Citations (32)
Keep up to date with the latest research on this topic with citation updates for this article.
Articles from other publishers (32)
Haonan Li, Cong Li, Hailiang Huang, Guodong Hao & Fei Wang. (2024) A multiferroic coupling mechanism in the polar interface region of GaN-ZnO heterojunction: A first-principle study. Journal of Magnetism and Magnetic Materials 589, pages 171566.
Crossref
Crossref
Dhaifallah Almalawi, Sergei Lopatin, Paul R. Edwards, Bin Xin, Ram C. Subedi, Mohammed A. Najmi, Fatimah Alreshidi, Alessandro Genovese, Daisuke Iida, Nimer Wehbe, Boon S. Ooi, Kazuhiro Ohkawa, Robert W. Martin & Iman S. Roqan. (2023) Simultaneous Growth Strategy of High-Optical-Efficiency GaN NWs on a Wide Range of Substrates by Pulsed Laser Deposition. ACS Omega.
Crossref
Crossref
Yuzhu Wu, Chengmin Chen, Jiaoxian Yu, Guodong Wang, Shouzhi Wang, Lei Liu, Guangxia Liu, Xiangang Xu & Lei Zhang. (2023) Optimizing HVPE flow field to achieve GaN crystal uniform growth. Journal of Crystal Growth 614, pages 127214.
Crossref
Crossref
Tao Xu, Ziqi Tang, Ziyou Zhou & Bing Zhou. (2023) Simulation Optimization of AlGaN/GaN SBD with Field Plate Structures and Recessed Anode. Micromachines 14:6, pages 1121.
Crossref
Crossref
Zeinab Shaban, Vitaly Z Zubialevich, Emmanouil A Amargianitakis, Fatih Bilge Atar, Peter James Parbrook, Zhi Li & Brian Corbett. (2023) InGaN/AlInN interface with enhanced holes to improve photoelectrochemical etching and GaN device release. Semiconductor Science and Technology 38:5, pages 055015.
Crossref
Crossref
Łukasz Janicki, Ryszard Korbutowicz, Mariusz Rudziński, Paweł Piotr Michałowski, Sebastian Złotnik, Miłosz Grodzicki, Sandeep Gorantla, Jarosław Serafińczuk, Detlef Hommel & Robert Kudrawiec. (2022) Thermal oxidation of [0001] GaN in water vapor compared with dry and wet oxidation: Oxide properties and impact on GaN. Applied Surface Science 598, pages 153872.
Crossref
Crossref
Oscar Miguel Rodríguez-Benítez, Mario Ponce-Silva, Juan Antonio Aquí-Tapia, Abraham Claudio-Sánchez, Luis Gerardo Vela-Váldes, Ricardo Eliu Lozoya-Ponce & Claudia Cortés-García. (2020) Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor Devices. Electronics 9:11, pages 1982.
Crossref
Crossref
Krzysztof Górecki & Paweł Górecki. (2020) Compact electrothermal model of laboratory made GaN Schottky diodes. Microelectronics International 37:2, pages 95-102.
Crossref
Crossref
Daniel F. Jaramillo-Cabanzo, Jacek B. Jasinski & Mahendra K. Sunkara. (2019) Liquid Phase Epitaxy of Gallium Nitride. Crystal Growth & Design 19:11, pages 6577-6585.
Crossref
Crossref
Pawel Gorecki, Krzysztof Gorecki, Ryszard Kisiel & Marcin Mysliwiec. (2019) Thermal Parameters of Monocrystalline GaN Schottky Diodes. IEEE Transactions on Electron Devices 66:5, pages 2132-2138.
Crossref
Crossref
V.M. Bermudez. (2017) The fundamental surface science of wurtzite gallium nitride. Surface Science Reports 72:4, pages 147-315.
Crossref
Crossref
J.A. FreitasJr.Jr., J.C. Culbertson, N.A. Mahadik, E.R. Glaser, T. Sochacki, M. Bockowski, S.K. Lee & K.B. Shim. (2016) Incorporation of pervasive impurities on HVPE GaN growth directions. Journal of Crystal Growth 456, pages 101-107.
Crossref
Crossref
Aiman bin Mohd HALIL, Keisuke TSUCHIDA, Masakatsu MAEDA & Yasuo TAKAHASHI. (2015) Ni Nano Level Thin Film Formation on p-GaN and Improvement of Electrical Properties by Hydrogen Release Enhancement. Journal of Smart Processing 4:2, pages 109-114.
Crossref
Crossref
Aiman bin Mohd Halil, Keisuke Tsuchida, Masakatsu Maeda & Yasuo Takahashi. (2015) Improvement of Electrical Properties of p-type GaN and Au Contact Interface. QUARTERLY JOURNAL OF THE JAPAN WELDING SOCIETY 33:2, pages 84s-87s.
