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Original Articles

C60 Films Formed by Ionized Cluster Beam Deposition: Structure and Doping by Ion Implantation

Pages 469-478 | Published online: 27 Feb 2008

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Read on this site (1)

Y. Shi, C.M. Xiong, Y.X. He, H.X. Guo & X.J. Fan. (1996) The Rectification Studies on the P+-Ion Implanted C60/Si Films. Fullerene Science and Technology 4:5, pages 963-975.
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Articles from other publishers (3)

K. L. Narayanan & M. Yamaguchi. (2001) Phosphorous ion implantation in C60 for the photovoltaic applications. Journal of Applied Physics 89:12, pages 8331-8335.
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Y. Shi, C. M. Xiong, X. S. Wang, C. H. Lei, H. X. Guo & X. J. Fan. (1996) Structure and electrical characteristics of ICBD C60 films. Applied Physics A: Materials Science and Processing 63:4, pages 353-357.
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Y. Shi, X.J. Fan, H.X. Guo & Q. Fu. (1996) Raman scattering studies on the C60 films deposited by ionized cluster beam deposition (ICBD) technique. Solid State Communications 99:6, pages 445-449.
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