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The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics
Series 8
Volume 35, 1977 - Issue 3
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Correspondence

Constrictions in the stacking faults of dislocations in germanium

G. Packeiser Institut für Metallphysik, Universität Göttingen, Germany
&
P. Haasen Institut für Metallphysik, Universität Göttingen, Germany
Pages 821-827 | Received 07 Oct 1976, Published online: 13 Sep 2006

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Jacques Rabier. (2013) On the core structure of dislocations and the mechanical properties of silicon. Philosophical Magazine 93:1-3, pages 162-173.
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R. Bonnet, M. Loubradou, S. Youssef, J.-L. Rouvière & F. Fournel. (2009) Alternate dissociation of the screw dislocations in a (0 0 1) buried small-angle twist boundary in silicon. Philosophical Magazine 89:5, pages 413-434.
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S. Youssef & R. Bonnet. (2006) A dissociated dislocation in an ultrathin silicon plate. Philosophical Magazine 86:20, pages 3077-3088.
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K. Suzuki, M. Ichihara, S. Takeuchi, N. Ohtake, M. Yoshikawa, K. Hirabayashi & N. Kurihara. (1992) Electron microscopy studies of dislocations in diamond synthesized by a cvd method. Philosophical Magazine A 65:3, pages 657-664.
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S.-W. Chiang, C.B. Carter & D.L. Kohlstedt. (1980) Faulted dipoles in germanium A high-resolution transmission electron microscopy study. Philosophical Magazine A 42:1, pages 103-121.
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V.F. Petrenko & R.W. Whitworth. (1980) Charged dislocations and the plastic deformation of II-VI compounds. Philosophical Magazine A 41:5, pages 681-699.
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R.W. Whitworth. (1980) The influence of the choice of glide plane on the theory of the velocity of dislocations in ice. Philosophical Magazine A 41:4, pages 521-528.
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G. Packeiser. (1980) On the correlation of constrictions with jogs in dissociated dislocations in germanium. Philosophical Magazine A 41:4, pages 459-466.
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H. Föll & D. Ast. (1979) TEM observations on grain boundaries in sintered silicon. Philosophical Magazine A 40:5, pages 589-610.
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H. Föll & C.B. Carter. (1979) Direct TEM determination of intrinsic and extrinsic stacking fault energies of silicon. Philosophical Magazine A 40:4, pages 497-510.
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A. Bourret & J. Desseaux. (1979) The low-angle [011] tilt boundary in germanium II. Theoretical analysis of observed configurations and stability. Philosophical Magazine A 39:4, pages 419-431.
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A.M. Gómez. (1978) Comment on the use of 224 reflections with g . b = 0 for determining stacking faults widths. Philosophical Magazine A 37:3, pages 435-439.
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E.L. Hall & J.B. Vander Sande. (1978) On the nature of extended dislocations in deformed cadmium telluride. Philosophical Magazine A 37:1, pages 137-145.
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S. Shevchenko & A. Tereshchenko. (2007) Peculiarities of dislocation photoluminescence in germanium with quasi‐equilibrium dislocation structure. physica status solidi c 4:8, pages 2898-2902.
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D. B. Holt & B. G. Yacobi. 2009. Extended Defects in Semiconductors. Extended Defects in Semiconductors 163 411 .
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S. A. Shevchenko & A. N. Izotov. (2003) Dislocation-induced photoluminescence in silicon crystals of various impurity composition. Physics of the Solid State 45:2, pages 259-265.
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Alain Jacques, Frédéric Vallino, Francisco Serbena & Amand George. (2000) Dislocation multiplication in silicon at the onset of plasticity observed by in situ synchrotron x-ray topography . Journal of Physics: Condensed Matter 12:49, pages 10045-10058.
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B. Ya. Farber, S. Y. Yoon, K. P. D. Lagerlöf & A. H. Heuer. (1993) Microplasticity during High Temperature Indentation and the Peierls Potential in Sapphire (α-Al2O3) Single Crystals. Physica Status Solidi (a) 137:2, pages 485-498.
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H. Gottschalk. (1993) Precipitation of Copper Silicide on Glide Dislocations in Silicon at Low Temperature. Physica Status Solidi (a) 137:2, pages 447-461.
