Sakai & Y. Okada. (2014) Materials and devices with applications in high-end organic transistors. Thin Solid Films 554, pages 19-26.
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Jaeyoung Jang, Wenyong Liu, Jae Sung Son & Dmitri V. Talapin. (2014) Temperature-Dependent Hall and Field-Effect Mobility in Strongly Coupled All-Inorganic Nanocrystal Arrays. Nano Letters 14:2, pages 653-662.
Crossref
Anran Guo, Jian He, Chong Wang, Wei Li & Yadong Jiang. Carrier sign reversal in amorphous silicon ruthenium thin films deposited by co-sputtering. Carrier sign reversal in amorphous silicon ruthenium thin films deposited by co-sputtering.
Andriy Zakutayev, Frank J. LucianoIVIV, Vincent P. Bollinger, Ajaya K. Sigdel, Paul F. Ndione, John D. Perkins, Joseph J. Berry, Philip A. Parilla & David S. Ginley. (2013) Development and application of an instrument for spatially resolved Seebeck coefficient measurements. Review of Scientific Instruments 84:5.
Crossref
Xin Zhang, Michael Manno, Andrew Baruth, Melissa Johnson, Eray S. Aydil & Chris Leighton. (2013) Crossover From Nanoscopic Intergranular Hopping to Conventional Charge Transport in Pyrite Thin Films. ACS Nano 7:3, pages 2781-2789.
Crossref
Robert A. Street & K. Winer. 2006. Materials Science and Technology. Materials Science and Technology.
C. Sellmer, T. Bronger, W. Beyer & R. Carius. (2012) Anomalous Hall effect in microcrystalline Si:H films. Journal of Non-Crystalline Solids 358:17, pages 2044-2047.
Crossref
Katsumi Abe, Kenji Nomura, Toshio Kamiya & Hideo Hosono. (2012) Optical evidence for quantization in transparent amorphous oxide semiconductor superlattice. Physical Review B 86:8.
Crossref
T. Uemura, M. Yamagishi, J. Soeda, Y. Takatsuki, Y. Okada, Y. Nakazawa & J. Takeya. (2012) Temperature dependence of the Hall effect in pentacene field-effect transistors: Possibility of charge decoherence induced by molecular fluctuations. Physical Review B 85:3.
Crossref
Yohei Yamaguchi, Hayami Hashimoto, Tsuyoshi Segawa & Mutsumi Kimura. (2011) Analysis of the Hall Effect in Micro Poly-Si Hall Devices and Origin of Offset Voltages. Electrochemical and Solid-State Letters 14:6, pages J26.
Crossref
M. Yamagishi, J. Soeda, T. Uemura, Y. Okada, Y. Takatsuki, T. Nishikawa, Y. Nakazawa, I. Doi, K. Takimiya & J. Takeya. (2010) Free-electron-like Hall effect in high-mobility organic thin-film transistors. Physical Review B 81:16.
Crossref
Toshio Kamiya, Kenji Nomura & Hideo Hosono. (2010) Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors. Applied Physics Letters 96:12.
Crossref
I. Crupi, S. Mirabella, D. D’Angelo, S. Gibilisco, A. Grasso, S. Di Marco, F. Simone & A. Terrasi. (2010) Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition. Journal of Applied Physics 107:4.
Crossref
Mutsumi Kimura, Yohei Yamaguchi, Hayami Hashimoto, Masaaki Hirako, Toshifumi Yamaoka & Satoshi Tani. (2010) Analysis of Hall Voltage in Micro Poly-Si Hall Cells. Electrochemical and Solid-State Letters 13:8, pages J96.
Crossref
Toshio Kamiya, Kenji Nomura & Hideo Hosono. (2009) Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model. Journal of Display Technology 5:12, pages 462-467.
Crossref
Yasushi Takamatsu, Tsuyoshi Sekitani & Takao Someya. (2007) Temperature dependence of Hall effects in organic thin-film transistors on plastic films. Applied Physics Letters 90:13.
Crossref
Tsuyoshi Sekitani, Yasushi Takamatsu, Shintaro Nakano, Takayasu Sakurai & Takao Someya. (2006) Hall effect measurements using polycrystalline pentacene field-effect transistors on plastic films. Applied Physics Letters 88:25.
