High Power 980-nm Broad-Area Lasers with Distributed Bragg Reflection Grating

Abstract

High-power and highly stable 980 nm semiconductor lasers are widely used in fiber laser pumping and instrumentation applications. We report on a distributed Bragg reflector (DBR) semiconductor laser manufactured on the waveguide structure of an asymmetric large optical cavity. Wavelength stabilization is achieved using a 500-µm-long DBR with a sixth-order Bragg grating, which is fabricated using a combination of electron beam lithography and inductively coupled plasma etching. When the device injection current is 22 A, the output power ranges up to 16 W, the slope efficiency is 0.73 W/A, and a spectral linewidth of 1.4 nm is achieved.

Keywords:

• Semiconductor lasers
• distributed Bragg reflector
• electron beam lithography
• high power

Acknowledgments

The authors thank Chen Chen for performing electron beam lithography. This work was supported by equipment provided by Nano Fabrication Facility, Suzhou.

Additional information

Funding

This work was supported by the National Natural Science Foundation of China (61574022, 61674021, 11674038, 61704011), the China Postdoctoral Science Foundation funded project (2019M652176, 2019M661680), the Foundation of the State Key Laboratory of High Power Semiconductor Lasers, the Developing Project of Science and Technology of Jilin Province (20200301052RQ, 20180519017JH, 20180520177JH) and the Shenzhen Fundamental Research Fund (JCYJ20180307151538972), and Guangdong Basic and Applied Basic Research Foundation (2020A1515010868), Open Project Program of Key Laboratory for Photonic and Electric Bandgap Materials, Ministry of Education, Harbin Normal University, China (PEBM201902).