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Science and Technology of Advanced Materials Volume 9, 2008 - Issue 4
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Focus Papers

Superconductivity in carrier-doped silicon carbide

Takahiro MuranakaDepartment of Physics and Mathematics, Aoyama-Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa229-8558, JapanCorrespondence[email protected]
,
Yoshitake KikuchiDepartment of Physics and Mathematics, Aoyama-Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa229-8558, Japan
,
Taku YoshizawaDepartment of Physics and Mathematics, Aoyama-Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa229-8558, Japan
,
Naoki ShirakawaNational Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8578, Japan
&
Jun AkimitsuDepartment of Physics and Mathematics, Aoyama-Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa229-8558, Japan
Article: 044204 | Received 08 Dec 2008, Accepted 12 Dec 2008, Published online: 28 Jan 2009

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Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu & Yoshiteru Maeno. (2008) Superconductivity in heavily boron-doped silicon carbide. Science and Technology of Advanced Materials 9:4.
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Youichi Yanase & Naoyuki Yorozu. (2008) Superconductivity in compensated and uncompensated semiconductors. Science and Technology of Advanced Materials 9:4.
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