Prediction of single event upset critical charge and sensitive volume depth by energy deposition analysis of low energy protons

Abstract

Single Event Upset (SEU) critical charge and sensitive volume depth of 65-nm CMOS bulk SRAM are predicted through energy deposition analysis of low energy protons. The deposited energy distributions of protons calculated by GEANT4 are incorporated into the three-dimensional device simulator to perform the Single Event Effects (SEE) simulation. Based on the analysis of the relationship between the energy deposition distributions and the single event responses, the deposited energy is correlated with the SEU critical charge, and valuable information of the upset sensitive volume depth is provided. Our prediction method is validated by the results of SPICE simulation method as well as experimental data.

KEYWORDS:

• Single event upset
• low energy proton
• critical charge
• energy deposition
• sensitive volume depth

Disclosure statement

No potential conflict of interest was reported by the author(s).

Additional information

Funding

This work was supported by Major Program of National Natural Science Foundation of China (grant number11690043).