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Articles

AN IMPROVED NONLINEAR CURRENT MODEL FOR GAN HEMT HIGH POWER AMPLIFIER WITH LARGE GATE PERIPHERY

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Pages 284-293 | Published online: 16 Apr 2012

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X.-H. Yuan, Q.-Y. Feng & L.-C. Zhou. (2013) RF power amplifiers behavioral modeling based on extended neural network with additional dynamic fuzzy weights. Journal of Electromagnetic Waves and Applications 27:13, pages 1694-1701.
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Articles from other publishers (6)

Sanjib Kalita, Avrajyoti Dutta & Subhadeep Mukhopadhyay. (2021) Comparative studies on the DC and RF performances of conventional HEMT and double quantum well heterostructure. Optical and Quantum Electronics 53:2.
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Niketa Sharma, Yogendra Gupta, Ashish Sharma & Harish Sharma. 2021. Communication and Intelligent Systems. Communication and Intelligent Systems 13 20 .
Ahmed Abubakr, Ahmad Hassan, Ahmed Ragab, Soumaya Yacout, Yvon Savaria & Mohamad Sawan. (2018) High-Temperature Modeling of the I-V Characteristics of GaN150 HEMT Using Machine Learning Techniques. High-Temperature Modeling of the I-V Characteristics of GaN150 HEMT Using Machine Learning Techniques.
Ya-Ju Lee, Yung-Chi Yao, Chun-Ying Huang, Tai-Yuan Lin, Li-Lien Cheng, Ching-Yun Liu, Mei-Tan Wang & Jung-Min Hwang. (2014) High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers. Nanoscale Research Letters 9:1.
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Tiwat Pongthavornkamol, Lei Pang, Ting-Ting Yuan & Xin-Yu Liu. (2014) Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain—source current correction method. Chinese Physics B 23:12, pages 127304.
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Eswaran Uthirajoo, Harikrishnan Ramiah, Jeevan Kanesan & Ahmed Wasif Reza. (2014) Wideband LTE Power Amplifier with Integrated Novel Analog Pre-Distorter Linearizer for Mobile Wireless Communications. PLoS ONE 9:7, pages e101862.
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