Citations (144)
Keep up to date with the latest research on this topic with citation updates for this article.
Articles from other publishers (144)
Gieop Lee, An-Na Cha, Sea Cho, Jeong Soo Chung, Young-Boo Moon & Jun-Seok Ha. (2023)
Heteroepitaxial Growth of Thick α-Ga
2
O
3
Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy
. Crystal Growth & Design.
Crossref
Crossref
Sandeep K. Chaudhuri, Ritwik Nag, Iftikhar Ahmad & Krishna C. Mandal. (2023)
Alpha Particle Detection Using Highly Rectifying Ni/Ga
2
O
3
/4H-SiC Heteroepitaxial MOS Junction
. IEEE Transactions on Electron Devices 70:12, pages 6439-6445.
Crossref
Crossref
Swapnodoot Ganguly, Krishna Nama Manjunatha & Shashi Paul. (2023) Investigation on the Mist Intensity to Deposit Gallium Oxide Thin Films by Mist Chemical Vapor Deposition. physica status solidi (RRL) – Rapid Research Letters.
Crossref
Crossref
Usman Ul Muazzam, Rangarajan Muralidharan, Srinivasan Raghavan & Digbijoy N. Nath. (2023) Investigation of Optical functions, sub-bandgap transitions, and Urbach tail in the absorption spectra of Ga2O3 thin films deposited using mist-CVD. Optical Materials 145, pages 114373.
Crossref
Crossref
Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Timothy Jinsoo Yoo, Honggyu Kim, Andrei Osinsky, Fikadu Alema & Stephen J. Pearton. (2023) Vertical NiO/β-Ga2O3 rectifiers grown by metalorganic chemical vapor deposition. Journal of Vacuum Science & Technology A 41:5.
Crossref
Crossref
Hanchi Xia, Yongtao Yang, Jia Cao, Fan Zhang, Yang Zhang & Zhenping Wu. (2023) Growth rate control and phase diagram of wafer-scale Ga2O3 films by MOCVD. Vacuum 215, pages 112388.
Crossref
Crossref
Anoop Kumar Singh, Chao-Chun Yen, Kai-Ping Chang & Dong-Sing Wuu. (2023) Structural and photoluminescence properties of Co-Sputtered p-type Zn-doped β-Ga2O3 thin films on sapphire substrates. Journal of Luminescence 260, pages 119836.
Crossref
Crossref
Wenyong Feng, Shujian Chen, Zedong Lin, Zimin Chen, Gang Wang, Xiaobo Chen & Yanli Pei. (2023) Activating the κ-Ga2O3 surface for epitaxy growth and dopant incorporation using low chemical-hardness metal overlayers. Journal of Alloys and Compounds 951, pages 169793.
Crossref
Crossref
Amanda Langørgen, Ymir Kalmann Frodason, Robert Karsthof, Holger von Wenckstern, Ingvild Julie Thue Jensen, Lasse Vines & Marius Grundmann. (2023)
Defect level in
κ
-Ga2O3 revealed by thermal admittance spectroscopy
. Journal of Applied Physics 134:1.
Crossref
Crossref
Fedor Hrubišák, Kristína Hušeková, Xiang Zheng, Alica Rosová, Edmund Dobročka, Milan Ťapajna, Matej Mičušík, Peter Nádaždy, Fridrich Egyenes, Javad Keshtkar, Eva Kováčová, James W. Pomeroy, Martin Kuball & Filip Gucmann. (2023) Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices. Journal of Vacuum Science & Technology A 41:4.
Crossref
Crossref
A. F. M. Anhar Uddin Bhuiyan, Zixuan Feng, Lingyu Meng & Hongping Zhao. (2023)
Tutorial: Metalorganic chemical vapor deposition of
β
-Ga2O3 thin films, alloys, and heterostructures
. Journal of Applied Physics 133:21.
Crossref
Crossref
Mohammad Karbalaei Akbari, Nasrin Siraj Lopa & Serge Zhuiykov. (2023) Atomic Layer Deposition of Ultra-Thin Crystalline Electron Channels for Heterointerface Polarization at Two-Dimensional Metal-Semiconductor Heterojunctions. Coatings 13:6, pages 1041.
Crossref
Crossref
Liyuan Cheng, Hezhi Zhang, Wenhui Zhang & Hongwei Liang. (2023)
Investigation of β-Ga
2
O
3
thick films grown on c-plane sapphire via carbothermal reduction
. Journal of Semiconductors 44:6, pages 062804.
Crossref
Crossref
Mohi Uddin Jewel, Samiul Hasan, Scott R. Crittenden, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç & Iftikhar Ahmad. (2023)
Phase Stabilized MOCVD Growth of β‐Ga
2
O
3
Using SiO
x
on c‐Plane Sapphire and AlN/Sapphire Template
. physica status solidi (a) 220:11.
Crossref
Crossref
Junhee Lee, Lakshay Gautam, Ferechteh H. Teherani, Eric V. Sandana, Philippe Bove, David J. Rogers & Manijeh Razeghi. (2023)
Investigation of Enhanced Heteroepitaxy and Electrical Properties in
κ
‐Ga
2
O
3
Due to Interfacing with
β
‐Ga
2
O
3
Template Layers
. physica status solidi (a) 220:8.
Crossref
Crossref
Mohi Uddin Jewel, Samiul Hasan, Scott R. Crittenden, Vitaliy S. Avrutin, Ümit Özgür, Hadis Morkoç & Iftikhar Ahmad. (2023) Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD. Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD.
Chao-Chun Yen, Anoop Kumar Singh, Po-Wei Wu, Hsin-Yu Chou & Dong-Sing Wuu. (2023) Interface engineering in epitaxial growth of sputtered β-Ga2O3 films on Si substrates via TiN (111) buffer layer for Schottky barrier diodes. Materials Today Advances 17, pages 100348.
Crossref
Crossref
Filip Gucmann, Peter Nádaždy, Kristína Hušeková, Edmund Dobročka, Juraj Priesol, Fridrich Egyenes, Alexander Šatka, Alica Rosová & Milan Ťapajna. (2023) Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD. Materials Science in Semiconductor Processing 156, pages 107289.
