Advanced search
Publication Cover
Integrated Ferroelectrics
An International Journal
Volume 219, 2021 - Issue 1: Proceedings of the Nineteenth China International Nanoscience and Technology Symposium (CINSTS20), Part V of V
Submit an article Journal homepage
151
Views
0
CrossRef citations to date
0
Altmetric
Research Article

Enhanced Band Edge Luminescence in GaAs with Sulfur Passivation

Xuan Fanga State Key Laboratory of High Power Semiconductor Lasers, International Joint Research Center for Nanophotonics and Biophotonics, School of Science, Changchun University of Science and Technology, Changchun, P. R. China;b School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong, P.R. China;e Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, P.R. ChinaView further author information
,
Lijuan Yaoa State Key Laboratory of High Power Semiconductor Lasers, International Joint Research Center for Nanophotonics and Biophotonics, School of Science, Changchun University of Science and Technology, Changchun, P. R. ChinaView further author information
,
Dan Fanga State Key Laboratory of High Power Semiconductor Lasers, International Joint Research Center for Nanophotonics and Biophotonics, School of Science, Changchun University of Science and Technology, Changchun, P. R. ChinaCorrespondence[email protected]
View further author information
,
Hongbin Zhaod State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing, P. R. ChinaCorrespondence[email protected]
View further author information
,
Zhen Guoc CAS Key Lab of Bio-Medical Diagnostics, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences, Suzhou, P.R. ChinaView further author information
,
Haixi Zhangb School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong, P.R. ChinaView further author information
,
Ning Xiaa State Key Laboratory of High Power Semiconductor Lasers, International Joint Research Center for Nanophotonics and Biophotonics, School of Science, Changchun University of Science and Technology, Changchun, P. R. ChinaView further author information
,
Dengkui Wanga State Key Laboratory of High Power Semiconductor Lasers, International Joint Research Center for Nanophotonics and Biophotonics, School of Science, Changchun University of Science and Technology, Changchun, P. R. ChinaView further author information
,
Jinhua Lia State Key Laboratory of High Power Semiconductor Lasers, International Joint Research Center for Nanophotonics and Biophotonics, School of Science, Changchun University of Science and Technology, Changchun, P. R. ChinaView further author information
,
Xiaohua Wanga State Key Laboratory of High Power Semiconductor Lasers, International Joint Research Center for Nanophotonics and Biophotonics, School of Science, Changchun University of Science and Technology, Changchun, P. R. ChinaView further author information
&
Zhipeng Weia State Key Laboratory of High Power Semiconductor Lasers, International Joint Research Center for Nanophotonics and Biophotonics, School of Science, Changchun University of Science and Technology, Changchun, P. R. ChinaView further author information
 show all
Pages 47-54 | Received 12 Oct 2020, Accepted 15 Feb 2021, Published online: 23 Sep 2021
 
Sample our Physical Sciences journals, sign in here to start your FREE access for 14 days

Abstract

In this work, we perform a sulfur chemical passivation on GaAs substrate, which leads to a change in the photoluminescence (PL) owing to a reduction of surface states. By varying the reaction time of passivation, we can modify the chemical bonds of the GaAs surface and reduce the surface depletion region thickness, which strongly affects the emission efficiency of the GaAs band edge. Based on systematic PL measurements and energy band model with surface states, the sulfur passivation also enhances the number of free and bound excitons. Therefore, sulfur passivation is important to improve the performance of GaAs-based optoelectronics devices.

Additional information

Funding

This work was supported by the National Natural Science Foundation of China (62074018, 61704011), the China Postdoctoral Science Foundation funded project (2019M652176, 2019M661680), the Foundation of the State Key Laboratory of High Power Semiconductor Lasers, the Developing Project of Science and Technology of Jilin Province (20200301052RQ, 20180519017JH, 20180520177JH) and the Shenzhen Fundamental Research Fund (JCYJ20180307151538972), the Natural Science Foundation of Guangdong Province (2020A1515010868).

Log in via your institution

Access through your institution

Log in to Taylor & Francis Online

Restore content access

Restore content access for purchases made as guest
Purchase options * Save for later

PDF download + Online access

  • 48 hours access to article PDF & online version
  • Article PDF can be downloaded
  • Article PDF can be printed
USD 61.00 Add to cart

Issue Purchase

  • 30 days online access to complete issue
  • Article PDFs can be downloaded
  • Article PDFs can be printed
USD 2,157.00 Add to cart

* Local tax will be added as applicable

Related Research

People also read lists articles that other readers of this article have read.

Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.

Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.