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Abstract
Design of a compact 2.4 GHz class-F power amplifier (PA) with high power-added efficiency (PAE) using a novel harmonic control circuit (HCC) is reported. The main aims of the proposed PA are to obtain compact size and high PAE. The proposed HCC consists of an input matching circuit, a lampshade compact microstrip resonant cell (LCMRC) and output matching network (OMN). The HCC input matching circuit is employed to reduce the capacitive and inductive effects of the transistor. A part of the input matching circuit is replaced with a LCMRC to have more suppression at the third harmonic (7.2 GHz). The HCC OMN consists of two transmission lines for matching fundamental harmonic. The optimum values of the circuit parameters are obtained by harmonic balanced analysis at a drain voltage of 3 volts. The measured values of PAE and output power at 2.4 GHz are 83% and 23.65 dBm, respectively under 10 dBm input power. Furthermore, the fabricated amplifier occupies an area of 45 × 35 mm2 only.
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Notes on contributors
M. Hayati
Mohsen Hayati received the BE degree in electronics and communication engineering from Nagarjuna University, Andhra Pradesh, India, in 1985, and the ME and PhD degrees in electronics engineering from Delhi University, Delhi, India, in 1987 and 1992, respectively. He joined the Electrical Engineering Department, Razi University, Kermanshah, Iran, as an assistant professor in 1993. Currently, he is a professor with the Electrical Engineering Department, Razi University, Kermanshah, Iran. He has published more than 200 papers in international, domestic journals, and conferences. His current research interests include microwave and millimeter wave devices and circuits, application of computational intelligence, artificial neural networks, fuzzy systems, neuro-fuzzy systems, electronic circuit synthesis, modeling and simulations. Corresponding author. Email: [email protected]
S. Zarghami
Sepehr Zarghami received the BE in electronics engineering from the Electrical Engineering Department, Kermanshah Branch, Islamic Azad University, Iran in 2013 and ME from the Electrical Engineering Department, Razi University, Kermanshah, Iran; in 2016. He is currently a PhD candidate in Electrical Department at Razi University, Kermanshah, since 2017. His research interests include microwave engineering, power amplifiers design, Low noise amplifier design, and analog passive circuits design. Email: [email protected]
A. Grebennikov
Andrei Grebennikov (M’99–SM’04) received the Dipl Ing degree in radio electronics from Moscow Institute of Physics and Technology, Moscow, Russia, in 1980 and the PhD degree in radio engineering from Moscow Technical University of Communications and Informatics, Moscow, in 1991. He obtained long-term academic and industrial experience working with Moscow Technical University of Communications and Informatics, Moscow; Institute of Microelectronics (Singapore); M/A-COM (Ireland); Infineon Technologies (Germany/Austria); and Bell Labs, Alcatel-Lucent (Ireland) as an engineer, a researcher, a lecturer, and an educator. He has read lectures as a guest professor at the University Linz, Linz, Austria, and presented short courses and tutorials as an invited speaker at the IEEE MTT-S International Microwave Symposium; European and Asia-Pacific Microwave Conferences; Institute of Microelectronics, Singapore; Motorola Design Centre, Malaysia; Tomsk State University of Control Systems and Radioelectronics, Tomsk, Russia; and Aachen Technical University, Aachen, Germany. He is currently principal, RF Systems Architect with Microsemi, Aliso Viejo, CA, USA. He has authored or co-authored over 100 papers and seven books dedicated to radio frequency and microwave circuit design. He is the holder of 25 European and US patents. Email: [email protected]