Crossref
Crossref
Ha Young Kang, Min Jae Yeom, Jeong Yong Yang, Yoonho Choi, Jaeyong Lee, Changkun Park, Geonwook Yoo & Roy Byung Kyu Chung. (2023) Epitaxial κ-Ga2O3/GaN heterostructure for high electron-mobility transistors. Materials Today Physics 31, pages 101002.
Crossref
Crossref
Jianguo Zhang, Wei Wang, Simiao Wu, Zhiming Geng, Jinfu Zhang, Li Chen, Ningtao Liu, Xuejun Yan, Wenrui Zhang & Jichun Ye. (2023) Exploratory phase stabilization in heteroepitaxial gallium oxide films by pulsed laser deposition. Journal of Alloys and Compounds 935, pages 168123.
Crossref
Crossref
F Egyenes, F Gucmann, A Rosová, E Dobročka, K Hušeková, F Hrubišák, J Keshtkar & M Ťapajna. (2022)
Conductance anisotropy of MOCVD-grown α-Ga
2
O
3
films caused by (010) β-Ga
2
O
3
filament-shaped inclusions
. Journal of Physics D: Applied Physics 56:4, pages 045102.
Crossref
Crossref
Saidjafarzoda Ilhom, Adnan Mohammad, John Grasso, Brian G. Willis, Ali K. Okyay & Necmi Biyikli. (2022)
Reducing the β-Ga
2
O
3
Epitaxy Temperature to 240 °C via Atomic Layer Plasma Processing
. ACS Applied Electronic Materials 5:1, pages 335-343.
Crossref
Crossref
Seong-Ho Cho, Yun-Ji Shin, Seong-Min Jeong, Se-Hun Kwon & Si-Young Bae. (2023)
Two-step growth of κ-Ga
2
O
3
thin films on 4H-SiC substrates with temperature-varied buffer layers using mist chemical vapor deposition
. Japanese Journal of Applied Physics 62:1, pages 015508.
Crossref
Crossref
Yan Zuo, Qian Feng, Tao Zhang, Xusheng Tian, Wenji Li, Jiale Li, Chunfu Zhang, Jincheng Zhang & Yue Hao. (2022) A Novel Method for Growing α-Ga2O3 Films Using Mist-CVD Face-to-face Heating Plates. Nanomaterials 13:1, pages 72.
Crossref
Crossref
Rajib Saha, Sangita Bhowmick, Madhuri Mishra, Ankita Sengupta, Sanatan Chattopadhyay & Subhananda Chakrabarti. (2022)
Impact of deposition temperature on crystalline quality, oxygen vacancy, defect modulations and hetero-interfacial properties of RF sputtered deposited Ga
2
O
3
thin films on Si substrate
. Journal of Physics D: Applied Physics 55:50, pages 505101.
Crossref
Crossref
Hyung-Jin Choi, Jun Young Lee, Soo Young Jung, Ruiguang Ning, Min-Seok Kim, Sung-Jin Jung, Sung Ok Won, Seung-Hyub Baek & Ji-Soo Jang. (2022)
Epitaxial Growth of β-Ga
2
O
3
Thin Films on Si with YSZ Buffer Layer
. ACS Omega 7:48, pages 43603-43608.
Crossref
Crossref
Luke A. M. Lyle. (2022) Critical review of Ohmic and Schottky contacts to β-Ga2O3. Journal of Vacuum Science & Technology A 40:6.
Crossref
Crossref
A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hsien-Lien Huang, Lingyu Meng, Jinwoo Hwang & Hongping Zhao. (2022) MOCVD growth and band offsets of κ-phase Ga2O3 on c-plane sapphire, GaN- and AlN-on-sapphire, and (100) YSZ substrates. Journal of Vacuum Science & Technology A 40:6.
Crossref
Crossref
Jianying Yue, Xueqiang Ji, Shan Li, Zuyong Yan, Xiaohui Qi, Peigang Li & Weihua Tang. (2022)
High thickness uniformity of 2-in. wafer-scale
β
-Ga2O3 films grown by MOCVD and photoelectrical properties
. Journal of Vacuum Science & Technology A 40:6.
Crossref
Crossref
Ray-Hua Horng, Dong-Sing Wuu, Po-Liang Liu, Apoorva Sood, Fu-Gow Tarntair, Yu-Hsuan Chen, Singh Jitendra Pratap & Ching-Lien Hsiao. (2022) Growth mechanism and characteristics of β-Ga2O3 heteroepitaxailly grown on sapphire by metalorganic chemical vapor deposition. Materials Today Advances 16, pages 100320.
Crossref
Crossref
Abhay Kumar Mondal, Revathy Deivasigamani, Loh Kean Ping, Muhammad Aniq Shazni Mohammad Haniff, Boon Tong Goh, Ray Hua Horng & Mohd Ambri Mohamed. (2022)
Heteroepitaxial Growth of an Ultrathin β-Ga
2
O
3
Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling
. ACS Omega 7:45, pages 41236-41245.
Crossref
Crossref
Hadi Ebrahimi-Darkhaneh, Mahsa Shekarnoush, Josefina Arellano-Jimenez, Rodolfo Rodriguez, Luigi Colombo, Manuel Quevedo-Lopez & Sanjay K. Banerjee. (2022) High-quality Mg-doped p-type Ga2O3 crystalline thin film by pulsed laser. Journal of Materials Science: Materials in Electronics 33:31, pages 24244-24259.
Crossref
Crossref
Ha Young Kang, Yoonho Choi, Kyungjin Pyeon, Tae Hoon Lee & Roy Byung Kyu Chung. (2022) Experimental and theoretical investigation of the effect of Sn on κ-Ga2O3 growth. Journal of Materials Science 57:42, pages 19882-19891.
Crossref
Crossref
Yuxia Zhu, Yuewen Li, Xiangqian Xiu, Xinyu Sun, Zili Xie, Tao Tao, Peng Chen, Bin Liu, Jiandong Ye, Rong Zhang & Youdou Zheng. (2022)
Preparation of β-Ga
2
O
3
films on off-angled sapphire substrates and solar-blind ultraviolet photodetectors
. Journal of Physics D: Applied Physics 55:42, pages 424001.
