Effects of Total Dose Radiation on Single Event Effect of the Uniaxial Strained Si Nano NMOSFET

Abstract

The effect of total dose radiation on the single event effect of uniaxial strained Si Nano channel metal oxide semiconductor field effect transistor (NMOSFET) was studied by TCAD simulation. By comparing the experimental results, the TCAD simulation model of the 50 nm strained Si NMOS device is established. The model is used to simulate the off-state single event effect (V_ds = 0.05) of NMOSFET under the total dose radiation. The results show that total dose radiation increases the body potential of NMOSFET devices and intensifies the single event transient process of NMOSFET devices. The transient current increases by 4.88% and the drain charge increases by 29.15% under the total dose of 2KGy, which indicates that the effect of total dose radiation on the single event effect is the main factor affecting the collection of drain charge. Therefore, the experimental results and the established model provide good reference for the study of irradiation reliability of the uniaxial strained Si Nano NMOSFET and the application of strained integrated circuits.

KEYWORDS:

• Strained Si
• NMOSFET device
• Total dose radiation
• Single event effect

ACKNOWLEDGEMENTS

This work was supported by the National Natural Science Foundation of China (Grant No. 61805197) and the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (Grant No. 90109162905).

Additional information

Funding

This work was supported by National Natural Science Foundation of China [grant number 61805197]; the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences [grant number 90109162905].

Notes on contributors

Minru Hao

Minru Hao received the PhD degree in microelectronics and solid state electronics from the Xi’dian University, China. Her current research interests include radiation characteristics and reinforcement technology of strained Si MOS devices.

Yan Zhang

Yan Zhang was born in Shaanxi, China, in 1981. She received the PhD degree in School of Physics and Optoelectronic Engineering from the Xi’dian University, China. The main research directions are optical communication, quantum communication, nonlinear optics and device reliability. Email: [email protected]

Min Shao

Min Shao was born in Shaanxi, China, in 1979. She received the PhD degree in optics engineering from Northwestern Polytechnical University, Xi’an, China in 2014. She joined Xi’an Shiyou University, China, in 2004. Now, she is an associate professor of Xi’an Shiyou University. Her current research interest is in the optical fiber sensing theory and technology. Email: [email protected]

Guoxiang Chen

Guoxiang Chen was born in March 1979, doctor, professor, master's supervisor. His current research interests include doping modification of low-dimensional materials, magnetic mechanism and photoelectric properties of semiconductor functional materials. Email: [email protected]

Bin Wang

Bin Wang was born in Shaanxi Province, China, in 1983. He received the BS degree in electron science and technology, and MS degree in microelectronic engineering from XiDian University, Xi’an, China, in 2006 and 2010, respectively, and the PhD degree in microelectronics science and technology from Xidian, in 2014. His research topic focused on the high-performance FET design, including low power nano MOSFE reliability research and TFET devices. Email: [email protected]