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The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics
Series 8
Volume 35, 1977 - Issue 5
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Original Articles

The sign of the Hall effect in hopping conduction

D. Emin Sandia Laboratories, Albuquerque, New Mexico, 87115, U.S.A.
Pages 1189-1198 | Received 14 Sep 1976, Accepted 10 Dec 1976, Published online: 13 Sep 2006

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J.M. Holender & G.J. Morgan. (1992) The double-sign anomaly of the Hall coefficient in amorphous silicon: Verification by computer simulations. Philosophical Magazine Letters 65:5, pages 225-231.
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N.F. Mott. (1991) The sign of the Hall effect in amorphous silicon. Philosophical Magazine B 63:1, pages 3-5.
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N.F. Mott. (1985) The pre-exponential factor in the conductivity of liquid semiconductors. Philosophical Magazine B 52:2, pages 169-175.
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N.F. Mott. (1985) Defects in non-crystalline materials. Philosophical Magazine B 51:2, pages 177-182.
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N.F. Mott. (1985) The pre-exponential factor in the conductivity of amorphous silicon. Philosophical Magazine B 51:1, pages 19-25.
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B. Goldstein, J. Dresner & D.J. Szostak. (1982) The diffusion of holes in undoped amorphous Si :H. Philosophical Magazine B 46:1, pages 63-70.
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H. Overhof. (1981) The Hall mobility in amorphous semiconductors in the presence of long-range potential fluctuations. Philosophical Magazine B 44:2, pages 317-322.
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P.N. Butcher & A.A. Kumar. (1980) The Hall mobility of carriers hopping in an impurity band. Philosophical Magazine B 42:2, pages 201-212.
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G.N. Greaves, S.R. Elliott & E.A. Davis. (1979) Amorphous arsenic. Advances in Physics 28:1, pages 49-141.
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N.F. Mott. (1978) VIII. Some comments and suggestions on the Hall effect in non-crystalline systems. Philosophical Magazine B 38:5, pages 549-553.
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E.A. Davis. (1978) Meeting on the ‘Hall effect in disordered systems’ held at the Cavendish Laboratory, Cambridge. Philosophical Magazine B 38:5, pages 463-465.
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W.E. Spear. (1977) Doped amorphous semiconductors. Advances in Physics 26:6, pages 811-845.
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D. Meimaris, J. Katris, D. Martakos & M. Roilos. (1977) Hall effect in CdGe As2 glasses. The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics 35:6, pages 1633-1640.
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N.F. Mott. (1977) Electrons in glass. Contemporary Physics 18:3, pages 225-245.
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Satish C. Agarwal. (2012) Role of potential fluctuations in phase-change GST memory devices. physica status solidi (b) 249:10, pages 1956-1961.
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C. Sellmer, T. Bronger, W. Beyer & R. Carius. (2012) Anomalous Hall effect in microcrystalline Si:H films. Journal of Non-Crystalline Solids 358:17, pages 2044-2047.
Crossref
Alexander V. Kolobov & Junji TominagaAlexander V. Kolobov & Junji Tominaga. 2012. Chalcogenides. Chalcogenides 35 47 .
G. Schierning, R. Theissmann, N. Stein, N. Petermann, A. Becker, M. Engenhorst, V. Kessler, M. Geller, A. Beckel, H. Wiggers & R. Schmechel. (2011) Role of oxygen on microstructure and thermoelectric properties of silicon nanocomposites. Journal of Applied Physics 110:11, pages 113515.
Crossref
U. Reislöhner, H. Metzner & C. Ronning. (2010) Hopping Conduction Observed in Thermal Admittance Spectroscopy. Physical Review Letters 104:22.
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Toshio Kamiya, Kenji Nomura & Hideo Hosono. (2010) Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors. Applied Physics Letters 96:12.
Crossref
I. Crupi, S. Mirabella, D. D’Angelo, S. Gibilisco, A. Grasso, S. Di Marco, F. Simone & A. Terrasi. (2010) Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition. Journal of Applied Physics 107:4.
Crossref
Toshio Kamiya, Kenji Nomura & Hideo Hosono. (2009) Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model. Journal of Display Technology 5:12, pages 462-467.
