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Materials Research Letters Volume 11, 2023 - Issue 4
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Original Reports

Harnessing defects for high-performance MoS2 tunneling field-effect transistors

Juan Lyua School of Physical Science and Technology, Inner Mongolia University, Hohhot, People’s Republic of ChinaORCID Iconhttps://orcid.org/0000-0002-7676-4854View further author information
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Jian Gonga School of Physical Science and Technology, Inner Mongolia University, Hohhot, People’s Republic of ChinaCorrespondence[email protected]
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HuangLong Lib Department of Precision Instrument, Center for Brain Inspired Computing Research, Tsinghua University, Beijing, People’s Republic of ChinaCorrespondence[email protected]
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Pages 266-273 | Received 30 Jun 2022, Published online: 16 Nov 2022

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