Crossref
Crossref
Jung-Lung Chiang, Bharath Kumar Yadlapalli, Mu-I Chen & Dong-Sing Wuu. (2022) A Review on Gallium Oxide Materials from Solution Processes. Nanomaterials 12:20, pages 3601.
Crossref
Crossref
Luke A. M. Lyle, Stephen D. House, Judith C. Yang & Lisa M. Porter. (2022)
Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga
2
O
3
Interface
. ACS Applied Electronic Materials 4:9, pages 4471-4481.
Crossref
Crossref
Gang Yang, Pedro Rojo Romeo, Aleksandra Apostoluk & Bertrand Vilquin. (2022) First principles study on the lattice thermal conductivity of α-phase Ga2O3. Journal of Vacuum Science & Technology A 40:5.
Crossref
Crossref
Suhyeong Cha & Sung-Min Hong. (2022)
Study of
β
-Ga
2
O
3
-Based Thin-Channel MODFET Devices Using a Coupled Drift-Diffusion/Multisubband BTE Solver
. IEEE Transactions on Electron Devices 69:9, pages 4870-4876.
Crossref
Crossref
Yu Pei, Lingyan Liang, Xiaolong Wang, Zhenhua Wang, Hengbo Zhang, Junyan Ren & Hongtao Cao. (2022)
Low-Temperature-Crystallized Ga
2
O
3
Thin Films and Their TFT-Type Solar-Blind Photodetectors
. The Journal of Physical Chemistry Letters 13:31, pages 7243-7251.
Crossref
Crossref
Nafiseh Badiei, Afshin Tarat & Lijie Li. (2022)
Synthesis of
β
-Ga2O3 thin film assisted by microwave annealing
. AIP Advances 12:8.
Crossref
Crossref
Zhengwei Chen, Kunpeng Ge, Dongdong Meng & Xu Chen. (2022) Pure-phase Ga2O3 films were deposited on sapphire substrates by radio frequency magnetron sputtering. Materials Letters 320, pages 132385.
Crossref
Crossref
Yong Pan. (2022)
First‐principles investigation of the influence of point defect on the electronic and optical properties of
α‐Ga
2
O
3
. International Journal of Energy Research 46:9, pages 13070-13078.
Crossref
Crossref
Mahitosh Biswas & Hiroyuki Nishinaka. (2022)
Thermodynamically metastable
α
-,
ε
- (or
κ
-), and
γ
-Ga2O3: From material growth to device applications
. APL Materials 10:6.
Crossref
Crossref
Hong Qian, Xiaodong Zhang, Yongjian Ma, Li Zhang, Tiwei Chen, Xing Wei, Wenbo Tang, Xin Zhou, Boyuan Feng, Yaming Fan, Yuanping Sun & Baoshun Zhang. (2022) Quasi-vertical ε-Ga2O3 solar-blind photodetectors grown on p-Si substrates with Al2O3 buffer layer by metalorganic chemical vapor deposition. Vacuum 200, pages 111019.
Crossref
Crossref
Usman Ul Muazzam, Prasad S Chavan, Rangarajan Muralidharan, Srinivasan Raghavan & Digbijoy N Nath. (2022)
Optical properties of mist CVD grown κ-Ga
2
O
3
. Semiconductor Science and Technology 37:5, pages 055011.
Crossref
Crossref
Anisha Kalra, Usman Ul Muazzam, R. Muralidharan, Srinivasan Raghavan & Digbijoy N. Nath. (2022) The road ahead for ultrawide bandgap solar-blind UV photodetectors. Journal of Applied Physics 131:15.
Crossref
Crossref
Sunjae Kim, Hyeon Woo Kim, Hyeong-Yun Kim, Dae-Woo Jeon, Sung Beom Cho & Ji-Hyeon Park. (2022)
A pre-reaction suppressing strategy for α-Ga
2
O
3
halide vapor pressure epitaxy using asymmetric precursor gas flow
. CrystEngComm 24:16, pages 3049-3056.
Crossref
Crossref
Kentaro Kaneko, Kazuyuki Uno, Riena Jinno & Shizuo Fujita. (2022) Prospects for phase engineering of semi-stable Ga2O3 semiconductor thin films using mist chemical vapor deposition. Journal of Applied Physics 131:9.
Crossref
Crossref
Yu-Hsuan Hsu, Wan-Yu Wu, Kun-Lin Lin, Yu-Hsuan Chen, Yi-Hsin Lin, Po-Liang Liu, Ching-Lien Hsiao & Ray-Hua Horng. (2022)
ε-Ga
2
O
3
Grown on
c
-Plane Sapphire by MOCVD with a Multistep Growth Process
. Crystal Growth & Design 22:3, pages 1837-1845.
Crossref
Crossref
Wenrui Zhang, Jianguo Zhang, Li Chen, Wei Wang, Tan Zhang, Ningtao Liu, Tao Xu, Hongxin Yang & Jichun Ye. (2022) Non-equilibrium epitaxy of metastable polymorphs of ultrawide-bandgap gallium oxide. Applied Physics Letters 120:7.
Crossref
Crossref
Kunyao Jiang, Jingyu Tang, Matthew J. Cabral, Anna Park, Liuxin Gu, Robert F. Davis & Lisa M. Porter. (2022) Layered phase composition and microstructure of κ-Ga2O3-dominant heteroepitaxial films grown via MOCVD. Journal of Applied Physics 131:5.
Crossref
Crossref
V. V. Kidalov, A. F. Dyadenchuk, V. P. Kladko, O. I. Gudymenko, M. P. Derhachov, S. O. Popov, O. O. Sushko & Vitali V. Kidalov. (2022)
Structure and Electrical Properties of β-Ga
2
O
3
Films Obtained by Radio Frequency Magnetron Sputtering on Porous Silicon
. ECS Journal of Solid State Science and Technology 11:2, pages 025004.
Crossref
Crossref
Antonella Parisini, Alessio Bosio, Hans Jurgen von Bardeleben, Juan Jimenez, Shabnam Dadgostar, Maura Pavesi, Andrea Baraldi, Salvatore Vantaggio & Roberto Fornari. (2022) Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers. Materials Science in Semiconductor Processing 138, pages 106307.