Crossref
J. X. Deng, Y. F. Tian, S. M. He, H. L. Bai, T. S. Xu, S. S. Yan, Y. Y. Dai, Y. X. Chen, G. L. Liu & L. M. Mei. (2009) Strong anisotropy of magnetization and sign reversion of ordinary Hall coefficient in single crystal Ge1−xMnx magnetic semiconductor films. Applied Physics Letters 95:6.
Crossref
Daniele Ielmini. (2008) Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses. Physical Review B 78:3.
Crossref
A S Alexandrov. (2007) Bose–Einstein condensation of strongly correlated electrons and phonons in cuprate superconductors. Journal of Physics: Condensed Matter 19:12, pages 125216.
Crossref
Jong-Soo Rhyee, J. Y. Kim, B. K. Cho, H. J. Lee, H. C. Kim & Hyun Min Park. (2006) Anomalous transport properties in ( , 0.05, 0.1, 0.2, and 0.3): Hall sign reversal in . Physical Review B 74:23.
Crossref
David Emin. (2006) Current-driven threshold switching of a small polaron semiconductor to a metastable conductor. Physical Review B 74:3.
Crossref
S.A. Baily, David Emin & Heng Li. (2006) Hall mobility of amorphous Ge2Sb2Te5. Solid State Communications 139:4, pages 161-164.
Crossref
S. Tripathi & R.O. Dusane. (2006) AMPS-1D simulation studies of electronic transport in n+-μc-Si:H thin films. Journal of Non-Crystalline Solids 352:9-20, pages 1105-1108.
Crossref
S. A. Baily & David Emin. (2006) Transport properties of amorphous antimony telluride. Physical Review B 73:16.
Crossref
Kazuo Morigaki & Chisato Ogihara. 2007. Springer Handbook of Electronic and Photonic Materials. Springer Handbook of Electronic and Photonic Materials 565 580 .
GERHARD PENSL, FLORIN CIOBANU, THOMAS FRANK, MICHAEL KRIEGER, SERGEY RESHANOV, FRANK SCHMID & MICHAEL WEIDNER. (2011) SiC MATERIAL PROPERTIES . International Journal of High Speed Electronics and Systems 15:04, pages 705-745.
Crossref
Michael Krieger, Kurt Semmelroth & Gerhard Pensl. (2004) Impurity Conduction Observed in Al-Doped 6H-SiC. Materials Science Forum 457-460, pages 685-688.
Crossref
. 2003. Advances in Amorphous Semiconductors. Advances in Amorphous Semiconductors 203 244 .
Charles F WindischJr.Jr., Kim F Ferris, Gregory J Exarhos & Shiv K Sharma. (2002) Conducting spinel oxide films with infrared transparency. Thin Solid Films 420-421, pages 89-99.
Crossref
Jai Singh. (2002) Effective mass of charge carriers in amorphous semiconductors and its applications. Journal of Non-Crystalline Solids 299-302, pages 444-448.
Crossref
Marcelo Jaime & Myron B. Salamon. 2002. Physics of Manganites. Physics of Manganites 243 267 .
Yoji Imai, Masakazu Mukaida, Minoru Ueda & Akio Watanabe. (2001) Screening of the possible boron-based n-type thermoelectric conversion materials on the basis of the calculated densities of states of metal borides and doped β-boron. Intermetallics 9:8, pages 721-734.
Crossref
. 2000. Ternary Compounds, Organic Semiconductors. Ternary Compounds, Organic Semiconductors 1 2 .
X. W. Cao, J. Fang, Z. H. Wang & K. B. Li. (1999) Anomaly of Hall effect in magnetoresistive La0.67Ca0.33MnO3. Applied Physics Letters 75:21, pages 3372-3374.
Crossref
H Ikemoto, H Hoshino, T Miyanaga, I Yamamoto & H Endo. (1999) The semiconductor–metal transition of liquid tellurium–arsenic mixtures. Journal of Non-Crystalline Solids 250-252, pages 458-462.
Crossref
Z. Dziuba, T. Przesławski, K. Dybko, M. Górska, J. Marczewski & K. Regiński. (1999) Negative magnetoresistance and impurity band conduction in an In0.53Ga0.47As/InP heterostructure. Journal of Applied Physics 85:9, pages 6619-6624.