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V. I. Nikolaichick & I. I. Khodos. (1989) A review of the determination of dislocation parameters using strong- and weak-beam electron microscopy. Journal of Microscopy 155:2, pages 123-167.
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A. P. Filippov. (1988) The influence of impurities on the dislocation splitting in semiconductors. Physica Status Solidi (a) 110:1, pages 83-88.
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J Bonneville, B Escaig & J.L Martin. (1988) A study of cross-slip activation parameters in pure copper. Acta Metallurgica 36:8, pages 1989-2002.
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E. Nadgornyi. (1988) Dislocation dynamics and mechanical properties of crystals. Progress in Materials Science 31, pages 1-530.
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V. V. Aristov, I. E. Bondarenko, J. Heydenreich, T. I. Khodos, I. I. Snighireva, P. Werner, E. B. Yakimov & N. A. Yarykin. (1987) Electrical Properties and Defect Structure of Plastically Deformed Silicon Crystals Doped with Gold. Physica Status Solidi (a) 102:2, pages 687-695.
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A. George & J. Rabier. (1987) Dislocations and plasticity in semiconductors. I — Dislocation structures and dynamics. Revue de Physique Appliquée 22:9, pages 941-966.
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S. A. Shevchenko, I. I. Khodos & I. I. Snighireva. (1985) Dislocation Dissociation and Electrical Properties of Plastically Deformed Germanium Single Crystals. physica status solidi (a) 91:2, pages 523-531.
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Kinichi Masuda, Hirofumi Ushio & Kenichi Kojima. (1985) Effects of External Shear Stress on the Smallest Double Kink Nucleation Process in Si. Journal of the Physical Society of Japan 54:2, pages 598-603.
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H. J. Möller & U. Jendrich. 1984. Deformation of Ceramic Materials II. Deformation of Ceramic Materials II 25 35 .
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V. V. Aristov, M. N. Zolotukhin, V. V. Kveder, Yu. A. Osipyan, I. I. Snighireva & I. I. Khodos. (1983) The effect of annealing on the dislocation dissociation in plasticially deformed silicon. Physica Status Solidi (a) 76:2, pages 485-491.
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Wolfgang Schröter. 1983. Cohesive Properties of Semiconductors under Laser Irradiation. Cohesive Properties of Semiconductors under Laser Irradiation 458 482 .
I. E. Bondarenko, B. Ya. Farber, I. I. Khodos & V. I. Nikitenko. (2006) On splitting of dislocations at a reverse motion in germanium single crystals. Crystal Research and Technology 18:12, pages 1495-1498.
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L. S. Darken. (2011) The Characterization of Germanium and Silicon for Nuclear Radiation Detectors.. MRS Proceedings 16.
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C. B. Carter, J. S. Roberts & C. E. C. Wood. (1981) Glide of dissociated dislocations in III-V compounds. Applied Physics Letters 38:10, pages 805-807.
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H. Alexander. (2006) New results on dislocation motion in silicon and germanium. Kristall und Technik 16:2, pages 231-238.
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I. E. Bondarenko, V. G. Eremenko, V. I. Nikitenko & E. B. Yakimov. (1980) The effect of thermal treatment on the electrical activity and mobility of dislocations in Si. Physica Status Solidi (a) 60:2, pages 341-349.
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S.-W. Chiang, C.B. Carter & D.L. Kohlstedt. (1980) Constricted segments of faulted dipoles in germanium. Scripta Metallurgica 14:7, pages 803-807.
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Amand George & Georges Champier. (1980) On the cross-slip of isolated dislocations at the surface of silicon crystals. Scripta Metallurgica 14:4, pages 399-403.
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Wolfgang Schröter, Ernst Scheibe & Helmut Schoen. (2011) Energy Spectra Of Dislocations In Silicon And Germanium. Journal of Microscopy 118:1, pages 23-34.
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H.-J. Möller, H. Ewaldt & P. Haasen. (1979) Cross slip of single dissociated screw dislocations in silicon and germanium. Physica Status Solidi (a) 55:2, pages 469-478.
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M. Sato & K. Sumino. (1979) Motion of extended dislocations in silicon crystals observed by HVEM. Physica Status Solidi (a) 55:1, pages 297-306.
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