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Radiation Effects and Defects in Solids
Incorporating Plasma Science and Plasma Technology
Volume 174, 2019 - Issue 7-8
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Articles

Comprehensive study on hot carrier reliability of radiation hardened H-gate PD SOI NMOSFET after gamma radiation

Jinghao ZhaoThe Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China;Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, China;The University of Chinese Academy of Sciences, Beijing, ChinaORCID Iconhttps://orcid.org/0000-0001-9631-8168View further author information
ORCID Icon,
Hang ZhouThe Microsystem and Terahertz Research Center & Institute of Electronic Engineering, China Academic of Engineering Physics, Mianyang, ChinaView further author information
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Jiangwei CuiThe Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China;Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, ChinaView further author information
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Qiwen ZhengThe Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China;Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, ChinaView further author information
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Ying WeiThe Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China;Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, ChinaView further author information
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Shanxue XiThe Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China;Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, China;The University of Chinese Academy of Sciences, Beijing, ChinaView further author information
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Xuefeng YuThe Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China;Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, ChinaCorrespondence[email protected]
View further author information
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Qi GuoThe Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China;Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, ChinaView further author information
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Pages 606-616 | Received 26 Jul 2018, Accepted 13 May 2019, Published online: 23 Jun 2019
 
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ABSTRACT

The authors perform gamma ray irradiation and hot carrier stress on RH H-Gate PD (partially depleted) SOI NMOSFETs as the experimental group and commercial strip-shaped gate PD SOI NMOSFETs as the control group. They analyse HCI degradation in samples and conclude that radiation could enhance HCI degradation in RH H-gate samples. Moreover, the mechanism is explained as the coupling effect between the front gate and back gate caused by TID radiation-induced trap charges in the buried oxide.

Acknowledgement

The authors would like to thank Dr. Xiaochen Rui of the University of Hong Kong for his support of this work.

Disclosure statement

No potential conflict of interest was reported by the authors.

Additional information

Funding

This work was supported by West Light Foundation of the Chinese Academy of Sciences [grant number 2015-XBQN-B-15]; National Natural Science Foundation of China [grant number 11475255, 11505282].

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