Crossref
Yoshihiko Kobayashi, Satoru Murata, Kichizo Asai, J. M. Tranquada, G. Shirane & Kay Kohn. (1999) Magnetic and Transport Properties of LaCo 1- x Ni x O 3 -Comparison with La 1- x Sr x CoO 3 . Journal of the Physical Society of Japan 68:3, pages 1011-1017.
Crossref
Alexander Ehrlich. 1997. The Electrical Engineering Handbook,Second Edition. The Electrical Engineering Handbook,Second Edition.
M. Jaime, H. Hardner, M. B. Salamon, M. Rubinstein, P. Dorsey & D. Emin. (1997) Anomalous Hall effect in Gd-doped La2/3Ca1/3MnO3. Journal of Applied Physics 81:8, pages 4958-4960.
Crossref
M. Jaime, H. T. Hardner, M. B. Salamon, M. Rubinstein, P. Dorsey & D. Emin. (1997) Hall-Effect Sign Anomaly and Small-Polaron Conduction in . Physical Review Letters 78:5, pages 951-954.
Crossref
David Emin. (2011) Polaron Formation and Motion in Magnetic Solids. MRS Proceedings 494.
Crossref
H. Ikemoto, I. Yamamoto, T. Tsuzuki & H. Endo. (1996) The origin of the metallic nature for liquid Te. Journal of Non-Crystalline Solids 205-207, pages 347-351.
Crossref
O. Chauvet, D. Emin, L. Forro, T. L. Aselage & L. Zuppiroli. (1996) Spin susceptibility of boron carbides: Dissociation of singlet small bipolarons. Physical Review B 53:21, pages 14450-14457.
Crossref
C. E. Nebel, M. Rother, C. Summonte, M. Heintze & M. Stutzmann. (2011) Hall-Effect and Sign Properties in Hydrogenated Amorphous and Disordered Crystalline Silicon. MRS Proceedings 420.
Crossref
C.M. Fortmann. 1995. Plasma Deposition of Amorphous Silicon-Based Materials. Plasma Deposition of Amorphous Silicon-Based Materials 131 176 .
L Friedman. (1994) Sign and temperature dependence of the Hall effect of Bi 2 Sr 2 YCu 2 O 8 single crystals at compositions below that for metallic conduction . Journal of Physics: Condensed Matter 6:37, pages L553-L556.
Crossref
C. M. Fortmann. (1994) Atomic vibration mediated electronic transport in amorphous silicon. Applied Physics Letters 64:22, pages 3024-3026.
Crossref
David Emin & M.-N. Bussac. (1994) Disorder-induced small-polaron formation. Physical Review B 49:20, pages 14290-14300.
Crossref
André Moliton & Bruno Lucas. (2004) Propriétés électroniques dans les solides désordonnés. III. Les mécanismes de transport par saut faisant appel aux modèles des paires et à la conduction par polarons. Annales de Physique 19:3, pages 299-352.
Crossref
B.Y. Tong & J. Du. (1993) In search of a normal Hall effect in amorphous silicon. Journal of Non-Crystalline Solids 164-166, pages 453-456.
Crossref
C.E. Nebel & R.A. Street. (1993) Hall experiments and interpretation in a-Si:H and a-SiC:H. Journal of Non-Crystalline Solids 164-166, pages 449-452.
Crossref
R. Murri, N. Pinto & L. Schiavulli. (1993) Electronic-transport properties of unhydrogenated amorphous gallium arsenide. Il Nuovo Cimento D 15:5, pages 785-792.
Crossref
C. E. Nebel & R.A Street. (1993) Revealing Mysteries of Hall Experiments on a-Si:H and a-SiC:H. MRS Proceedings 297.
Crossref
M. Benzaquen, B. Belache & C. Blaauw. (1992) Electrical properties of Cd-doped and Mg-doped InP. Physical Review B 46:11, pages 6732-6738.
Crossref
R.J. Thorn. (1992) Conductivity, chemical equilibria and small polaron in oxide superconductor: YBa2Cu3O7−δ. Physica C: Superconductivity 190:3, pages 193-204.
Crossref
B. Movaghar & R. Cochrane. (2006) The Hall Effect in Amorphous Metals and Alloys. physica status solidi (b) 166:2, pages 311-338.
