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The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics
Series 8
Volume 30, 1974 - Issue 1
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Original Articles

The nature of defects in n+ gallium arsenide

P. W. Hutchinson Department of Physical Metallurgy and Science of Materials, University of Birmingham, P.O. Box 363, Birmingham, B15 2TT, England
&
P. S. Dobson Department of Physical Metallurgy and Science of Materials, University of Birmingham, P.O. Box 363, Birmingham, B15 2TT, England
Pages 65-73 | Received 27 Feb 1974, Published online: 20 Aug 2006

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R.K. Ball, P.W. Hutchinson & P.S. Dobson. (1982) The defect structure of Te-doped GaAs after zinc diffusion. Philosophical Magazine A 46:6, pages 915-930.
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R.K. Ball, P.W. Hutchinson & P.S. Dobson. (1981) Formation of gallium interstitials during zinc diffusion into gallium arsenide. Philosophical Magazine A 43:5, pages 1299-1314.
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M. Umeno, H. Kawabe & K. Doi. (1979) HVEM investigations of crystal defects in S-doped LEC-GaP crystals. Philosophical Magazine A 39:2, pages 183-194.
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P.W. Hutchinson & P.S. Dobson. (1978) Preferential precipitation on dislocation loops in Te-doped gallium arsenide. Philosophical Magazine A 38:1, pages 15-23.
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J.B. Mullin, B.W. Straughan, C.M. H. Driscoll & A.F. W. Willoughby. (1975) The lattice larameter of GaAs and InP with reference to interfaces. C R C Critical Reviews in Solid State Sciences 5:4, pages 441-456.
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Articles from other publishers (45)