Crossref
Crossref
Sun-Young Park, Minh-Tan Ha, Kyoung-Ho Kim, Le Van Lich, Yun-Ji Shin, Seong-Min Jeong, Se-Hun Kwon & Si-Young Bae. (2022) Enhanced thickness uniformity of large-scale α-Ga2O3 epilayers grown by vertical hot-wall mist chemical vapor deposition. Ceramics International 48:4, pages 5075-5082.
Crossref
Crossref
Sevastian Shapenkov, Oleg Vyvenko, Vladimir Nikolaev, Sergei Stepanov, Alexei Pechnikov, Mikhail Scheglov & Georgiy Varygin. (2021)
Polymorphism and Faceting in Ga
2
O
3
Layers Grown by HVPE at Various Gallium‐to‐Oxygen Ratios
. physica status solidi (b) 259:2.
Crossref
Crossref
Sakal Pech, Sara Kim & Nam-Hoon Kim. (2022) Magnetron Sputter-Deposited β-Ga2O3 Films on c-Sapphire Substrate: Effect of Rapid Thermal Annealing Temperature on Crystalline Quality. Coatings 12:2, pages 140.
Crossref
Crossref
A. M. Smirnov, A. V. Kremleva, Sh. Sh. Sharofidinov & A. E. Romanov. (2022) Misfit stress relaxation in wide bandgap semiconductor heterostructures with trigonal and hexagonal crystal structure. Journal of Applied Physics 131:2.
Crossref
Crossref
Puteri Haslinda Megat Abdul Hedei, Zainuriah Hassan & Hock Jin Quah. (2022) Growth of polycrystalline gallium oxide films in stagnant oxygen stream ambient. Journal of Materials Research and Technology 16, pages 139-151.
Crossref
Crossref
Jingan Zhou, Hong Chen, Kai Fu & Yuji Zhao. (2021) Gallium oxide-based optical nonlinear effects and photonics devices. Journal of Materials Research 36:23, pages 4832-4845.
Crossref
Crossref
Dinesh Thapa, Jeffrey Lapp, Isiaka Lukman & Leah Bergman. (2021) Ultra-wide bandgap β-Ga2O3 films: Optical, phonon, and temperature response properties. AIP Advances 11:12.
Crossref
Crossref
Geoffrey Tse. (2021) The electronic, optical, elastic, and mechanical properties of triclinic Ga2O3 with density functional theory. Computational Condensed Matter 29, pages e00593.
Crossref
Crossref
Ha Young Kang, Habin Kang, Eunhye Lee, Gyeong Ryul Lee & Roy Byung Kyu Chung. (2021)
Sn-Induced Phase Stabilization and Enhanced Thermal Stability of κ-Ga
2
O
3
Grown by Mist Chemical Vapor Deposition
. ACS Omega 6:46, pages 31292-31298.
Crossref
Crossref
Matteo Bosi, Luca Seravalli, Piero Mazzolini, Francesco Mezzadri & Roberto Fornari. (2021)
Thermodynamic and Kinetic Effects on the Nucleation and Growth of ε/κ- or β-Ga
2
O
3
by Metal–Organic Vapor Phase Epitaxy
. Crystal Growth & Design 21:11, pages 6393-6401.
Crossref
Crossref
Nataliya Vorobyeva, Marina Rumyantseva, Vadim Platonov, Darya Filatova, Artem Chizhov, Artem Marikutsa, Ivan Bozhev & Alexander Gaskov. (2021) Ga2O3(Sn) Oxides for High-Temperature Gas Sensors. Nanomaterials 11:11, pages 2938.
Crossref
Crossref
Benjamin M. Janzen, Piero Mazzolini, Roland Gillen, Vivien F. S. Peltason, Linus P. Grote, Janina Maultzsch, Roberto Fornari, Oliver Bierwagen & Markus R. Wagner. (2021)
Comprehensive Raman study of orthorhombic κ/ε-Ga
2
O
3
and the impact of rotational domains
. Journal of Materials Chemistry C 9:40, pages 14175-14189.
Crossref
Crossref
Jinho Bae, Ji-Hyeon Park, Dae-Woo Jeon & Jihyun Kim. (2021) Self-powered solar-blind α-Ga2O3 thin-film UV-C photodiode grown by halide vapor-phase epitaxy. APL Materials 9:10.
Crossref
Crossref
Loh Kean Ping, Dilla Duryha Berhanuddin, Abhay Kumar Mondal, P. Susthitha Menon & Mohd Ambri Mohamed. (2021) Properties and perspectives of ultrawide bandgap Ga2O3 in optoelectronic applications. Chinese Journal of Physics 73, pages 195-212.
Crossref
Crossref
Yuxia Zhu, Xiangqian Xiu, Fei Cheng, Yuewen Li, Zili Xie, Tao Tao, Peng Chen, Bin Liu, Rong Zhang & You-Dou Zheng. (2021) Growth and nitridation of β-Ga2O3 thin films by Sol-Gel spin-coating epitaxy with post-annealing process. Journal of Sol-Gel Science and Technology 100:1, pages 183-191.
Crossref
Crossref
Yeong Je Jeong, Jeong Yong Yang, Chan Ho Lee, Ryubin Park, Gyeongryul Lee, Roy Byung Kyu Chung & Geonwook Yoo. (2021) Fluorine-based plasma treatment for hetero-epitaxial β-Ga2O3 MOSFETs. Applied Surface Science 558, pages 149936.
Crossref
Crossref
Marius Grundmann, Tillmann Stralka, Michael Lorenz, Susanne Selle, Christian Patzig & Thomas Höche. (2021)
Plastic strain relaxation and alloy instability in epitaxial corundum-phase (Al,Ga)
2
O
3
thin films on
r
-plane Al
2
O
3
. Materials Advances 2:13, pages 4316-4322.
Crossref
Crossref
Pooja Punetha & Piyush Jaiswal. (2021) Microwave Irradiation Assisted Synthesis of Gallium Aluminum Oxide Using Metal Acetylacetonate Precursors, Peculiar Observations and Safety Guidelines for Young Scientists. IOP Conference Series: Materials Science and Engineering 1166:1, pages 012020.