Crossref
QING-SONG LEI, ZHI-MENG WU, JIAN-PING XI, XIN-HUA GENG, YING ZHAO & JIAN SUN. (2012) DEVELOPMENT OF HIGHLY CONDUCTIVE BORON-DOPED MICROCRYSTALLINE SILICON FILMS FOR APPLICATION IN SOLAR CELLS. International Journal of Modern Physics B 20:03, pages 303-314.
Crossref
Jun Takeya, Koichi Yamada, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Taishi Takenobu & Yoshihiro Iwasa. (2011) Hall Effect in Organic Single-crystal Field-effect Transistors. MRS Proceedings 937.
Crossref
Lei Qing-Song, Wu Zhi-Meng, Geng Xin-Hua, Zhao Ying, Sun Jian & Xi Jian-Ping. (2006) Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films. Chinese Physics 15:1, pages 213-218.
Crossref
Kazuo Morigaki & Chisato Ogihara. 2007. Springer Handbook of Electronic and Photonic Materials. Springer Handbook of Electronic and Photonic Materials 565 580 .
David J. Grant, Czang-Ho Lee, Arokia Nathan, Ujjwal K. Das & Arun Madan. (2011) Bottom-Gate TFTs with Channel Layer Grown by Pulsed PECVD Technique. MRS Proceedings 808.
Crossref
H. Fritzsche. 2003. digital Encyclopedia of Applied Physics. digital Encyclopedia of Applied Physics.
H. Overhof & P. Thomas. 2001. Encyclopedia of Materials: Science and Technology. Encyclopedia of Materials: Science and Technology 270 277 .
P. Thomas & H. Overhof. 2001. Properties and Applications of Amorphous Materials. Properties and Applications of Amorphous Materials 261 290 .
R. A. Street & K. Winer. 2000. Handbook of Semiconductor Technology Set. Handbook of Semiconductor Technology Set 541 595 .
R. A. Street & K. Winer. 2000. Handbook of Semiconductor Technology. Handbook of Semiconductor Technology 541 595 .
. 2000. Ternary Compounds, Organic Semiconductors. Ternary Compounds, Organic Semiconductors 1 5 .
. 2000. Ternary Compounds, Organic Semiconductors. Ternary Compounds, Organic Semiconductors 1 2 .
. 2000. Ternary Compounds, Organic Semiconductors. Ternary Compounds, Organic Semiconductors 1 32 .
M. M. Mkrtchyan, A. S. Gasparyan, K. A. Mkhoyan, J. A. Liddle & A. E. Novembre. (1999) Determination of the possible magnitude of the charging effect in a SCALPEL mask membrane. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 17:6, pages 2888-2892.
Crossref
A. Ilie & B. Equer. (1998) Field-enhanced generation in hydrogenated amorphous silicon. Physical Review B 57:24, pages 15349-15359.
Crossref
E. A. Lebedev, E. A. Smorgonskaya & G. Polisski. (1998) Drift mobility of excess carriers in porous silicon. Physical Review B 57:23, pages 14607-14610.
Crossref
M. H. Rahman, A. M. Al-Saie & J. Beynon. (1996) DC electrical conduction in electron beam evaporated Cu-GeO2 thin cermet films. Physica Status Solidi (a) 156:2, pages 397-412.
Crossref
C. E. Nebel, M. Rother, C. Summonte, M. Heintze & M. Stutzmann. (2011) Hall-Effect and Sign Properties in Hydrogenated Amorphous and Disordered Crystalline Silicon. MRS Proceedings 420.
Crossref
C.M. Fortmann. 1995. Plasma Deposition of Amorphous Silicon-Based Materials. Plasma Deposition of Amorphous Silicon-Based Materials 131 176 .
Yasuyoshi Mishima & Michiko Takei. (1994) Non-mass-separated ion shower doping of polycrystalline silicon. Journal of Applied Physics 75:10, pages 4933-4938.
Crossref
A. Compaan, M.E. Savage, A. Aydinli & T. Azfar. (1994) Raman studies of doped polycrystalline silicon from laser-annealed, doped a-Si:H. Solid State Communications 90:2, pages 77-81.