Osamu Ueda & Shigetaka Tomiya. 2021. Reliability of Semiconductor Lasers and Optoelectronic Devices. Reliability of Semiconductor Lasers and Optoelectronic Devices 177 238 .
N.A. Davletkildeev, M.M. Nukenov & N.V. Sologub. (2009) Phase composition of microdefects in heavily doped n-GaAs. Physica B: Condensed Matter 404:23-24, pages 4988-4991.
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D. T. J. Hurle. (1999) A comprehensive thermodynamic analysis of native point defect and dopant solubilities in gallium arsenide. Journal of Applied Physics 85:10, pages 6957-7022.
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J. Doerschel & U. Geissler. (1992) Characterization of extended defects in highly Te-doped 〈111〉 GaSb single crystals grown by the Czochralski technique. Journal of Crystal Growth 121:4, pages 781-789.
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M. Luysberg, W. Jäger, K. Urban, M. Schänzer, N.A. Stolwijk & H. Mehrer. (1992) Defect formation during zinc diffusion into GaAs. Materials Science and Engineering: B 13:2, pages 137-151.
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L.A. Charniy, A.N. Morozov, V.T. Bublik, K.D. Scherbachev, I.V. Stepantsova & V.M. Kaganer. (1992) Study of microdefects and their distribution in dislocation-free Si-doped HB GaAs by X-ray diffuse scattering on triple-crystal diffractometer. Journal of Crystal Growth 118:1-2, pages 163-175.
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L.A. Charniy, A.N. Morozov, K.D. Scherbachov, V.T. Bublik & I.V. Stepantsova. (1992) X-ray diffuse scattering identification of matrix As-rich microdefects in GaAs crystals. Journal of Crystal Growth 116:3-4, pages 369-377.
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T P Chen, L J Chen, T S Huang & Y D Guo. (1992) Transmission electron microscope investigation of dislocation loops in Si-doped GaAs crystals. Semiconductor Science and Technology 7:1A, pages A300-A303.
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A. Djemel, J. Castaing, N. Burle-Durbec & B. Pichaud. (1989) Dislocation multiplication in GaAs : inhibition by doping. Revue de Physique Appliquée 24:8, pages 779-793.
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D. G. Deppe & N. HolonyakJr.Jr.. (1988) Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures. Journal of Applied Physics 64:12, pages R93-R113.
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G. M. Pennock, F. W. Schapink & J. L. Weyher. (1988) Microdefects in sulphur doped GaAs. Journal of Materials Science Letters 7:4, pages 353-354.
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D. G. Deppe, N. HolonyakJr.Jr. & J. E. Baker. (1988) Sensitivity of Si diffusion in GaAs to column IV and VI donor species. Applied Physics Letters 52:2, pages 129-131.
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H.-J. Lim, H. J. von Bardeleben & J. C. Bourgoin. (1987) Study of defects in GaAs by differential thermal analysis. Journal of Applied Physics 62:7, pages 2738-2741.
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R. Fornari, P. Franzosi, G. Salviati, C. Ferrari & C. Ghezzi. (1985) A study of microdefects in n-type doped gaAs crystals using Cathodoluminescence and x-ray techniques. Journal of Crystal Growth 72:3, pages 717-725.
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Osamu Ueda, Kiyohide Wakao, Akio Yamaguchi, Shoji Isozumi & Satoshi Komiya. (1985) Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers. Journal of Applied Physics 57:5, pages 1523-1532.
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Osamu Ueda, Itsuo Umebu & Tsuyoshi Kotani. (1983) Transmission electron microscopic observation of defects in heavily doped LPE InGaAsP layers with Zn, Cd, Sn and Te. Journal of Crystal Growth 62:2, pages 329-342.
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G. T. Brown, B. Cockayne & W. R. MacEwan. (1983) The nature of prismatic dislocation loops in undoped InP. Journal of Electronic Materials 12:1, pages 93-106.
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P. W. Hutchinson, R. K. Ball, P. S. Dobson & P. Leigh. (1982) The defect structure of GaAs after selenium implantation through a Si3N4 layer. Journal of Materials Science Letters 1:11, pages 457-460.
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V Swaminathan. (1982) Defects in GaAs. Bulletin of Materials Science 4:4, pages 403-442.
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. (1997) The structure and mechanism of formation of platelets in natural type Ia diamond. Proceedings of the Royal Society of London. A. Mathematical and Physical Sciences 381:1780, pages 65-81.
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Osamu Ueda, Itsuo Umebu, Shigenobu Yamakoshi & Tsuyoshi Kotani. (1982) Nature of dark defects revealed in InGaAsP/InP double heterostructure light emitting diodes aged at room temperature. Journal of Applied Physics 53:4, pages 2991-2997.
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G. Jacob, J.P. Farges, C. Schémali, M. Duseaux, J. Hallais, W.J. Bartels & P.J. Roksnoer. (1982) Dislocations in GaAs. Journal of Crystal Growth 57:2, pages 245-258.
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P. W. Hutchinson & R. K. Ball. (1982) A study of the effects of annealing, zinc diffusion and copper diffusion on the defect structure of silicon-doped gallium arsenide. Journal of Materials Science 17:2, pages 406-416.
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R. T. Chen & W. G. Spitzer. (1981) Si-defect concentrations in heavily Si-DOPED GaAs: annealing-Induced changes-II. Journal of Electronic Materials 10:6, pages 1085-1129.
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R. K. Ball & P. W. Hutchinson. (1980) Defect structure and tetrahedral precipitates in sulphur-doped gallium phosphide. Journal of Materials Science 15:9, pages 2376-2384.
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A. G. Cullis, P. D. Augustus & D. J. Stirland. (1980) Arsenic precipitation at dislocations in GaAs substrate material. Journal of Applied Physics 51:5, pages 2556-2560.
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V. T. Bublik, M. G. Mil'vidskii & V. B. Osvenskii. (1980) Nature and singularities in the behavior of point defects in doped single crystals of A3B5 compounds. Soviet Physics Journal 23:1, pages 1-13.
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D. T. J. Hurle & B. Cockayne. 1980. Characterization of Crystal Growth Defects by X-Ray Methods. Characterization of Crystal Growth Defects by X-Ray Methods 46 72 .
Taibun Kamejima, Junji Matsui, Yasuo Seki & Hisao Watanabe. (1979) Transmission electron microscopy study of microdefects in dislocation-free GaAs and InP crystals. Journal of Applied Physics 50:5, pages 3312-3321.
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D.T.J. Hurle. (1979) Solubility and point defect-dopant interactions in GaAs —I. Journal of Physics and Chemistry of Solids 40:8, pages 627-637.
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P.W. Hutchinson, P.S. Dobson, B. Wakefield & S. O'Hara. (1978) The generation of point defects in GaAs by electron-hole recombination at dislocations. Solid-State Electronics 21:11-12, pages 1413-1417.
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B. Hughes & G. H. Narayanan. (1978) On annealing-induced prismatic dislocation loops and electrical changes in heavily Te-doped GaAs. Physica Status Solidi (a) 46:2, pages 627-637.
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D. J. Stirland, P. D. Augustus & B. W. Straughan. (1978) The identification of saucer-pit (S-pit) defects in GaAs. Journal of Materials Science 13:3, pages 657-665.
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W. R. Wagner. (1978) Tellurium-induced defects in LPE Al0.36Ga0.64As. Journal of Applied Physics 49:1, pages 173-180.
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Tsuyoshi Kotani, Osamu Ueda, Kenzo Akita, Yorimitsu Nishitani, Toshihiro Kusunoki & Osamu Ryuzan. (1977) Direct observation of defects in Si-doped and Ge-doped Ga0.9Al0.1As epitaxial layers by transmission electron microscopy. Journal of Crystal Growth 38:1, pages 85-92.
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Peter Wasilewski. 1977. Origin of Thermoremanent Magnetization. Origin of Thermoremanent Magnetization 123 145 .
J. B. Mullin, B. W. Straughan, C. M. H. Driscoll & A. F. W. Willoughby. (1976) Lattice superdilation phenomena in doped GaAs. Journal of Applied Physics 47:6, pages 2584-2587.
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V. D. Verner, S. K. Maksimov & D. K. Nichugovskii. (1976) The nature of defects of crystalline structure in GaAs heavily doped with Te. Physica Status Solidi (a) 33:2, pages 755-763.
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L.F. Mondolfo. 1976. Aluminum Alloys. Aluminum Alloys 11 55 .
A. H. AgajanianA. H. Agajanian. 1976. Semiconducting Devices. Semiconducting Devices 467 491 .
L. I. Datsenko, A. N. Gureev & M. I. Starchik. (1975) Dynamical Scattering of X-Rays in Gallium Arsenide Crystals Containing Dislocation Loops. Physica Status Solidi (a) 32:2, pages 549-556.
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M. Dupuy & D. Lafeuille. (1975) Characterization of defects in GaP and GaAsP graded heterojunctions by transmission electron microscopy. Journal of Crystal Growth 31, pages 244-249.
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P. W. Hutchinson & P. S. Dobson. (1975) Interstitial condensation in n+ GaAs. Journal of Materials Science 10:9, pages 1636-1641.
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P. W. Hutchinson, P. S. Dobson, S. O’Hara & D. H. Newman. (1975) Defect structure of degraded heterojunction GaAlAs−GaAs lasers. Applied Physics Letters 26:5, pages 250-252.
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M. DUPUY & D. LAFEUILLE. 1975. Vapour Growth and Epitaxy. Vapour Growth and Epitaxy 244 249 .

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