Germanium gate hydrogen-terminated diamond field effect transistor with Al₂O₃ dielectric layer

Zhang Minghuia Key Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi, ChinaView further author information

Wang Weia Key Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi, ChinaCorrespondence[email protected]
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Wen Fenga Key Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi, ChinaView further author information

Lin Fanga Key Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi, ChinaView further author information

Chen Genqianga Key Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi, ChinaView further author information

Wang Feia Key Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi, ChinaView further author information

He Shia Key Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi, ChinaView further author information

Wang Yanfenga Key Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi, ChinaView further author information

Fan Shuweia Key Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi, ChinaView further author information

Bu Renana Key Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi, ChinaView further author information

Min Taib State Key Laboratory for Mechanical Behavior of Materials, Center for Spintronics and Quantum System, School of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi, ChinaView further author information

Yu Cuic National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang, Hebei, ChinaView further author information

Wang Hongxinga Key Laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi, ChinaView further author information

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Germanium gate hydrogen-terminated diamond field effect transistor with Al₂O₃ dielectric layer

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Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer

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Germanium gate hydrogen-terminated diamond field effect transistor with Al₂O₃ dielectric layer