Crossref
Crossref
A. M. Smirnov, A. V. Kremleva, Sh. Sh. Sharofidinov, V. E. Bugrov & A. E. Romanov. (2021) Misfit Stress Relaxation in α-Ga2O3/α-Al2O3 Heterostructures via Formation of Misfit Dislocations. Physics of the Solid State 63:6, pages 924-931.
Crossref
Crossref
Xulong Chu, Zeng Liu, Shaohui Zhang, Peigang Li & Weihua Tang. (2021)
Photoresponsive characteristics of EFG-grown iron-doped (100) Ga
2
O
3
substrate with low dark current
. Physica Scripta 96:6, pages 065801.
Crossref
Crossref
Luke A. M. Lyle, Tyson C. Back, Cynthia T. Bowers, Andrew J. Green, Kelson D. Chabak, Donald L. Dorsey, Eric R. Heller & Lisa M. Porter. (2021)
Electrical and chemical analysis of Ti/Au contacts to
β
-Ga
2
O
3
. APL Materials 9:6, pages 061104.
Crossref
Crossref
Hitoshi Takane, Kentaro Kaneko, Yuichi Ota & Shizuo Fujita. (2021)
Initial nucleation scheme of Ga
2
O
3
on (0001) sapphire by mist CVD for the growth of α-phase
. Japanese Journal of Applied Physics 60:5, pages 055501.
Crossref
Crossref
Jinho Bae, Dae-Woo Jeon, Ji-Hyeon Park & Jihyun Kim. (2021)
High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga
2
O
3
. Journal of Vacuum Science & Technology A 39:3, pages 033410.
Crossref
Crossref
Luke A. M. Lyle, Kunyao Jiang, Elizabeth V. Favela, Kalyan Das, Andreas Popp, Zbigniew Galazka, Guenter Wagner & Lisa M. Porter. (2021)
Effect of metal contacts on (100) β-Ga
2
O
3
Schottky barriers
. Journal of Vacuum Science & Technology A 39:3, pages 033202.
Crossref
Crossref
Celesta S. Chang, Nicholas Tanen, Vladimir Protasenko, Thaddeus J. Asel, Shin Mou, Huili Grace Xing, Debdeep Jena & David A. Muller. (2021)
γ
-phase inclusions as common structural defects in alloyed
β
-(Al
x
Ga1−
x
)2O3 and doped
β
-Ga2O3 films
. APL Materials 9:5.
Crossref
Crossref
Tatsuya Yasuoka, Li Liu, Tamako Ozaki, Kanta Asako, Yuna Ishikawa, Miyabi Fukue, Giang T. Dang & Toshiyuki Kawaharamura. (2021) The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition. AIP Advances 11:4.
Crossref
Crossref
Junhee Lee, Honghyuk Kim, Lakshay Gautam & Manijeh Razeghi. (2021) Highly Conductive Co-Doped Ga2O3:Si-In Grown by MOCVD. Coatings 11:3, pages 287.
Crossref
Crossref
Xiaoyu Tian & Yushen Liu. (2021)
Van der Waals heterojunction ReSe
2
/WSe
2
polarization-resolved photodetector
. Journal of Semiconductors 42:3, pages 032001.
Crossref
Crossref
Tao Zhang, Yifan Li, Qian Feng, Yachao Zhang, Jing Ning, Chunfu Zhang, Jincheng Zhang & Yue Hao. (2021) Effects of growth pressure on the characteristics of the β-Ga2O3 thin films deposited on (0001) sapphire substrates. Materials Science in Semiconductor Processing 123, pages 105572.
Crossref
Crossref
Ji Hun Um, Byoung Su Choi, Dae Hwi Jeong, Hyun-Ung Choi, Sungu Hwang, Dae-Woo Jeon, Jin Kon Kim & Hyun Cho. (2021) Chlorine‐Based High Density Plasma Etching of α-Ga2O3 Epitaxy Layer. Electronic Materials Letters 17:2, pages 142-147.
Crossref
Crossref
Minh‐Tan Ha, Kyoung‐Ho Kim, Yun‐Ji Shin, Seong‐Min Jeong & Si‐Young Bae. (2021) Leidenfrost Motion of Water Microdroplets on Surface Substrate: Epitaxy of Gallium Oxide via Mist Chemical Vapor Deposition. Advanced Materials Interfaces 8:6.
Crossref
Crossref
Francesco Di Quarto, Andrea Zaffora, Francesco Di Franco & Monica Santamaria. (2021) A Generalized Semiempirical Approach to the Modeling of the Optical Band Gap of Ternary Al-(Ga, Nb, Ta, W) Oxides Containing Different Alumina Polymorphs. Inorganic Chemistry 60:3, pages 1419-1435.
Crossref
Crossref
Dangpo Wang, Jianing Li, Anning Jiao, Xinchuang Zhang, Xiaoli Lu, Xiaohua Ma & Yue Hao. (2021) Atomically control of surface morphology in Ga2O3 epi-layers with high doping activation ratio. Journal of Alloys and Compounds 855, pages 157296.
Crossref
Crossref
Su Yeon Cha, Dongwoo Kim, Hojoon Lim, Bongjin Simon Mun, Do Young Noh & Hyon Chol Kang. (2021) Characterization of non-stoichiometric Ga2O3-x thin films grown by radio-frequency powder sputtering. Ceramics International 47:3, pages 3238-3243.
Crossref
Crossref
Max Kneiß, Philipp Storm, Anna Hassa, Daniel Splith, Holger von Wenckstern, Michael Lorenz & Marius Grundmann. (2020)
Epitaxial Growth of
κ
‐(Al
x
Ga
1−
x
)
2
O
3
Layers and Superlattice Heterostructures up to
x
= 0.48 on Highly Conductive Al‐Doped ZnO Thin‐Film Templates by Pulsed Laser Deposition
. physica status solidi (b) 258:2.
Crossref
Crossref
Xiaohu Hou, Yanni Zou, Mengfan Ding, Yuan Qin, Zhongfang Zhang, Xiaolan Ma, Pengju Tan, Shunjie Yu, Xuanzhe Zhou, Xiaolong Zhao, Guangwei Xu, Haiding Sun & Shibing Long. (2020)
Review of polymorphous Ga
2
O
3
materials and their solar-blind photodetector applications
. Journal of Physics D: Applied Physics 54:4, pages 043001.