Crossref
G.J. Morgan, J. Okumu, J.M. Holender, D. Weaire & D. Hobbs. (1993) Electrons, holes, and the hall effect in amorphous silicon. Journal of Non-Crystalline Solids 164-166, pages 457-460.
Crossref
B.Y. Tong & J. Du. (1993) In search of a normal Hall effect in amorphous silicon. Journal of Non-Crystalline Solids 164-166, pages 453-456.
Crossref
C.E. Nebel & R.A. Street. (1993) Hall experiments and interpretation in a-Si:H and a-SiC:H. Journal of Non-Crystalline Solids 164-166, pages 449-452.
Crossref
R. Murri, N. Pinto & L. Schiavulli. (1993) Electronic-transport properties of unhydrogenated amorphous gallium arsenide. Il Nuovo Cimento D 15:5, pages 785-792.
Crossref
V S Veerasamy, G A J Amaratunga, C A Davis, A E Timbs, W I Milne & D R McKenzie. (1993) n-type doping of highly tetrahedral diamond-like amorphous carbon. Journal of Physics: Condensed Matter 5:13, pages L169-L174.
Crossref
C. E. Nebel & R.A Street. (1993) Revealing Mysteries of Hall Experiments on a-Si:H and a-SiC:H. MRS Proceedings 297.
Crossref
J M Holender & G J Morgan. (1992) The electronic structure and conductivity of large models of amorphous silicon. Journal of Physics: Condensed Matter 4:18, pages 4473-4482.
Crossref
Hans Joachim Möller. (1991) Semiconductors for solar cell applications. Progress in Materials Science 35:3-4, pages 205-418.
Crossref
K. Winer, G. B. Anderson, S. E. Ready, R. Z. Bachrach, R. I. Johnson, F. A. Ponce & J. B. Boyce. (1990) Excimer-laser-induced crystallization of hydrogenated amorphous silicon. Applied Physics Letters 57:21, pages 2222-2224.
Crossref
N. Du, Y. T. Zhu, B. Y. Tong & S. K. Wong. (1990) Observation of normal Hall coefficient of amorphous Si thin films prepared by low-pressure chemical-vapor deposition. Physical Review B 41:2, pages 1251-1253.
Crossref
. 1990. Thin Films by Chemical Vapour Deposition. Thin Films by Chemical Vapour Deposition 525 681 .
MATTI N. MAKADSI. 1990. Energy and the Environment. Energy and the Environment 164 169 .
J. Kakalios. (1989) A physical interpretation of the Hall effect in amorphous semiconductors. Journal of Non-Crystalline Solids 114, pages 372-374.
Crossref
N. Du, Y.T. Zhu, B.Y. Tong, P.K. John, S.K. Wong & K.P. Chik. (1989) Normal Hall coefficient of LPCVD amorphous silicon. Journal of Non-Crystalline Solids 114, pages 369-371.
Crossref
O.S. Panwar, P.N. Dixit, Ajay Tyagi, Tanay Seth, B.S. Satyanarayan, R. Bhattacharyya & V.V. Shah. (1989) Electrical properties of boron-doped hydrogenated amorphous silicon films prepared by glow discharge decomposition in dilute silane. Thin Solid Films 176:1, pages 79-90.
Crossref
Michito Utsunomiya & Akira Yoshida. (1989) Effect of mechanical strain on electrical characteristics of hydrogenated amorphous silicon junctions. Journal of Applied Physics 66:1, pages 308-311.
Crossref
Harald Overhof & Peter ThomasHarald Overhof & Peter Thomas. 1989. Electronic Transport in Hydrogenated Amorphous Semiconductors. Electronic Transport in Hydrogenated Amorphous Semiconductors 39 61 .
M. N. Makadsi & M. F. A. Alias. (1988) Effect of doping percentages on the conductivity and energy gap of a -Si thin films . Physical Review B 38:9, pages 6143-6146.
Crossref
E. K. Sichel, L. Greber & K. Wang. (1988) Hall effect in amorphous Si:H and amorphous Si:H/amorphous Ge:H superlattices. Applied Physics Letters 52:13, pages 1074-1076.
