Analysis of Displacement Damage Dose and Low Annealing Temperatures on the I-V Characteristics of SiC Schottky Diodes Using ANOVA Method

Behrooz KhorsandiArizona State University, School of Electrical, Computer and Energy Engineering 650 East Tyler Mall, Tempe, Arizona 85287

Jonathan KulisekThe Ohio State University, Nuclear Engineering Program, 201 West 19th Avenue Columbus, Ohio 43210

Thomas E. BlueThe Ohio State University, Nuclear Engineering Program, 201 West 19th Avenue Columbus, Ohio 43210

Don MillerThe Ohio State University, Nuclear Engineering Program, 201 West 19th Avenue Columbus, Ohio 43210

Jon BaeslackRensselaer Polytechnic Institute, Department of Mechanical, Aerospace, and Nuclear Engineering, 110 8th Street, Troy, New York 12180

Steve StoneLockheed Martin Space Systems Company, 100 Campus Drive, Newtown, Pennsylvania 18940

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Analysis of Displacement Damage Dose and Low Annealing Temperatures on the I-V Characteristics of SiC Schottky Diodes Using ANOVA Method

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Analysis of Displacement Damage Dose and Low Annealing Temperatures on the I-V Characteristics of SiC Schottky Diodes Using ANOVA Method

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