Crossref
Crossref
S Bin Anooz, R Grüneberg, T-S Chou, A Fiedler, K Irmscher, C Wouters, R Schewski, M Albrecht, Z Galazka, W Miller, J Schwarzkopf & A Popp. (2020)
Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga
2
O
3
thin films grown by MOVPE
. Journal of Physics D: Applied Physics 54:3, pages 034003.
Crossref
Crossref
Junhee Lee, Honghyuk Kim, Lakshay Gautam, Kun He, Xiaobing Hu, Vinayak Dravid & Manijeh Razeghi. (2021) Study of Phase Transition in MOCVD Grown Ga2O3 from κ to β Phase by Ex Situ and In Situ Annealing. Photonics 8:1, pages 17.
Crossref
Crossref
Yuewen Li, Xiangqian Xiu, Wanli Xu, Liying Zhang, Zili Xie, Tao Tao, Peng Chen, Bin Liu, Rong Zhang & Youdou Zheng. (2020)
Microstructural analysis of heteroepitaxial β-Ga
2
O
3
films grown on (0001) sapphire by halide vapor phase epitaxy
. Journal of Physics D: Applied Physics 54:1, pages 014003.
Crossref
Crossref
Xiaolong Zhao, Mengfan Ding, Haiding Sun & Shibing Long. 2021. Ultrawide Bandgap Semiconductors. Ultrawide Bandgap Semiconductors
101
151
.
Armin Barthel, Joseph Roberts, Mari Napari, Martin Frentrup, Tahmida Huq, András Kovács, Rachel Oliver, Paul Chalker, Timo Sajavaara & Fabien Massabuau. (2020) Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering. Micromachines 11:12, pages 1128.
Crossref
Crossref
Duncan R. Sutherland, Aine Boyer Connolly, Maximilian Amsler, Ming-Chiang Chang, Katie Rose Gann, Vidit Gupta, Sebastian Ament, Dan Guevarra, John M. Gregoire, Carla P. Gomes, R. Bruce van Dover & Michael O. Thompson. (2020) Optical Identification of Materials Transformations in Oxide Thin Films. ACS Combinatorial Science 22:12, pages 887-894.
Crossref
Crossref
Chun-Ying Huang, Guan-Yu Lin, Yen-Yang Liu, Fu-Yuan Chang, Pei-Te Lin, Feng-Hsuan Hsu, Yu-Hsiang Peng, Zi-Ling Huang, Tai-Yuan Lin & Jyh-Rong Gong. (2020) On the response of gamma irradiation on atomic layer deposition-grown β-Ga2O3 films and Au-β-Ga2O3-Au deep ultraviolet solar-blind photodetectors. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 38:6.
Crossref
Crossref
Junyu Lai, Md Nazmul Hasan, Edward Swinnich, Zhao Tang, Sang-Ho Shin, Munho Kim, Peihong Zhang & Jung-Hun Seo. (2020)
Flexible crystalline β-Ga
2
O
3
solar-blind photodetectors
. Journal of Materials Chemistry C 8:42, pages 14732-14739.
Crossref
Crossref
Yidan Wei, Chaoming Liu, Hsu‐Sheng Tsai, Yanqing Zhang, Chunhua Qi, Guoliang Ma, Tianqi Wang & Mingxue Huo. (2020)
Prediction of the Abnormal Properties in Monolayer α‐Al
x
Ga
2−
x
O
3
. Advanced Theory and Simulations 3:11.
Crossref
Crossref
A V Almaev, V I Nikolaev, S I Stepanov, A I Pechnikov, A V Chikiryaka, N N Yakovlev, V M Kalygina, V V Kopyev & E V Chernikov. (2020)
Hydrogen influence on electrical properties of Pt-contacted
α
-Ga
2
O
3
/
ϵ
-Ga
2
O
3
structures grown on patterned sapphire substrates
. Journal of Physics D: Applied Physics 53:41, pages 414004.
Crossref
Crossref
Shijie Li, Chen Yang, Jin Zhang, Linpeng Dong, Changlong Cai, Haifeng Liang & Weiguo Liu. (2020) Tunable Optical Properties of Amorphous-Like Ga2O3 Thin Films Deposited by Electron-Beam Evaporation with Varying Oxygen Partial Pressures. Nanomaterials 10:9, pages 1760.
Crossref
Crossref
Pingfan Ning, Jona Grümbel, Jürgen Bläsing, Rüdiger Goldhahn, Dae-Woo Jeon & Martin Feneberg. (2020)
Lattice vibrations and optical properties of α-Ga
2
O
3
films grown by halide vapor phase epitaxy
. Semiconductor Science and Technology 35:9, pages 095001.
Crossref
Crossref
Arnab Mondal, Manoj K Yadav & Ankush Bag. (2020) Transition from thin film to nanostructure in low pressure chemical vapor deposition growth of β-Ga2O3: Impact of metal gallium source. Thin Solid Films 709, pages 138234.
Crossref
Crossref
K. Mudiyanselage, M.A. Nadeem, H.A. Raboui & H. Idriss. (2020) Growth, characterization, and stability testing of epitaxial MgO (100) on GaAs (100). Surface Science 699, pages 121625.
Crossref
Crossref
M. Bosi, P. Mazzolini, L. Seravalli & R. Fornari. (2020)
Ga
2
O
3
polymorphs: tailoring the epitaxial growth conditions
. Journal of Materials Chemistry C 8:32, pages 10975-10992.
Crossref
Crossref
Yaolin Cheng, Yu Xu, Zhe Li, Jiaqi Zhang, Dazheng Chen, Qian Feng, Shengrui Xu, Hong Zhou, Jincheng Zhang, Yue Hao & Chunfu Zhang. (2020) Heteroepitaxial growth of α-Ga2O3 thin films on a-, c- and r-plane sapphire substrates by low-cost mist-CVD method. Journal of Alloys and Compounds 831, pages 154776.