Crossref
. 1988. The Physics and Applications of Amorphous Semiconductors. The Physics and Applications of Amorphous Semiconductors 517 538 .
Cz. Wȩclewicz & L. Żdanowicz. (1987) Transport properties of thin amorphous films of cadmium arsenide. Thin Solid Films 151:1, pages 87-101.
Crossref
B. Pistoulet & G. Hamamdjian. (1987) Mixed conductivity and potential fluctuations in semi-insulating GaAs:Cr. Physical Review B 35:12, pages 6305-6317.
Crossref
B J Hickey & G J Morgan. (1986) The density of states and spectral function in amorphous Si obtained using the equation of motion method in k-space. Journal of Physics C: Solid State Physics 19:31, pages 6195-6209.
Crossref
D. Jousse, E. Bustarret, A. Deneuville & J. P. Stoquert. (1986) rf-sputtered B-doped a -Si:H and a -Si-B-H alloys . Physical Review B 34:10, pages 7031-7044.
Crossref
Vincenzo Augelli, Teresa Ligonzo, Roberto Murri & Luigi Schiavulli. (1985) Effects of the dopants on the electrical conductivity and hall mobility in Si: H, Cl films. Thin Solid Films 125:1-2, pages 9-16.
Crossref
David Adler. 1985. Physical Properties of Amorphous Materials. Physical Properties of Amorphous Materials 5 103 .
B. Movaghar. 1985. Physics of Disordered Materials. Physics of Disordered Materials 399 412 .
W. Beyer. (1984) Doping effects in amorphous silicon. Journal of Non-Crystalline Solids 66:1-2, pages 1-12.
Crossref
Vincenzo Augelli, Roberto Murri & Teresa Ligonzo. (1984) Hall mobility in doped Si:H, Cl films. Thin Solid Films 116:4, pages 311-315.
Crossref
S. Nishida, M. Konagai & K. Takahashi. (1984) Seebeck and piezoresistance effects in amorphous-microcrystalline mixed-phase silicon films and applications to power sensors and strain gauges. Thin Solid Films 112:1, pages 7-16.
Crossref
W. Beyer & H. Overhof. 1984. Hydrogenated Amorphous Silicon - Electronic and Transport Properties. Hydrogenated Amorphous Silicon - Electronic and Transport Properties 257 307 .
J. Dresner. 1984. Hydrogenated Amorphous Silicon - Electronic and Transport Properties. Hydrogenated Amorphous Silicon - Electronic and Transport Properties 193 205 .
Walther Fuhs. 1984. Advances in Solid State Physics. Advances in Solid State Physics 133 161 .
T. Tiedje. 1984. The Physics of Hydrogenated Amorphous Silicon II. The Physics of Hydrogenated Amorphous Silicon II 261 300 .
Nevill Mott. 1984. The Physics of Hydrogenated Amorphous Silicon II. The Physics of Hydrogenated Amorphous Silicon II 169 193 .
David E. Carlson. 1984. The Physics of Hydrogenated Amorphous Silicon I. The Physics of Hydrogenated Amorphous Silicon I 203 244 .
Walter E. Spear & Peter G. LeComber. 1984. The Physics of Hydrogenated Amorphous Silicon I. The Physics of Hydrogenated Amorphous Silicon I 63 118 .
Vincenzo Augelli, Roberto Murri, Nicola Alba & Teresa Ligonzo. (1983) Hall mobility in doped and undoped amorphous Si:H,Cl films. Journal of Non-Crystalline Solids 59-60, pages 481-484.
Crossref
W.E. Spear. (1983) The study of transport and related properties of amorphous silicon by transient experiments. Journal of Non-Crystalline Solids 59-60, pages 1-13.
Crossref
J. Dresner. (1983) Hall effect and hole transport in B-doped a-Si:H. Journal of Non-Crystalline Solids 58:2-3, pages 353-357.
Crossref
Vincenzo Augelli & Roberto Murri. (1983) Dark conductivity in amorphous undoped silicon films. Journal of Non-Crystalline Solids 57:2, pages 225-240.
Crossref
V. Augelli, R. Murri & T. Ligonzo. (1983) Hall mobility in undoped microcrystalline Si:H,Cl films. Applied Physics Letters 43:3, pages 266-267.
