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Original Report

Enhanced Electrical Activation in In-Implanted Si_0.35Ge_0.65 by C Co-Doping

Ruixing FengDepartment of Electronic Materials Engineering, Australian National University, CanberraACT 0200, AustraliaCorrespondence[email protected]
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Felipe KremerDepartment of Electronic Materials Engineering, Australian National University, CanberraACT 0200, AustraliaView further author information

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David J. SprousterNuclear Science and Technology Department, Brookhaven National Laboratory, Upton, NY11973, USAView further author information

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Sahar MirzaeiDepartment of Electronic Materials Engineering, Australian National University, CanberraACT 0200, AustraliaView further author information

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Stefan DecosterKU Leuven, Instituut voor Kern-en Stralingsfysica, 3001Leuven, BelgiumView further author information

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Chris J. GloverAustralian Synchrotron, 800 Blackburn Road, Clayton, Victoria3168, AustraliaView further author information

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Scott A. MedlingDepartment of Electronic Materials Engineering, Australian National University, CanberraACT 0200, AustraliaView further author information

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John Lundsgaard HansenDepartment of Physics and Astronomy, Aarhus University, DK-8000Aarhus C, DenmarkView further author information

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Arne Nylandsted-LarsenDepartment of Physics and Astronomy, Aarhus University, DK-8000Aarhus C, DenmarkView further author information

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Salvy P. RussoDepartment of Applied Physics, School of Applied Sciences, RMIT University, Melbourne3001, AustraliaView further author information

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Mark C. RidgwayDepartment of Electronic Materials Engineering, Australian National University, CanberraACT 0200, AustraliaView further author information