A Comparative Analysis of Cavity Positions in Charge Plasma based Tunnel FET for Biosensor Application

Abstract

This work reports a comparative analysis of different cavity positions in Charge Plasma-based Tunnel Field Effect Transistor (CP TFET) for Biosensor Application. In CP TFET, we have created a nanogap cavity at three different positions i.e. the Source, Gate, and Drain. The nanogap cavity formed at Source, Gate, and Drain is called Source Cavity, Gate Cavity, and Drain Cavity, respectively. The intrinsic properties of biomolecules, such as dielectric constant (K) and charge density (o̧), have been utilized to detect the biomolecules in the cavity. The source and drain region are formed by appropriate metal work functions using the charge plasma concept. The presence of biomolecules in the cavity increases the effective capacitance of the device. As a result, a high electric field generates under the cavity region. Consequently, due to large band bending, thinning of tunneling width occurred. Therefore, the increase in tunneling rate enhances the drive current of the device. The device physics has been analyzed using energy band variation, surface potential, electron tunneling rate, electric field, and transfer characteristics for different biomolecules. In addition, the Sensitivity of the device at different cavity positions has been investigated and compared in terms of I_ON, I_ON/I_OFF, V_th, and SS. Furthermore, the sensitivity of the proposed device is compared with the existing literature and the possible fabrication process flow of the device has also been presented in this work.

KEYWORDS:

• Biosensor
• Charge density
• Charge plasma
• Dielectric constant
• Nanogap cavity
• Sensitivity

AUTHORS’ CONTRIBUTIONS

All the authors have contributed equally.

DISCLOSURE STATEMENT

No potential conflict of interest was reported by the author(s).

ETHICS DECLARATIONS

The authors declare that they have no known competing interests or personal relationships that could have appeared to influence the work reported in this paper.

Additional information

Funding

The work is supported by the Science and Engineering Research Board, Department of Science and Technology, Government of India under Grant Number EEQ/2021/000831.

Notes on contributors

Anil Kumar

Anil Kumar received the BTech degree in electronics and communication engineering from Dr APJ AKTU, UP, India, and MTech degree in microelectronics & VLSI design from MNNIT Prayagraj, India. He is working towards PhD degree in the Department of Electronics and Communication Engineering, Delhi Technological University, Delhi, India. His research interests include nanoscale device simulation and modeling. E-mail: [email protected].

Sumit Kale

Sumit Kale received PhD degree from the PDPM Indian Institute of Information Technology, Design, and Manufacturing, Jabalpur, India, in 2017. He is currently working as an assistant professor in the Department of Electronics and Communication Engineering, DTU Delhi. His current research interests include the design, simulation, and modeling of high-performance nanoscale devices for analog/RF, mixed signal, and biosensor applications. Corresponding author. Email: [email protected].