Crossref
N. Du, Y. T. Zhu, B. Y. Tong & S. K. Wong. (1990) Observation of normal Hall coefficient of amorphous Si thin films prepared by low-pressure chemical-vapor deposition. Physical Review B 41:2, pages 1251-1253.
Crossref
J. Kakalios. (1989) A physical interpretation of the Hall effect in amorphous semiconductors. Journal of Non-Crystalline Solids 114, pages 372-374.
Crossref
A J Fisher, W Hayes & D S Wallace. (1989) Polarons and solitons. Journal of Physics: Condensed Matter 1:33, pages 5567-5593.
Crossref
J. Kakalios. (2011) Metastable Electronic Effects in Amorphous Semiconductor Superlattices. MRS Proceedings 160.
Crossref
Harald Overhof & Peter ThomasHarald Overhof & Peter Thomas. 1989. Electronic Transport in Hydrogenated Amorphous Semiconductors. Electronic Transport in Hydrogenated Amorphous Semiconductors 39 61 .
E. K. Sichel, L. Greber & K. Wang. (1988) Hall effect in amorphous Si:H and amorphous Si:H/amorphous Ge:H superlattices. Applied Physics Letters 52:13, pages 1074-1076.
Crossref
Nevill F. Mott. (1987) Conduction at a mobility edge. Journal of Non-Crystalline Solids 97-98, pages 531-538.
Crossref
T.K Mitra, Ashok Chatterjee & Sukla Mukhopadhyay. (1987) Polarons. Physics Reports 153:2-3, pages 91-207.
Crossref
B. Pistoulet & G. Hamamdjian. (1987) Mixed conductivity and potential fluctuations in semi-insulating GaAs:Cr. Physical Review B 35:12, pages 6305-6317.
Crossref
N.F. Mott. (1987) Conduction bands in a non-crystalline environment. Journal of Non-Crystalline Solids 90:1-3, pages 1-8.
Crossref
C. Wood, D. Emin, R. S. Feigelson & I. D. R. Mackinnon. (2011) Electronic Transport Properties of Hot-Pressed B 6 Si . MRS Proceedings 97.
Crossref
A. N. Campbell, A. W. Mullendore, D. R. Tallant & C. Wood. (2011) Low-Carbon Boron Carbidestproduced by CVD. MRS Proceedings 97.
Crossref
N.F Mott. (1985) Pre-exponential factor in the conductivity of liquid and amorphous semiconductors. Journal of Non-Crystalline Solids 77-78, pages 115-120.
Crossref
E. Tousson & Z. Ovadyahu. (1985) Measurements of the hall coefficient in the vicinity of the anderson transition. Physics Letters A 109:4, pages 187-189.
Crossref
David Adler. 1985. Physical Properties of Amorphous Materials. Physical Properties of Amorphous Materials 5 103 .
Morrel H. Cohen. 1985. Physical Properties of Amorphous Materials. Physical Properties of Amorphous Materials 343 359 .
P. Nagels. 1985. Proceedings of the 17th International Conference on the Physics of Semiconductors. Proceedings of the 17th International Conference on the Physics of Semiconductors 837 840 .
B. Movaghar. 1985. Physics of Disordered Materials. Physics of Disordered Materials 399 412 .
Morrel H. Cohen, C. M. Soukoulis & E. N. Economou. 1985. Physics of Disordered Materials. Physics of Disordered Materials 305 326 .
David Adler. 1985. Physics of Disordered Materials. Physics of Disordered Materials 287 304 .
Morrel H. Cohen, E.N. Economou & Costas M. Soukoulis. (1984) Electron transport in amorphous semiconductors. Journal of Non-Crystalline Solids 66:1-2, pages 285-290.
Crossref
Vincenzo Augelli, Roberto Murri & Teresa Ligonzo. (1984) Hall mobility in doped Si:H, Cl films. Thin Solid Films 116:4, pages 311-315.
Crossref
Charles Wood & David Emin. (1984) Conduction mechanism in boron carbide. Physical Review B 29:8, pages 4582-4587.
Crossref
W. Beyer & H. Overhof. 1984. Hydrogenated Amorphous Silicon - Electronic and Transport Properties. Hydrogenated Amorphous Silicon - Electronic and Transport Properties 257 307 .