Crossref
Crossref
Jordan D. Greenlee, Boris N. Feigelson, Travis J. Anderson, Marko J. Tadjer, Jennifer K. Hite, Michael A. Mastro, Charles R. EddyJr.Jr., Karl D. Hobart & Francis J. Kub. (2014) Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties. Journal of Applied Physics 116:6.
Crossref
Crossref
S. J. Wilkins, T. Paskova & A. Ivanisevic. (2013) Effect of etching with cysteamine assisted phosphoric acid on gallium nitride surface oxide formation. Journal of Applied Physics 114:6, pages 064907.
Crossref
Crossref
Yong Lei, Hongbiao Shi, Hai Lu, Dunjun Chen, Rong Zhang & Youdou Zheng. (2013) Field plate engineering for GaN-based Schottky barrier diodes. Journal of Semiconductors 34:5, pages 054007.
Crossref
Crossref
Masakatsu Maeda, Takao Yamasaki & Yasuo Takahashi. (2012) Effect of interfacial reaction on electrical conduction across the interface between n-type gallium nitride and contact materials. Journal of Physics: Conference Series 379, pages 012020.
Crossref
Crossref
Matthew S. Makowski, Dmitry Y. Zemlyanov, Jason A. Lindsey, Jonathan C. Bernhard, Evan M. Hagen, Burke K. Chan, Adam A. Petersohn, Matthew R. Medow, Lindsay E. Wendel, Dafang Chen, Jamie M. Canter & Albena Ivanisevic. (2011) Covalent attachment of a peptide to the surface of gallium nitride. Surface Science 605:15-16, pages 1466-1475.
Crossref
Crossref
A. Wolos, Z. Wilamowski, M. Piersa, W. Strupinski, B. Lucznik, I. Grzegory & S. Porowski. (2011) Properties of metal-insulator transition and electron spin relaxation in GaN:Si. Physical Review B 83:16.
Crossref
Crossref
J.A. FreitasJr.Jr., M.A. Mastro, E.A. Imhoff, M.J. Tadjer, C.R. EddyJr.Jr. & F.J. Kub. (2010) Thick homoepitaxial GaN with low carrier concentration for high blocking voltage. Journal of Crystal Growth 312:18, pages 2616-2619.
Crossref
Crossref
Vladimir I Litvinov. (2010) Resonant Tunneling in III-Nitrides. Proceedings of the IEEE 98:7, pages 1249-1254.
Crossref
Crossref
K. Çınar, N. Yıldırım, C. Coşkun & A. Turut. (2009) Temperature dependence of current-voltage characteristics in highly doped Ag/p-GaN/In Schottky diodes. Journal of Applied Physics 106:7, pages 073717.
Crossref
Crossref
Arul Chakkaravarthi Arjunan, Deepika Singh, H.T. Wang, F. Ren, Purushottam Kumar, R.K. Singh & S.J. Pearton. (2008) Improved free-standing GaN Schottky diode characteristics using chemical mechanical polishing. Applied Surface Science 255:5, pages 3085-3089.
Crossref
Crossref
Hadis Morkoç. 2008. Handbook of Nitride Semiconductors and Devices. Handbook of Nitride Semiconductors and Devices
349
707
.
Hadis Morkoç. 2008. Handbook of Nitride Semiconductors and Devices. Handbook of Nitride Semiconductors and Devices
1
119
.
J. J. Zhou, R. L. Jiang, B. Wen, L. Y. Liang, X. L. Ji, B. Shen, R. Zhang & Y. D. Zheng. (2004) Influence of AlGaN/GaN interface polarization fields on the properties of photoconductive detectors. Journal of Applied Physics 95:10, pages 5925-5927.
Crossref
Crossref
K.P. Lee, A.M. Dabiran, P.P. Chow, A. Osinsky, S.J. Pearton & F. Ren. (2004) Temperature dependence of pnp GaN/InGaN HBT performance. Solid-State Electronics 48:1, pages 37-41.
Crossref
Crossref
K.P. Lee, A. Dabiran, A. Osinsky, P.P. Chow, S.J. Pearton & F. Ren. (2003) RF performance of GaN-based npn bipolar transistors. Solid-State Electronics 47:9, pages 1501-1506.
Crossref
Crossref
K.P Lee, F Ren, S.J Pearton, A.M Dabiran & P.P Chow. (2003) Effects of base structure on performance of GaN-based heterojunction bipolar transistors. Solid-State Electronics 47:6, pages 1031-1036.
Crossref
Crossref
K.P. Lee, F. Ren, S.J. Pearton, A.M. Dabiran & P.P. Chow. (2003) Simulations of InGaN-base heterojunction bipolar transistors. Solid-State Electronics 47:6, pages 1009-1014.
Crossref
Crossref
K.P. Lee, A. Dabiran, P.P. Chow, S.J. Pearton & F. Ren. (2003) Influence of layer doping and thickness on predicted performance of NPN AlGaN/GaN HBTs. Solid-State Electronics 47:6, pages 969-974.
Crossref
Crossref