Analytical modelling and electrical characterisation of ZnO based HEMTs

ABSTRACT

Conventionally, Poisson’s equation coupled with 1-D Schrödinger’s equation is solved self-consistently in the triangular quantum well to calculate 2DEG density at the heterointerface. 2DEG density hence derived is a complicated transcendental function which cannot be solved analytically. Therefore, in this work, we use a simple expression for Fermi energy level to develop a compact physics-based 2D-analytical model for 2DEG density. The calculated 2DEG density from this model is validated with earlier reported experimental results. Using this 2DEG density, an expression for I-V characteristics of HEMTs has also been developed. The I-V characteristics of a buffer layer engineered MgZnO/CdZnO HEMT for improved 2DEG density have been analysed for the first time using developed model to the best of our knowledge.

KEYWORDS:

• 2DEG density
• triangular potential well
• buffer layer engineering
• ZnO
• CdZnO

Disclosure statement

No potential conflict of interest was reported by the authors.