J. Dresner. 1984. Hydrogenated Amorphous Silicon - Electronic and Transport Properties. Hydrogenated Amorphous Silicon - Electronic and Transport Properties 193 205 .
Nevill Mott. 1984. The Physics of Hydrogenated Amorphous Silicon II. The Physics of Hydrogenated Amorphous Silicon II 169 193 .
Walter E. Spear & Peter G. LeComber. 1984. The Physics of Hydrogenated Amorphous Silicon I. The Physics of Hydrogenated Amorphous Silicon I 63 118 .
Vincenzo Augelli, Roberto Murri, Nicola Alba & Teresa Ligonzo. (1983) Hall mobility in doped and undoped amorphous Si:H,Cl films. Journal of Non-Crystalline Solids 59-60, pages 481-484.
Crossref
J. Dresner. (1983) Hall effect and hole transport in B-doped a-Si:H. Journal of Non-Crystalline Solids 58:2-3, pages 353-357.
Crossref
Dennis F. Baker & Robert H. Bragg. (1983) The electrical conductivity and Hall effect of glassy carbon. Journal of Non-Crystalline Solids 58:1, pages 57-69.
Crossref
Morrel H. Cohen, E. N. Economou & C. M. Soukoulis. (1983) Polaron Formation near a Mobility Edge. Physical Review Letters 51:13, pages 1202-1205.
Crossref
V. Augelli, R. Murri & T. Ligonzo. (1983) Hall mobility in undoped microcrystalline Si:H,Cl films. Applied Physics Letters 43:3, pages 266-267.
Crossref
Z. Dziuba. (2006) Impurity Band Conduction in HgTe. II. Theoretical Analysis. physica status solidi (b) 118:1, pages 319-326.
Crossref
Z. Dziuba. (2006) Impurity Band Conduction in HgTe I. Experimental Data. physica status solidi (b) 117:2, pages 531-540.
Crossref
W.E. Spear, G. Willeke & P.G. LeComber. (1983) Electronic properties of microcrystalline silicon prepared in the glow discharge plasma. Physica B+C 117-118, pages 908-913.
Crossref
H. Böttger & V. V. Bryksin. (2006) Hopping Conductivity in Ordered and Disordered Systems (III). physica status solidi (b) 113:1, pages 9-49.
Crossref
David Emin. (1982) Small polarons. Physics Today 35:6, pages 34-40.
Crossref
M Grunewald, P Thomas & D Wurtz. (1981) The sign anomaly of the Hall effect in amorphous tetrahedrally bonded semiconductors: a chemical-bond orbital approach. Journal of Physics C: Solid State Physics 14:28, pages 4083-4093.
Crossref
J. Dresner. (1980) Hall mobility for electrons in undoped a -Si:H . Applied Physics Letters 37:8, pages 742-744.
Crossref
A. R. Moore. (1980) Photoelectromagnetic effect in amorphous silicon. Applied Physics Letters 37:3, pages 327-330.
Crossref
Thomas E. Cross & Ronald Pethig. (2009) Microwave hall effect measurements on biopolymers. International Journal of Quantum Chemistry 18:S7, pages 385-395.
Crossref
DAVID EMIN. 1980. Polycrystalline and Amorphous Thin Films and Devices. Polycrystalline and Amorphous Thin Films and Devices 17 57 .
David Emin. 1980. The Hall Effect and Its Applications. The Hall Effect and Its Applications 281 298 .
P.G. Le Comber, W.E. Spear & D. Allan. (1979) Transport studies in doped amorphous silicon. Journal of Non-Crystalline Solids 32:1-3, pages 1-15.
Crossref
P. G. LeComber & W. E. Spear. 1985. Amorphous Semiconductors. Amorphous Semiconductors 251 285 .
P. Nagels. 1985. Amorphous Semiconductors. Amorphous Semiconductors 113 158 .
David Emin. (1977) Amorphous Semiconductors. Science 198:4320, pages 881-881.
Crossref
Limeng Shen, Xi Zhang, Huanming Wang, Jiafei Li & Gang Xiang. (2022) Structural, Magnetic and Magneto-Transport Properties of Mn-Doped Sige Thin Films. SSRN Electronic Journal.
Crossref

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