Crossref
Crossref
Sevastian Shapenkov, Oleg Vyvenko, Evgeny Ubyivovk, Oleg Medvedev, Georgiy Varygin, Andrey Chikiryaka, Alexei Pechnikov, Mikhail Scheglov, Sergei Stepanov & Vladimir Nikolaev. (2020)
Halide Vapor Phase Epitaxy α‐ and ε‐Ga
2
O
3
Epitaxial Films Grown on Patterned Sapphire Substrates
. physica status solidi (a) 217:14.
Crossref
Crossref
Nidhin Kurian Kalarickal, Zhanbo Xia, Joe F. McGlone, Yumo Liu, Wyatt Moore, Aaron R. Arehart, Steven A. Ringel & Siddharth Rajan. (2020)
High electron density
β
-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer
. Journal of Applied Physics 127:21.
Crossref
Crossref
Luke A. M. Lyle, Serdal Okur, Venkata S. N. Chava, Mathew L. Kelley, Robert F. Davis, Gary S. Tompa, M. V. S. Chandrashekhar, Andrew B. Greytak & Lisa M. Porter. (2020) Characterization of Epitaxial β-(Al,Ga,In)2O3-Based Films and Applications as UV Photodetectors. Journal of Electronic Materials 49:6, pages 3490-3498.
Crossref
Crossref
S. Bin Anooz, R. Grüneberg, C. Wouters, R. Schewski, M. Albrecht, A. Fiedler, K. Irmscher, Z. Galazka, W. Miller, G. Wagner, J. Schwarzkopf & A. Popp. (2020)
Step flow growth of
β
-Ga2O3 thin films on vicinal (100)
β
-Ga2O3 substrates grown by MOVPE
. Applied Physics Letters 116:18.
Crossref
Crossref
M. Kneiß, P. Storm, A. Hassa, D. Splith, H. von Wenckstern, M. Lorenz & M. Grundmann. (2020)
Growth, structural and optical properties of coherent
κ
-(Al
x
Ga1−
x
)2O3/
κ
-Ga2O3 quantum well superlattice heterostructures
. APL Materials 8:5.
Crossref
Crossref
J.G. Hao, T.C. Ma, X.H. Chen, Y. Kuang, L. Li, J. Li, F.-F. Ren, S.L. Gu, H.H. Tan, C. Jagadish & J.D. Ye. (2020) Phase tailoring and wafer-scale uniform hetero-epitaxy of metastable-phased corundum α-Ga2O3 on sapphire. Applied Surface Science 513, pages 145871.
Crossref
Crossref
Philipp Schurig, Fabian Michel, Andreas Beyer, Kerstin Volz, Martin Becker, Angelika Polity & Peter J. Klar. (2020)
Progress in Sputter Growth of
β
‐Ga
2
O
3
by Applying Pulsed‐Mode Operation
. physica status solidi (a) 217:10.
Crossref
Crossref
Ming-Ming Fan, Ying-Jie Lu, Kang-Li Xu, Yan-Xia Cui, Ling Cao & Xiu-Yan Li. (2020) Growth and characterization of Sn-doped β-Ga2O3 thin films by chemical vapor deposition using solid powder precursors toward solar-blind ultraviolet photodetection. Applied Surface Science 509, pages 144867.
Crossref
Crossref
Matthew D. McCluskey. (2020) Point defects in Ga2O3. Journal of Applied Physics 127:10.
Crossref
Crossref
Thorsten Schultz, Max Kneiß, Philipp Storm, Daniel Splith, Holger von Wenckstern, Marius Grundmann & Norbert Koch. (2020)
Band Offsets at κ-([Al,In]
x
Ga
1–
x
)
2
O
3
/MgO Interfaces
. ACS Applied Materials & Interfaces 12:7, pages 8879-8885.
Crossref
Crossref
Virginia D. Wheeler, Neeraj Nepal, David R. Boris, Syed B. Qadri, Luke O. Nyakiti, Andrew Lang, Andrew Koehler, Geoffrey Foster, Scott G. Walton, Charles R. EddyJr.Jr. & David J. Meyer. (2020)
Phase Control of Crystalline Ga
2
O
3
Films by Plasma-Enhanced Atomic Layer Deposition
. Chemistry of Materials 32:3, pages 1140-1152.
Crossref
Crossref
Xiaoli Liu & Chee-Keong Tan. (2020)
First-principle investigation of monoclinic (Al
x
In
y
Ga
1−
x
−
y
)
2
O
3
quaternary alloys
. Semiconductor Science and Technology 35:2, pages 025023.
Crossref
Crossref
V. I. Nikolaev, S. I. Stepanov, A. I. Pechnikov, S.V. Shapenkov, M. P. Scheglov, A.V. Chikiryaka & O. F. Vyvenko. (2020)
HVPE Growth and Characterization of ε-Ga
2
O
3
Films on Various Substrates
. ECS Journal of Solid State Science and Technology 9:4, pages 045014.
Crossref
Crossref
Lay Boon Cheah, Rozana Aina Maulat Osman & P. Poopalan. Ga2O3 thin films by sol-gel method its optical properties. Ga2O3 thin films by sol-gel method its optical properties.
Yao Yao, Robert F. Davis & Lisa M. Porter. 2020. Gallium Oxide. Gallium Oxide
171
184
.
Hiroyuki Nishinaka. 2020. Gallium Oxide. Gallium Oxide
243
255
.
Shizuo Fujita. 2020. Gallium Oxide. Gallium Oxide
231
241
.
Rajib Saha, Subhrajit Sikdar, Basudev Nag Chowdhury, Anupam Karmakar & Sanatan Chattopadhyay. (2019) Catalyst-modified vapor-liquid-solid (VLS) growth of single crystalline β-Gallium Oxide (Ga2O3) thin film on Si-substrate. Superlattices and Microstructures 136, pages 106316.
Crossref
Crossref
J.W. Roberts, P.R. Chalker, B. Ding, R.A. Oliver, J.T. Gibbon, L.A.H. Jones, V.R. Dhanak, L.J. Phillips, J.D. Major & F.C.-P. Massabuau. (2019) Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition. Journal of Crystal Growth 528, pages 125254.