Crossref
W.E. Spear, G. Willeke & P.G. LeComber. (1983) Electronic properties of microcrystalline silicon prepared in the glow discharge plasma. Physica B+C 117-118, pages 908-913.
Crossref
Kasturi Lal Chopra & Suhit Ranjan DasKasturi Lal Chopra & Suhit Ranjan Das. 1983. Thin Film Solar Cells. Thin Film Solar Cells 427 456 .
M Grunewald, P Thomas & D Wurtz. (1981) The sign anomaly of the Hall effect in amorphous tetrahedrally bonded semiconductors: a chemical-bond orbital approach. Journal of Physics C: Solid State Physics 14:28, pages 4083-4093.
Crossref
Richard S. Crandall. (1981) Determination of the drift mobility in high-conductivity amorphous silicon. Journal of Applied Physics 52:3, pages 1387-1391.
Crossref
Stephen J. Fonash. 1981. Solar Cell Device Physics. Solar Cell Device Physics 6 68 .
John D. Joannopoulos & Douglas C. Allan. 1981. Festkörperprobleme 21. Festkörperprobleme 21 167 190 .
Hellmut Fritzsche. 1981. Fundamental Physics of Amorphous Semiconductors. Fundamental Physics of Amorphous Semiconductors 1 13 .
B. L. Zalph, L. J. Dimmey, H. Park, P. L. Jones & F. H. Cocks. (1980) Hydrogenated amorphous boron: Resistivity and doping behavior. Physica Status Solidi (a) 62:2, pages K185-K188.
Crossref
H Fritzsche. (1980) Amorphous semiconducting Si:H. Bulletin of Materials Science 2:5, pages 295-315.
Crossref
H. Fritzsche. (1980) Characterized of glow-discharge deposited a-Si:H. Solar Energy Materials 3:4, pages 447-501.
Crossref
N F Mott. (1980) States in the gap in non-crystalline semiconductors. Journal of Physics C: Solid State Physics 13:30, pages 5433-5471.
Crossref
J. Dresner. (1980) Hall mobility for electrons in undoped a -Si:H . Applied Physics Letters 37:8, pages 742-744.
Crossref
A. R. Moore. (1980) Photoelectromagnetic effect in amorphous silicon. Applied Physics Letters 37:3, pages 327-330.
Crossref
D.E. CARLSON. 1980. Polycrystalline and Amorphous Thin Films and Devices. Polycrystalline and Amorphous Thin Films and Devices 175 207 .
Nguyen Van Dong & Tran Quoc Hai. (1980) Effect of Sb doping on the electronic transport in a-Ge and a-Si. Journal of Non-Crystalline Solids 35-36, pages 351-356.
Crossref
David Emin. 1980. The Hall Effect and Its Applications. The Hall Effect and Its Applications 281 298 .
S. Usui & M. Kikuchi. (1979) Properties of heavily doped GDSi with low resistivity. Journal of Non-Crystalline Solids 34:1, pages 1-11.
Crossref
P.G. Le Comber, W.E. Spear & D. Allan. (1979) Transport studies in doped amorphous silicon. Journal of Non-Crystalline Solids 32:1-3, pages 1-15.
Crossref
P. G. LeComber & W. E. Spear. 1985. Amorphous Semiconductors. Amorphous Semiconductors 251 285 .
P. Nagels. 1985. Amorphous Semiconductors. Amorphous Semiconductors 113 158 .
Nguyen van Dong & Tran Quoc Hai. (2006) Electronic Transport in Doped a‐Ge and a‐Si Prepared by DC Cathodic Sputtering. physica status solidi (b) 88:2, pages 555-561.
Crossref
Nguyen Van Dong & Tran Quoc Hai. (1978) Dopage du Si amorphe par la méthode de pulvérisation cathodique et propriétés de transport des couches dopées au P et au B. Revue de Physique Appliquée 13:4, pages 176-179.
Crossref
David Emin. (1977) Amorphous Semiconductors. Science 198:4320, pages 881-881.
Crossref
W. E. Spear. (2013) New Developments in the Field of Amorphous Semiconductors. Physikalische Blätter 33:12, pages 548-549.
Crossref

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