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Articles

Predictability of plastic relaxation in metamorphicepitaxy

Pages 181-186 | Published online: 19 Jul 2013

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D. J. Dunstan. (2016) Validation of a phenomenological strain-gradient plasticity theory. Philosophical Magazine Letters 96:8, pages 305-312.
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D.J. Dunstan. (1996) Mathematical model for strain relaxation in multilayer metamorphic epitaxial structures. Philosophical Magazine A 73:5, pages 1323-1332.
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Articles from other publishers (16)

A. N. Aleshin, A. S. Bugaev, O. A. Ruban, V. V. Saraikin, N. Yu. Tabachkova & I. V. Shchetinin. (2019) Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate. Semiconductors 53:8, pages 1066-1074.
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Y. Li, A. J. Bushby & D. J. Dunstan. (2016) The Hall–Petch effect as a manifestation of the general size effect. Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 472:2190, pages 20150890.
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D.J. Dunstan & A.J. Bushby. (2014) Grain size dependence of the strength of metals: The Hall–Petch effect does not scale as the inverse square root of grain size. International Journal of Plasticity 53, pages 56-65.
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D.J. Dunstan & A.J. Bushby. (2013) The scaling exponent in the size effect of small scale plastic deformation. International Journal of Plasticity 40, pages 152-162.
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C.L. Zhang, B. Xu, Z.G. Wang, P. Jin & F.A. Zhao. (2005) Development of cross-hatch grid morphology and its effect on ordering growth of quantum dots. Physica E: Low-dimensional Systems and Nanostructures 25:4, pages 592-596.
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C.L. Zhang, Z.G. Wang, F.A. Zhao, B. Xu & P. Jin. (2004) Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer. Journal of Crystal Growth 265:1-2, pages 60-64.
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D.J. Dunstan & A.J. Bushby. (2011) Geometrical Contribution to Yield Strength in Small Volumes. MRS Proceedings 778.
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M. U. González, Y. González & L. González. (2002) Study of the relaxation process during InGaAs/GaAs (001) growth from in situ real-time stress measurements . Applied Physics Letters 81:22, pages 4162-4164.
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M.U González, Y González & L González. (2002) In situ detection of an initial elastic relaxation stage during growth of In0.2Ga0.8As on GaAs(0 0 1). Applied Surface Science 188:1-2, pages 128-133.
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M. U. González, Y. González, L. González, M. Calleja & J. A. Sánchez-Gil. (2001) In situ laser light scattering studies on the influence of kinetics on surface morphology during growth of In0.2Ga0.8As/GaAs . Journal of Applied Physics 89:5, pages 2665-2670.
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H.G. Colson, P. Kidd & D.J. Dunstan. (1997) Critical thickness and relaxation of (111) oriented strained epitaxial layers. Microelectronics Journal 28:8-10, pages 785-794.
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M. E. Brenchley, M. Hopkinson, A. Kelly, P. Kidd & D. J. Dunstan. (1997) Coherency Strain as an Athermal Strengthening Mechanism. Physical Review Letters 78:20, pages 3912-3914.
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D. T. Neilson, L. C. Wilkinson, D. J. Goodwill, A. C. Walker, B. Vögele, M. McElhinney, F. Pottier & C. R. Stanley. (1997) Effects of lattice mismatch due to partially relaxed buffer layers in InGaAs/AlGaAs strain balanced quantum well modulators. Applied Physics Letters 70:15, pages 2031-2033.
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P. Kidd & P. F. Fewster. (2011) High Resolution X-Ray Reciprocal Space Mapping of Wavy Layers. MRS Proceedings 472.
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L. González, Y. González, G. Aragón, M. J. Castro, M. L. Dotor & D. J. Dunstan. (1996) Relaxation behavior of undoped In x Ga1− x P 0.5< x <0.7 grown on GaAs by atomic layer molecular-beam epitaxy . Journal of Applied Physics 80:6, pages 3327-3332.
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M. E. Brenchley, D. J. Dunstan, P. Kidd & A. Kelly. (2011) Coherency Strain and High Strength at High Temperature. MRS Proceedings 434.
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