Crossref
Crossref
J Moloney, O Tesh, M Singh, J W Roberts, J C Jarman, L C Lee, T N Huq, J Brister, S Karboyan, M Kuball, P R Chalker, R A Oliver & F C-P Massabuau. (2019)
Atomic layer deposited
α
-Ga
2
O
3
solar-blind photodetectors
. Journal of Physics D: Applied Physics 52:47, pages 475101.
Crossref
Crossref
V I Nikolaev, A I Pechnikov, V V Nikolaev, M P Scheglov, A V Chikiryaka, S I Stepanov, O S Medvedev, S V Shapenkov, E V Ubyivovk & O F Vyvenko. (2019)
HVPE growth of α- and ε-Ga
2
O
3
on patterned sapphire substrates
. Journal of Physics: Conference Series 1400:5, pages 055049.
Crossref
Crossref
T. C. Ma, X. H. Chen, Y. Kuang, L. Li, J. Li, F. Kremer, F.-F. Ren, S. L. Gu, R. Zhang, Y. D. Zheng, H. H. Tan, C. Jagadish & J. D. Ye. (2019)
On the origin of dislocation generation and annihilation in
α
-Ga2O3 epilayers on sapphire
. Applied Physics Letters 115:18.
Crossref
Crossref
M. Kneiß, A. Hassa, D. Splith, C. Sturm, H. von Wenckstern, M. Lorenz & M. Grundmann. (2019)
Epitaxial stabilization of single phase
κ
-(In
x
Ga1−
x
)2O3 thin films up to
x
= 0.28 on c-sapphire and
κ
-Ga2O3(001) templates by tin-assisted VCCS-PLD
. APL Materials 7:10.
Crossref
Crossref
An-Na Cha, Seungwan Bang, Hokyun Rho, Hyojung Bae, Dae-Woo Jeon, Jin-Woo Ju, Soon-Ku Hong & Jun-Seok Ha. (2019)
Effects of nanoepitaxial lateral overgrowth on growth of
α
-Ga2O3 by halide vapor phase epitaxy
. Applied Physics Letters 115:9.
Crossref
Crossref
Ji-Hyeon Park, Ryan McClintock & Manijeh Razeghi. (2019)
Ga
2
O
3
metal-oxide-semiconductor field effect transistors on sapphire substrate by MOCVD
. Semiconductor Science and Technology 34:8, pages 08LT01.
Crossref
Crossref
A. I. Pechnikov, S. I. Stepanov, A. V. Chikiryaka, M. P. Scheglov, M. A. Odnobludov & V. I. Nikolaev. (2019) Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy. Semiconductors 53:6, pages 780-783.
Crossref
Crossref
Yuewei Zhang, Fikadu Alema, Akhil Mauze, Onur S. Koksaldi, Ross Miller, Andrei Osinsky & James S. Speck. (2019) MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature. APL Materials 7:2.
Crossref
Crossref
J. H. Leach, K. Udwary, J. Rumsey, G. Dodson, H. Splawn & K. R. Evans. (2019) Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films. APL Materials 7:2.
Crossref
Crossref
M. Kneiß, A. Hassa, D. Splith, C. Sturm, H. von Wenckstern, T. Schultz, N. Koch, M. Lorenz & M. Grundmann. (2019) Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality. APL Materials 7:2.
Crossref
Crossref
Patrick H CareyIVIV, Jiancheng Yang, Fan Ren, Ribhu Sharma, Mark Law & Stephen J. Pearton. (2019)
Comparison of Dual-Stack Dielectric Field Plates on β-Ga
2
O
3
Schottky Rectifiers
. ECS Journal of Solid State Science and Technology 8:7, pages Q3221-Q3225.
Crossref
Crossref
Ribhu Sharma, Erin E. Patrick, M. E. Law, F. Ren & S. J. Pearton. (2019)
Optimization of Edge Termination Techniques for β-Ga
2
O
3
Schottky Rectifiers
. ECS Journal of Solid State Science and Technology 8:12, pages Q234-Q239.
Crossref
Crossref
Jiancheng Yang, Gregory J. Koller, Chaker Fares, F. Ren, S. J. Pearton, Jinho Bae, Jihyun Kim & David J. Smith. (2019)
60
Co Gamma Ray Damage in Homoepitaxial β-Ga
2
O
3
Schottky Rectifiers
. ECS Journal of Solid State Science and Technology 8:7, pages Q3041-Q3045.
Crossref
Crossref
Tongchuan Ma, Xuanhu Chen, Fangfang Ren, Shunming Zhu, Shulin Gu, Rong Zhang, Youdou Zheng & Jiandong Ye. (2019)
Heteroepitaxial growth of thick
α
-Ga
2
O
3
film on sapphire (0001) by MIST-CVD technique
. Journal of Semiconductors 40:1, pages 012804.
Crossref
Crossref
Xiangqian Xiu, Liying Zhang, Yuewen Li, Zening Xiong, Rong Zhang & Youdou Zheng. (2019)
Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga
2
O
3
. Journal of Semiconductors 40:1, pages 011805.
Crossref
Crossref
Hoki Son & Dae-Woo Jeon. (2019) Optimization of the growth temperature of α-Ga2O3 epilayers grown by halide vapor phase epitaxy. Journal of Alloys and Compounds 773, pages 631-635.
Crossref
Crossref
Roberto Fornari. 2019. Gallium Oxide. Gallium Oxide
3
30
.
S. J. Pearton, Fan Ren, Marko Tadjer & Jihyun Kim. (2018) Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS. Journal of Applied Physics 124:22.
Crossref
Crossref
Dae-Woo Jeon, Hoki Son, Jonghee Hwang, A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, S. J. Pearton & In-Hwan Lee. (2018) Electrical properties, structural properties, and deep trap spectra of thin α-Ga2O3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates. APL Materials 6:12.
Crossref
Crossref
Y. Arata, H. Nishinaka, D. Tahara & M. Yoshimoto. (2018)
Heteroepitaxial growth of single-phase ε-Ga
2
O
3
thin films on
c
-plane sapphire by mist chemical vapor deposition using a NiO buffer layer
. CrystEngComm 20:40, pages 6236-6242.
Crossref
Crossref